ISL9V2540S3S [FAIRCHILD]
EcoSPARK N-Channel Ignition IGBT; EcoSPARK N沟道IGBT点火
| 型号： | ISL9V2540S3S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | EcoSPARK N-Channel Ignition IGBT |
| 文件： | 总9页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2005
ISL9V2540S3S
TM
EcoSPARK N-Channel Ignition IGBT
250mJ, 400V
Features
! SCIS Energy = 250mJ at T = 25 C
General Description
o
The ISL9V2540S3S is a next generation ignition IGBT that
offers outstanding SCIS capability in the industry standard
D²-Pak (TO-263) plastic package. This device is intended
for use in automotive ignition circuits, specifically as a coil
driver. Internal diodes provide voltage clamping without the
need for external components.
J
! Logic Level Gate Drive
Applications
! Automotive Ignition Coil Driver Circuits
EcoSPARK™ devices can be custom made to specific
clamp voltages. Contact your nearest Fairchild sales office
for more information.
! Coil - On Plug Applications
Package
Symbol
COLLECTOR
R1
GATE
GATE
EMITTER
R2
COLLECTOR
(FLANGE)
JEDEC TO-263AB
EMITTER
2
D -Pak
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev. A
www.fairchildsemi.com
Device Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Ratings
430
Units
V
BV
BV
CER
ECS
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)
24
V
C
E
At Starting T = 25°C, I = 12.9A, L = 3.0mHy
SCIS
250
mJ
mJ
A
SCIS25
J
E
At Starting T = 150°C, I = 10A, L = 3.0mHy
SCIS
150
SCIS150
J
I
Collector Current Continuous, At T = 25°C, See Fig 9
15.5
C25
C
I
Collector Current Continuous, At T = 110°C, See Fig 9
15.3
A
C110
C
V
Gate to Emitter Voltage Continuous
±10
V
GEM
P
Power Dissipation Total T = 25°C
166.7
1.11
W
D
C
Power Dissipation Derating T > 25°C
W/°C
°C
°C
°C
°C
kV
C
T
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
J
T
Storage Junction Temperature Range
STG
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω (HBM)
L
T
260
pkg
ESD
4
Package Marking and Ordering Information
Device Marking
V2540S
Device
Package
TO-263AB
TO-263AB
Reel Size
330mm
Tube
Tape Width
Quantity
ISL9V2540S3ST
ISL9V2540S3S
24mm
N/A
800 units
50 units
V2540S
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
370
390
30
Typ
400
420
-
Max
Units
Off State Characteristics
BV
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
R
= 2mA, V = 0,
430
450
-
V
V
V
CER
C
GE
= 1KΩ, See Fig. 15
T = -40 to 150°C
G
J
I
R
= 10mA, V = 0,
GE
= 0, See Fig. 15
T = -40 to 150°C
CES
C
G
J
BV
BV
I = -75mA, V = 0V,
C GE
ECS
T
= 25°C
C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= ± 2mA
±12
±14
-
25
1
V
GES
GES
I
V
R
= 250V,
= 1KΩ,
See Fig. 11
T
T
= 25°C
-
-
-
-
µA
mA
CER
CER
C
G
= 150°C
C
I
Emitter to Collector Leakage Current
V
= 24V, See T = 25°C
-
-
-
1
40
-
mA
mA
Ω
ECS
EC
C
Fig. 11
T
= 150°C
-
-
C
R
R
Series Gate Resistance
70
-
1
2
Gate to Emitter Resistance
10K
26K
Ω
On State Characteristics
V
Collector to Emitter Saturation Voltage
I
V
= 6A,
T = 25°C,
C
See Fig. 3
T = 150°C
C
-
-
1.37
1.77
1.8
2.2
V
V
CE(SAT)
C
= 4V
GE
V
Collector to Emitter Saturation Voltage
I
= 10A,
CE(SAT)
C
V
= 4.5V
See Fig. 4
GE
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
Dynamic Characteristics
Q
Gate Charge
I
= 10A, V = 12V,
-
15.1
-
nC
G(ON)
C
CE
V
= 5V, See Fig. 14
GE
V
Gate to Emitter Threshold Voltage
I
V
= 1.0mA,
T
T
= 25°C
1.3
-
-
2.2
1.8
V
V
GE(TH)
C
C
C
= V
CE
GE,
= 150°C
0.75
See Fig. 10
V
Gate to Emitter Plateau Voltage
I
= 10A,
-
3.1
-
V
GEP
C
V
= 12V
CE
Switching Characteristics
t
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
V
= 14V, R = 1Ω,
-
-
0.61
2.17
-
-
µs
µs
d(ON)R
CE
L
= 5V, R = 1KΩ
t
GE
G
riseR
T = 25°C
J
t
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
V
V
= 300V, L = 500µHy,
