ISL9V2040S3STS62Z_技术文档

January 2002

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3

TM

EcoSPARK 200mJ, 400V, N-Channel Ignition IGBT

General Description

Applications

The ISL9V2040D3S, ISL9V2040S3S, and ISL9V2040P3 are the

next generation ignition IGBTs that offer outstanding SCIS

capability in the space saving D-Pak (TO-252), as well as the

industry standard D²-Pak (TO-263) and TO-220 plastic packages.

This device is intended for use in automotive ignition circuits,

specifically as a coil driver. Internal diodes provide voltage clamping

without the need for external components.

•

Automotive Ignition Coil Driver Circuits

Coil- On Plug Applications

Features

•

Space saving D - Pak package available

o

SCIS Energy = 200mJ at T = 25 C

J

Logic Level Gate Drive

EcoSPARK™ devices can be custom made to specific clamp

voltages. Contact your nearest Fairchild sales office for more

information.

Formerly Developmental Type 49444

Package

Symbol

COLLECTOR

JEDEC TO-252AA

D-Pak

JEDEC TO-263AB

D²-Pak

JEDEC TO-220AB

R₁

R₂

GATE

G

E

EMITTER

COLLECTOR

(FLANGE)

COLLECTOR

(FLANGE)

Device Maximum Ratings ^T= 25°C unless otherwise noted

A

Symbol

Parameter

Collector to Emitter Breakdown Voltage (I = 1 mA)

Ratings

Units

V

BV

430

24

CER

ECS

C

Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)

V

C

E

At Starting T = 25°C, I = 11.5A, L = 3.0mHy

SCIS

200

mJ

A

SCIS25

J

E

At Starting T = 150°C, I = 8.9A, L = 3.0mHy

SCIS

120

SCIS150

J

I

Collector Current Continuous, At T = 25°C, See Fig 9

10

C25

C

I

Collector Current Continuous, At T = 110°C, See Fig 9

10

A

C110

C

V

Gate to Emitter Voltage Continuous

±10

V

GEM

P

Power Dissipation Total T = 25°C

130

W

D

C

Power Dissipation Derating T > 25°C

0.87

-40 to 175

300

W/°C

°C

kV

C

T

Operating Junction Temperature Range

J

T

Storage Junction Temperature Range

STG

T

Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)

Max Lead Temp for Soldering (Package Body for 10s)

Electrostatic Discharge Voltage at 100pF, 1500Ω

L

T

260

pkg

ESD

4

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B, February 2002

Package Marking and Ordering Information

Device Marking

V2040D

Device

Package

TO-252AA

TO-263AB

TO-252AA

TO-263AB

TO-220AB

Reel Size

330mm

Tube

Tape Width

16mm

24mm

N/A

Quantity

2500 units

800 units

75 units

ISL9V2040D3ST

ISL9V2040S3ST

ISL9V2040D3S

ISL9V2040S3S

ISL9V2040P3

V2040S

V2040D

V2040S

Tube

N/A

50 units

V2040P

Tube

N/A

50 units

Electrical Characteristics ^T= 25°C unless otherwise noted

A

Symbol

Parameter

Test Conditions

Min

Typ

400

420

-

Max

Units

Off State Characteristics

BV

Collector to Emitter Breakdown Voltage

Emitter to Collector Breakdown Voltage

I

R

= 2mA, V = 0,

370

390

30

430

450

-

V

CER

C

GE

= 1KΩ, See Fig. 15

T = -40 to 150°C

G

J

I

R

= 10mA, V = 0,

GE

= 0, See Fig. 15

T = -40 to 150°C

CES

C

G

J

BV

I = -75mA, V = 0V,

C GE

ECS

T

= 25°C

C

Gate to Emitter Breakdown Voltage

Collector to Emitter Leakage Current

I

= ± 2mA

±12

±14

-

V

GES

I

V

R

= 250V,

= 1KΩ, See

Fig. 11

T

= 25°C

-

25

1

µA

mA

CER

C

G

= 150°C

C

I

Emitter to Collector Leakage Current

V

= 24V,

T

= 25°C

-

1

40

-

mA

Ω

ECS

EC

C

See Fig. 11

= 150°C

-

C

R

Series Gate Resistance

70

-

1

2

Gate to Emitter Resistance

10K

26K

Ω

On State Characteristics

V

Collector to Emitter Saturation Voltage

I

V

= 6A,

T = 25°C,

C

See Fig. 3

T = 150°C

C

-

1.45

1.95

1.9

2.3

V

CE(SAT)

C

= 4V

GE

V

Collector to Emitter Saturation Voltage

I

= 10A,

CE(SAT)

