MOC3162V-M [FAIRCHILD]

1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, DIP-6;
MOC3162V-M
型号: MOC3162V-M
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

1 CHANNEL TRIAC OUTPUT WITH ZERO CRSVR OPTOCOUPLER, DIP-6

三端双向交流开关 输出元件 光电
文件: 总11页 (文件大小:296K)
中文:  中文翻译
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September 2010  
MOC3061M, MOC3062M, MOC3063M,  
MOC3162M, MOC3163M  
6-Pin DIP Zero-Cross Phototriac Driver Optocoupler  
(600 Volt Peak)  
Features  
Description  
Simplifies logic control of 115/240 VAC power  
Zero voltage crossing  
The MOC306XM and MOC316XM devices consist of a  
GaAs infrared emitting diode optically coupled to a  
monolithic silicon detector performing the function of a  
zero voltage crossing bilateral triac driver. They are  
designed for use with a triac in the interface of logic sys-  
tems to equipment powered from 115/240 VAC lines,  
such as solid-state relays, industrial controls, motors,  
solenoids and consumer appliances, etc.  
dv/dt of 1000V/µs guaranteed (MOC316X-M),  
– 600V/µs guaranteed (MOC306X-M)  
VDE recognized (File # 94766)  
– ordering option V (e.g., MOC3063V-M)  
Underwriters Laboratories (UL) recognized  
(File #E90700, volume 2)  
Applications  
Solenoid/valve controls  
Static power switches  
Temperature controls  
AC motor starters  
Lighting controls  
AC motor drives  
E.M. contactors  
Solid state relays  
Schematic  
Package Outlines  
ANODE 1  
6 MAIN TERM.  
CATHODE  
N/C  
NC*  
2
3
5
4
ZERO  
CROSSING  
CIRCUIT  
MAIN TERM.  
*DO NOT CONNECT  
(TRIAC SUBSTRATE)  
©2005 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
MOC306XM, MOC316XM Rev. 1.0.4  
Absolute Maximum Ratings (T = 25°C unless otherwise noted)  
A
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be  
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.  
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.  
The absolute maximum ratings are stress ratings only.  
Symbol  
Parameters  
Device  
Value  
Units  
TOTAL DEVICE  
T
Storage Temperature  
All  
All  
All  
All  
All  
-40 to +150  
-40 to +85  
260 for 10 sec  
-40 to +100  
7500  
°C  
°C  
STG  
T
Operating Temperature  
OPR  
T
Lead Solder Temperature  
Junction Temperature Range  
°C  
SOL  
T
°C  
J
(1)  
V
Isolation Surge Voltage  
Vac(pk)  
ISO  
(peak AC voltage, 60Hz, 1 sec. duration)  
Total Device Power Dissipation @ 25°C Ambient  
Derate above 25°C  
P
All  
250  
mW  
D
2.94  
mW/°C  
EMITTER  
I
Continuous Forward Current  
Reverse Voltage  
All  
All  
All  
60  
6
mA  
V
F
V
P
R
D
Total Power Dissipation @ 25°C Ambient  
Derate above 25°C  
120  
1.41  
mW  
mW/°C  
DETECTOR  
V
Off-State Output Terminal Voltage  
All  
All  
600  
1
V
A
DRM  
TSM  
I
Peak Repetitive Surge Current  
(PW = 100µs, 120pps)  
P
Total Power Dissipation @ 25°C Ambient  
Derate above 25°C  
All  
150  
mW  
D
1.76  
mW/°C  
Note:  
1. Isolation surge voltage, V , is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are  
ISO  
common, and Pins 4, 5 and 6 are common.  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
2
Electrical Characteristics (T = 25°C Unless otherwise specified)  
A
Individual Component Characteristics  
Symbol  
EMITTER  
Parameters  
Test Conditions  
Device  
Min. Typ.* Max. Units  
V
Input Forward Voltage  
I = 30mA  
All  
All  
1.3  
1.5  
V
F
F
I
Reverse Leakage Current  
V = 6V  
0.005  
100  
µA  
R
R
DETECTOR  
(2)  
I
Peak Blocking Current,  
Either Direction  
V
= 600V, I = 0  
MOC316XM  
MOC306XM  
MOC306XM  
10  
10  
100  
500  
DRM1  
DRM  
F
nA  
(3)  
dv/dt  
Critical Rate of Rise of  
Off-State Voltage  
I = 0 (Figure 9)  
600  
1500  
F
V/µs  
MOC316XM 1000  
Transfer Characteristics  
Symbol DC Characteristics  
Test Conditions  
Device  
Min. Typ.* Max. Units  
I
LED Trigger Current  
(rated I  
Main Terminal  
Voltage = 3V  
MOC3061M  
15  
10  
mA  
FT  
(3)  
)
FT  
MOC3062M/  
MOC3162M  
MOC3063M/  
MOC3163M  
5
3
V
Peak On-State Voltage,  
Either Direction  
I
= 100 mA peak,  
All  
1.8  
V
TM  
TM  
I = rated I  
F
FT  
I
Holding Current,  
Either Direction  
All  
500  
µA  
H
Zero Crossing Characteristics  
Symbol  
Characteristics  
Test Conditions  
Device  
Min. Typ.* Max. Units  
V
Inhibit Voltage (MT1-MT2  
voltage above which device  
will not trigger)  
I = Rated I  
FT  
MOC3061M/2M/3M  
MOC3162M/3M  
12  
12  
20  
15  
V
INH  
F
I
Leakage in Inhibited State I = Rated I ,  
Al  
2
mA  
DRM2  
F
FT  
V
= 600V,  
DRM  
off state  
Isolation Characteristics  
Symbol  
Characteristics  
Test Conditions  
Device  
Min.  
