NZT651 [ONSEMI]
NPN 电流驱动器晶体管;
| 型号： | NZT651 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 电流驱动器晶体管 驱动 晶体管 驱动器 |
| 文件： | 总7页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2014
NZT651
NPN Current Driver Transistor
4
Description
This device is designed for power amplifier, regulator
and switching circuits where speed is important.
Sourced from process 4P.
3
2
1
SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
NZT651
651
SOT-223 4L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
60
80
V
5.0
V
Collector Current - Continuous
4.0
A
TJ, TSTG Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
-55 to +150
°C
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
NZT651 Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
1.2
Unit
W
Total Power Dissipation
Derate Above 25°C
9.7
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
103
Note:
3. Device is mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
60
Max.
Unit
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 100 μA, IE = 0
80
V
IE = 100 μA, IC = 0
5.0
V
ICBO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCB = 80 V, IE = 0
100
0.1
nA
μA
VEB = 4.0 V, IC = 0
IC = 50 mA, VCE = 2.0 V
IC = 500 mA, VCE = 2.0 V
IC = 1.0 A, VCE = 2.0 V
IC = 2.0 A, VCE = 2.0 V
IC = 1.0 A, IB = 100 mA
IC = 2.0 A, IB = 200 mA
IC = 1.0 A, IB = 100 mA
IC = 1.0 A, VCE = 2.0 V
75
75
75
40
hFE
DC Current Gain(4)
0.3
0.5
1.2
1.0
Collector-Emitter Saturation
Voltage(4)
VCE(sat)
V
VBE(sat) Base-Emitter Saturation Voltage(4)
V
V
VBE(on)
Base-Emitter On Voltage(4)
IC = 50 mA, VCE = 5.0 V,
f = 100 MHz
fT
Current Gain - Bandwidth Product
75
MHz
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 1997 Fairchild Semiconductor Corporation
NZT651 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
3
2.5
2
200
β
= 10
VCE= 5V
125 °C
150
1.5
1
100
25 °C
25 °C
50
- 40 ºC
- 40 ºC
0.5
125 °C
0
0
0.01
0.1
1
10
0.01
0.1
1
10
I
C - COLLECTOR CURRENT (A)
I
C - COLLECTOR CURRENT (A)
Figure 1. Typical Pulsed Current Gain
vs. Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs. Collector Current
1.4
1.2
1
- 40 ºC
0.8
1
25 °C
- 40 ºC
0.8
0.6
0.4
0.2
125 °C
25 °C
125 °C
0.6
0.4
VCE = 5V
β
= 10
0.2
0.01
0.1
1
10
0.1
1
10
I C - COLLECTOR CURRENT (A)
I C - COLLECTOR CURRENT (A)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base-Emitter On Voltage
vs. Collector Current
100
VCB = 50V
10
1
0.1
0.01
25
50
75
100
125
150
TA - AMBIENT TEMPERATURE (ºC)
Figure 6. Junction Capacitance vs.
Reverse Bias Voltage
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
NZT651 Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
1.2
1
SOT-223
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TEMPERATURE ( oC)
Figure 7. Power Dissipation vs.
Ambient Temperature
© 1997 Fairchild Semiconductor Corporation
NZT651 Rev. 1.1.0
www.fairchildsemi.com
4
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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