C

V

= 4.5V

See Fig. 4

GE

Dynamic Characteristics

Q

Gate Charge

I

= 10A, V = 12V,

-

12

-

nC

G(ON)

C

CE

V

= 5V, See Fig. 14

GE

V

Gate to Emitter Threshold Voltage

I

V

= 1.0mA,

T

= 25°C

1.3

-

2.3

1.8

V

GE(TH)

C

= V

CE

GE,

= 150°C

0.75

See Fig. 10

V

Gate to Emitter Plateau Voltage

I

= 10A,

-

3.4

-

V

GEP

C

V

= 12V

CE

Switching Characteristics

t

Current Turn-On Delay Time-Resistive

Current Rise Time-Resistive

V

= 14V, R = 1Ω,

-

0.61

2.17

-

µs

d(ON)R

CE

GE

L

= 5V, R = 1KΩ

t

G

riseR

T = 25°C

J

t

Current Turn-Off Delay Time-Inductive

Current Fall Time-Inductive

V

= 300V, L = 500µHy,

-

3.64

2.36

-

µs

d(OFF)L

CE

GE

= 5V, R = 1KΩ

t

G

fL

T = 25°C, See Fig. 12

J

SCIS

Self Clamped Inductive Switching

T = 25°C, L = 3.0mHy,

-

200

mJ

J

R

= 1KΩ, V = 5V, See

G

GE

Fig. 1 & 2

Thermal Characteristics

R

Thermal Resistance Junction-Case

TO-252, TO-263, TO-220

-

1.15

°C/W

θJC

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B February 2002

Typical Performance Curves ^(Continued)

20

18

16

14

12

10

8

R

= 1KΩ, V = 5V,V = 14V

GE dd

G

R = 1KΩ, V = 5V,V = 14V

G GE dd

18

16

14

12

10

8

T

= 25°C

J

T

= 25°C

J

T

= 150°C

J

T

= 150°C

J

6

4

2

SCIS Curves valid for V

Voltages of <430V

SCIS Curves valid for V

Voltages of <430V

clamp

0

2

4

6

8

10

0

20

40

60

80 100 120 140 160 180 200

, TIME IN CLAMP (µS)

t

L, INDUCTANCE (mHy)

CLP

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp

Figure 2. Self Clamped Inductive Switching

Current vs Inductance

2.4

1.60

I

= 10A

CE

I

= 6A

CE

1.55

1.50

V

= 3.7V

GE

V

= 3.7V

GE

2.2

2.0

1.8

1.6

1.4

V

= 4.0V

GE

V

= 4.0V

GE

1.45

1.40

V

= 4.5V

GE

V

= 4.5V

GE

1.35

1.30

1.25

V

= 5.0V

GE

V

= 5.0V

GE

V

= 8.0V

V

= 8.0V

GE

-75

-25

25

75

125

175

-75

-25

25

75

125

175

T , JUNCTION TEMPERATURE (°C)

J

Figure 3. Collector to Emitter On-State Voltage vs

Junction Temperature

Figure 4. Collector to Emitter On-State Voltage

vs Junction Temperature

20

V

= 8.0V

= 5.0V

V

= 8.0V

= 5.0V

= 4.5V

= 4.0V

= 3.7V

GE

V

= 4.5V

= 4.0V

= 3.7V

GE

15

10

5

15

10

5

0

T

= 25°C

J

T

= - 40°C

J

0

1.0

2.0

3.0

4.0

0

1.0

2.0

3.0

4.0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

Figure 5. Collector to Emitter On-State Voltage vs

Collector Current

Figure 6. Collector to Emitter On-State Voltage

vs Collector Current

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B February 2002

Typical Performance Curves ^(Continued)

30

25

20

15

10

5

20

DUTY CYCLE < 0.5%, V = 5V

CE

V

= 8.0V

= 5.0V

= 4.5V

= 4.0V

= 3.7V

GE

PULSE DURATION = 250µs

V

GE

15

10

5

V

GE

T

= 150°C

J

T

= 25°C

J

T

= 175°C

J

T

= -40°C

J

0

1.0

2.0

3.0

4.0

1.0

2.0

V , GATE TO EMITTER VOLTAGE (V)

GE

3.0

4.0

5.0

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current

Figure 8. Transfer Characteristics

2.4

15.0

V

= V

GE

CE

V

= 4.0V

GE

I

= 1mA

CE

2.2

2.0

1.8

1.6

1.4

1.2

12.5

10.0

7.5

5.0

2.5

0

-50

-25

0

25

JUNCTION TEMPERATURE (°C)

J

50

75

100 125 150 175

25

50

75

100

125

150

175

T , CASE TEMPERATURE (°C)