Typ.*  
Max.  
Units  
V
Isolation Voltage  
f = 60 Hz, t = 1 sec  
All  
7500  
V
ISO  
*Typical values at T = 25°C  
A
Notes:  
2. Test voltage must be applied within dv/dt rating.  
3. All devices are guaranteed to trigger at an I value less than or equal to max I . Therefore, recommended operating  
F
FT  
I lies between max I (15mA for MOC3061M, 10mA for MOC3062M & MOC3162M, 5mA for MOC3063M &  
F
FT  
MOC3163M) and absolute max I (60mA).  
F
4. This is static dv/dt. See Figure 9 for test circuit. Commutating dv/dt is a function of the load-driving thyristor(s) only.  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
3
Safety and Insulation Ratings  
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.  
Compliance with the safety ratings shall be ensured by means of protective circuits.  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
Installation Classifications per DIN VDE 0110/1.89  
Table 1  
For Rated Main Voltage < 150Vrms  
For Rated Main voltage < 300Vrms  
Climatic Classification  
I-IV  
I-IV  
55/100/21  
2
Pollution Degree (DIN VDE 0110/1.89)  
Comparative Tracking Index  
CTI  
175  
V
Input to Output Test Voltage, Method b,  
1594  
V
V
PR  
peak  
peak  
V
x 1.875 = V , 100% Production Test  
IORM  
PR  
with tm = 1 sec, Partial Discharge < 5pC  
Input to Output Test Voltage, Method a,  
1275  
V
x 1.5 = V , Type and Sample Test  
PR  
IORM  
with tm = 60 sec, Partial Discharge < 5pC  
Max. Working Insulation Voltage  
Highest Allowable Over Voltage  
External Creepage  
V
850  
6000  
7
V
V
IORM  
peak  
V
IOTM  
peak  
mm  
mm  
mm  
External Clearance  
7
Insulation Thickness  
0.5  
9
RIO  
Insulation Resistance at Ts, V = 500V  
10  
IO  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
4
Typical Performance Curves  
Figure 1. LED Forward Voltage vs. Forward Current  
Figure 2. Trigger Current Vs. Temperature  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
1.7  
1.6  
1.5  
1.4  
1.3  
V
= 3V  
TM  
NORMALIZED TO T = 25°C  
A
T
= -40°C  
= 25°C  
A
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
T
A
A
T
= 85°C  
0.1  
1
10  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
I , LED FORWARD CURRENT (mA)  
F
T , AMBIENT TEMPERATURE (°C)  
A
Figure 3. LED Current Required to Trigger vs.  
LED Pulse Width  
Figure 4. Leakage Current, I  
vs. Temperature  
DRM  
16  
14  
12  
10  
8
10000  
1000  
100  
10  
T
= 25°C  
A
NORMALIZED TO PW >> 100µs  
IN  
6
4
1
2
0.1  
-40  
0
-20  
0
20  
40  
60  
80  
100  
1
10  
100  
T , AMBIENT TEMPERATURE (°C)  
A
PW , LED TRIGGER PULSE WIDTH (µs)  
IN  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
5
Typical Performance Curves (Continued)  
Figure 5. I  
, Leakage in Inhibit State vs. Temperature  
DRM2  
Figure 6. On-State Characteristics  
2.4  
800  
600  
400  
200  
0
I
= RATED I  
FT  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
F
NORMALIZED TO T = 25°C  
A
T
= 25°C  
A
-200  
-400  
-600  
-800  
0.4  
-40  
-20  
0
20  
40  
60  
80  
100  
-4  
-3  
-2  
-1  
0
1
2
3
4
T , AMBIENT TEMPERATURE (°C)  
A
V
, ON-STATE VOLTAGE (VOLTS)  
TM  
Figure 7. I , Holding Current vs. Temperature  
Figure 8. Inhibit Voltage vs. Temperature  
H
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
1.20  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
0.80  
NORMALIZED TO T = 25°C  
A
-40  
-20  
0
20  
40  
60  
80  
100  
T , AMBIENT TEMPERATURE (°C)  
A
-40  
-20  
0
20  
40  
60  
80  
100  
T , AMBIENT TEMPERATURE (°C)  
A
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
6
1. 100x scope probes are used, to allow high speeds and voltages.  
2. The worst-case condition for static dv/dt is established by triggering the D.U.T. with a normal LED input current, then  
removing the current. The variable vernier resistor combined with various capacitor combinations allows the dv/dt to  
be gradually increased until the D.U.T. continues to trigger in response to the applied voltage pulse, even after the  
LED current has been removed. The dv/dt is then decreased until the D.U.T. stops triggering. t is measured at this  
RC  
point and recorded.  
27  
V
/V  
SELECT  
2W  
DRM RRM  
2W  
1000  
10 WATT  
WIREWOUND  
6
4
X100 PROBE  
1
DUT  
DIFFERENTIAL  
PREAMP  
20k  
0.33 1000V  
0.047  
1000V  
2
X100 PROBE  
470pF  
dV  
dt  
VERNIER  
MOUNT DUT ON  
TEMPERATURE CONTROLLED  
Cµ PLATE  
0.001  
0.005  
0.01  
100  
2W  
1 MEG  
2W EACH  
1.2 MEG  
82  
2W  
2W  
POWER  
TEST  
0.047  
0.1  
1N914  
RFP4N100  
20V  
0.47  
0-1000V  
10mA  
56  
2W  
1000  
1/4W  
1N967A  
18V  
f = 10 Hz  
PW = 100 µs  
50 PULSE  
GENERATOR  
ALL COMPONENTS ARE NON-INDUCTIVE UNLESS SHOWN  
dV  
dt  
Figure 9. Circuit for Static  
Measurement of Power Thyristors  
Basic Applications  
Typical circuit for use when hot line switching is  
required. In this circuit the “hot” side of the line is  
switched and the load connected to the cold or  
neutral side. The load may be connected to either  
the neutral or hot line.  
Rin  
360Ω  
1
2
6
5
VCC  
HOT  
FKPF12N60  
MOC3061-M  
MOC3062-M  
MOC3063-M  
R
is calculated so that I is equal to the rated I  
F FT  
in  
39Ω  
of the part, 15mA for the MOC3061M, 10mA for  
the MOC3062M, or 5mA for the MOC3063M.  
The 39resistor and 0.01µF capacitor are for  
3
4
240 VAC  
0.01µF  
360Ω  
LOAD  
NEUTRAL  
snubbing of the triac and is often, but not always,  
necessary depending upon the particular triac and  
load used.  
Figure 10. Hot-Line Switching Application Circuit  
Suggested method of firing two, back-to-back  
SCR’s with a Fairchild triac driver. Diodes  
can be 1N4001; resistors, R1 and R2, are  
optional 330.  
115 VAC  
R1  
D1  
1
2
6
5
VCC  
Note:  
Rin  
MOC3061-M  
MOC3062-M  
MOC3063-M  
SCR  
This optoisolator should not be used to drive  
a load directly. It is intended to be a trigger  
device only.  
SCR  
360Ω  
3
4
R2  
D2  
LOAD  
Figure 11. Inverse-Parallel SCR Driver Circuit  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
7
Package Dimensions  
Through Hole  
0.4" Lead Spacing  
8.13–8.89  
6
4
8.13–8.89  
6
4
6.10–6.60  
6.10–6.60  
Pin 1  
1
3
Pin 1  
1
3
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
7.62 (Typ.)  
5.08 (Max.)  
3.28–3.53  
0.25–0.36  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.38 (Min.)  
2.54–3.81  
2.54 (Bsc)  
0.20–0.30  
(0.86)  
15° (Typ.)  
(0.86)  
0.41–0.51  
0.76–1.14  
0.20–0.30  
10.16–10.80  
1.02–1.78  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Surface Mount  
(1.78)  
8.13–8.89  
6
4
(1.52)  
(2.54)  
(7.49)  
6.10–6.60  
8.43–9.90  
(10.54)  
1
3
(0.76)  
Pin 1  
Rcommended Pad Layout  
0.25–0.36  
3.28–3.53  
5.08  
(Max.)  
0.20–0.30  
0.38 (Min.)  