T

C

Figure 9. DC Collector Current vs Case

Temperature

Figure 10. Threshold Voltage vs Junction

Temperature

10000

1000

100

10

I

= 6.5A, V = 5V, R = 1KΩ

GE G

CE

V

= 24V

ECS

Inductive t

OFF

8

6

4

2

Resistive t

OFF

V

= 300V

CES

1

Resistive t

150

V

= 250V

ON

CES

0.1

-50

-25

0

25

50

75

100 125 150 175

25

50

75

100

125

175

T , JUNCTION TEMPERATURE (°C)

J

Figure 11. Leakage Current vs Junction

Temperature

Figure 12. Switching Time vs Junction

Temperature

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B February 2002

Typical Performance Curves ^(Continued)

8

7

6

5

4

3

2

1

0

1200

I

= 1mA, R = 1.25Ω, T = 25°C

FREQUENCY = 1 MHz

G(REF)

L

J

1000

800

V

= 12V

CE

C

IES

600

400

200

0

C

RES

V

= 6V

10

CE

C

OES

0

5

15

20

25

0

5

10

15

20

25

V

, COLLECTOR TO EMITTER VOLTAGE (V)

CE

Q

, GATE CHARGE (nC)

G

Figure 13. Capacitance vs Collector to Emitter

Voltage

Figure 14. Gate Charge

415

410

405

400

395

I

= 10mA

CER

T

= - 40°C

J

T

= 175°C

J

390

385

380

375

370

T

= 25°C

J

10

100

, SERIES GATE RESISTANCE (kΩ)

1000

2000

3000

R

G

Figure 15. Breakdown Voltage vs Series Gate Resistance

0

10

0.5

0.2

t

0.1

1

-1

10

P

D

0.05

t

2

0.02

DUTY FACTOR, D = t / t

1

2

0.01

PEAK T = (P X Z

X R ) + T

J

D

θJC

θJC C

SINGLE PULSE

-2

10

-5

-4

-3

-2

-1

0

10

T , RECTANGULAR PULSE DURATION (s)

1

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B February 2002

Test Circuit and Waveforms

L

V_CE

R

or

L

LOAD

C

R_G

R_G= 1KΩ

PULSE

+

-

G

DUT

GEN

V_CE

DUT

G

5V

E

Figure 17. Inductive Switching Test Circuit

Figure 18. t_ONand t_OFFSwitching Test Circuit

V

BV

CES

CE

t

P

V

CE

L

I

AS

V

DD

VARY t TO OBTAIN

P

+

-

R

REQUIRED PEAK I

G

AS

V

DD

V

GE

DUT

t

P

I

0V

AS

0

0.01Ω

t

AV

Figure 19. Unclamped Energy Test Circuit

Figure 20. Unclamped Energy Waveforms

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B February 2002

SPICE Thermal Model

JUNCTION

th

REV 16 August 2001

ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3

CTHERM1 th 6 1.6e -3

CTHERM2 6 5 2.8e -4

CTHERM3 5 4 1.5e -3

CTHERM4 4 3 4.8e -2

CTHERM5 3 2 4.7e -2

CTHERM6 2 tl 4.8e -2

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM1

6

RTHERM1 th 6 1.2e -1

RTHERM2 6 5 3.2e -1

RTHERM3 5 4 1.7e -1

RTHERM4 4 3 1.2e -1

RTHERM5 3 2 1.3e -1

RTHERM6 2 tl 2.5e -1

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

5

SABER Thermal Model

SABER thermal model

ISL9V2040D3S, ISL9V2040S3S, ISL9V2040P3

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th 6 = 1.6e -3

ctherm.ctherm2 6 5 = 2.8e -4

ctherm.ctherm3 5 4 = 1.5e -3

ctherm.ctherm4 4 3 = 4.8e -2

ctherm.ctherm5 3 2 = 4.7e -2

ctherm.ctherm6 2 tl = 4.8e -2

4

3

2

rtherm.rtherm1 th 6 = 1.2e -1

rtherm.rtherm2 6 5 = 3.2e -1

rtherm.rtherm3 5 4 = 1.7e -1

rtherm.rtherm4 4 3 = 1.2e -1

rtherm.rtherm5 3 2 = 1.3e -1

rtherm.rtherm6 2 tl = 2.5e -1

}

tl

CASE

ISL9V2040D3S / ISL9V2040S3S / ISL9V2040P3 Rev. B February 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

â

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4


型号：	ISL9V2040S3STS62Z
厂家：	FAIRCHILD SEMICONDUCTOR
描述：	Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 汽车点火栅晶体管
文件：	总8页 (文件大小：123K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISL9V2040S3STS62Z [FAIRCHILD]

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