0.16–0.88  
(8.13)  
2.54 (Bsc)  
(0.86)  
0.41–0.51  
0.76–1.14  
1.02–1.78  
Note:  
All dimensions in mm.  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
8
Ordering Information  
Order Entry Identifier  
(Example)  
Option  
Description  
No option  
MOC3061M  
MOC3061SM  
Standard Through Hole Device  
Surface Mount Lead Bend  
Surface Mount; Tape and Reel  
0.4" Lead Spacing  
S
SR2  
T
MOC3061SR2M  
MOC3061TM  
V
MOC3061VM  
VDE 0884  
TV  
MOC3061TVM  
MOC3061SVM  
MOC3061SR2VM  
VDE 0884, 0.4" Lead Spacing  
VDE 0884, Surface Mount  
VDE 0884, Surface Mount, Tape and Reel  
SV  
SR2V  
Marking Information  
1
2
MOC3061  
X YY Q  
6
V
5
3
4
Definitions  
1
2
Fairchild logo  
Device number  
VDE mark (Note: Only appears on parts ordered with VDE  
option – See order entry table)  
3
4
5
6
One digit year code, e.g., ‘3’  
Two digit work week ranging from ‘01’ to ‘53’  
Assembly package code  
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are  
marked with date code ‘325’ or earlier are marked in portrait format.  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
9
Carrier Tape Specification  
12.0 ± 0.1  
2.0 ± 0.05  
4.5 ± 0.20  
Ø1.5 MIN  
1.75 ± 0.10  
4.0 ± 0.1  
0.30 ± 0.05  
11.5 ± 1.0  
24.0 ± 0.3  
9.1 ± 0.20  
21.0 ± 0.1  
Ø1.5 ± 0.1/-0  
10.1 ± 0.20  
0.1 MAX  
User Direction of Feed  
Reflow Profile  
300  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
260°C  
>245°C = 42 Sec  
Time above  
183°C = 90 Sec  
°C  
1.822°C/Sec Ramp up rate  
60  
40  
33 Sec  
20  
0
0
60  
120  
180  
270  
360  
Time (s)  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
10  
TRADEMARKS  
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not  
intended to be an exhaustive list of all such trademarks.  
®
*
AccuPower  
Auto-SPM™  
F-PFS™  
Power-SPM™  
PowerTrench®  
PowerXS™  
FRFET®  
The Power Franchise®  
Build it Now™  
CorePLUS™  
CorePOWER™  
CROSSVOLT™  
CTL™  
Global Power ResourceSM  
Green FPS™  
Green FPSe-Series™  
Gmax™  
GTO™  
IntelliMAX™  
ISOPLANAR™  
MegaBuck™  
MICROCOUPLER™  
MicroFET™  
Programmable Active Droop™  
QFET®  
QS™  
TinyBoost™  
TinyBuck™  
Quiet Series™  
RapidConfigure™  
TinyCalc™  
Current Transfer Logic™  
DEUXPEED®  
Dual Cool™  
TinyLogic®  
TINYOPTO™  
TinyPower™  
TinyPWM™  
TinyWire™  
TriFault Detect™  
TRUECURRENT*  
" SerDes™  
Saving our world, 1mW/W/kW at a time™  
SignalWise™  
SmartMax™  
EcoSPARK®  
n
EfficientMax™  
ESBC™  
MicroPak™  
SMART START™  
®
SPM®  
MicroPak2™  
MillerDrive™  
MotionMax™  
Motion-SPM™  
OptoHiT™  
Fairchild®  
STEALTH™  
SuperFET™  
SuperSOT-3  
SuperSOT-6  
SuperSOT-8  
SupreMOS®  
Fairchild Semiconductor®  
FACT Quiet Series™  
FACT®  
OPTOLOGIC®  
UHC®  
FAST®  
OPTOPLANAR®  
Ultra FRFET™  
UniFET™  
VCX™  
FastvCore™  
®
SyncFET™  
Sync-Lock™  
FETBench™  
FlashWriter®  
*
PDP SPM™  
VisualMax™  
XS™  
FPS™  
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.  
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANYLIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
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SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,  
WHICH COVERS THESE PRODUCTS.  
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE  
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a)  
are intended for surgical implant into the body or (b) support or  
sustain life, and (c) whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in a significant injury of the user.  
2. A critical component in any component of a life support, device, or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
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under Sales Support.  
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PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet  
Product Status  
Definition  
Identification  
Datasheet contains the design specifications for product development. Specifications may change  
in any manner without notice.  
Advance Information  
Preliminary  
Formative / In Design  
First Production  
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild  
Semiconductor reserves the right to make changes at any time without notice to improve design.  
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve the design.  
No Identification Needed Full Production  
Obsolete Not In Production  
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.  
The datasheet is for reference information only.  
Rev. I49  
©2005 Fairchild Semiconductor Corporation  
MOC306XM, MOC316XM Rev. 1.0.4  
www.fairchildsemi.com  
10  

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