-
-
3.64
2.36
-
-
µs
µs
d(OFF)L
CE
GE
= 5V, R = 1KΩ
t
G
fL
T = 25°C, See Fig. 12
J
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0mHy,
-
-
-
-
250
0.9
mJ
J
R
= 1KΩ, V = 5V, See
G
GE
Fig. 1 & 2
Thermal Characteristics
R
Thermal Resistance Junction-Case
TO-263
°C/W
θJC
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
Typical Performance Curves
40
40
35
30
25
20
15
10
5
R
= 1KΩ, V = 5V,V = 14V
GE dd
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
G
35
30
25
20
15
10
5
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
SCIS Curves valid for Vclamp Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
5
0
0
0
0
25
50
75
100
125
150
175
200
1
2
3
4
6
7
8
9
10
t
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.55
2.2
V
= 3.5V
= 4.0V
GE
I
= 10A
I
= 6A
CE
CE
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
V
= 3.5V
1.50
1.45
1.40
1.35
1.30
1.25
GE
V
= 4.5V
V
GE
GE
V
= 4.0V
GE
V
= 4.5V
GE
V
= 5.0V
GE
V
= 5.0V
GE
V
= 10.0V
GE
V
= 10.0V
GE
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
20
V
= 10.0V
V
= 10.0V
GE
GE
V
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
V
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
V
V
V
V
V
V
V
V
15
10
5
15
10
5
T
= 25°C
T
= - 40°C
J
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
Typical Performance Curves (Continued)
20
20
15
10
5
V
= 10.0V
GE
DUTY CYCLE < 0.5%, V = 5V
CE
PULSE DURATION = 250µs
V
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
GE
GE
GE
GE
GE
15
10
5
V
V
V
V
T
= 175°C
J
T
= 25°C
J
T
= -40°C
T
= 175°C
J
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
175
175
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
GE
CE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
16
2.0
V
= V
GE
= 1mA
CE
V
= 4.0V
GE
I
CE
14
12
10
8
1.8
1.6
1.4
1.2
1.0
6
4
2
0
25
50
75
100
125
150
175
-50
-25
0
25
T JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
T
, CASE TEMPERATURE (°C)
C
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
1000
100
10
10
Inductive t
I
= 6.5A, V = 5V, R = 1KΩ
GE G
OFF
CE
V
= 24V
ECS
9
8
7
6
5
4
3
2
Resistive t
OFF
V
V
= 300V
CES
CES
1
Resistive t
ON
= 250V
75
0.1
25
50
75
100
125
150
-50
-25
0
25
50
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
Typical Performance Curves (Continued)
10
8
1500
I
= 1mA, R = 1.25Ω,
T = 25°C
J
G(REF)
L
FREQUENCY = 1 MHz
1250
1000
CIES
6
V
= 12V
CE
750
4
500
CRES
2
250
COES
V
= 6V
Q
CE
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
, GATE CHARGE (nC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
G
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
445
440
435
430
T
= - 40°C
J
T
= 175°C
425
420
415
410
405
J
T
= 25°C
J
10
100
1000
5000
R
, SERIES GATE RESISTANCE (Ω)
G
Figure 15. Breakdown Voltage vs Series Gate Resistance
0
10
0.5
0.2
0.1
t1
-1
10
10
0.05
0.02
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
-2
-5
-4
-3
-2
-1
10
10
10
T , RECTANGULAR PULSE DURATION (s)
10
10
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
Test Circuit and Waveforms
L
VCE
R
or
L
LOAD
C
C
RG
RG = 1KΩ
PULSE
+
-
G
DUT
GEN
VCE
DUT
G
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GE
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
SPICE Thermal Model
JUNCTION
th
REV 16 May 2005
ISL9V2540S3S
CTHERM1 th 6 19e -4
CTHERM2 6 5 12e -3
CTHERM3 5 4 15e -3
CTHERM4 4 3 25e -3
CTHERM5 3 2 69e -3
CTHERM6 2 tl 100e -3
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
RTHERM1 th 6 80e -3
RTHERM2 6 5 81e -3
RTHERM3 5 4 82e -3
RTHERM4 4 3 100e -3
RTHERM5 3 2 150e -3
RTHERM6 2 tl 1645e -4
5
4
3
2
SABER Thermal Model
ISL9V2540S3S
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 19e -4
ctherm.ctherm2 6 5 = 12e -3
ctherm.ctherm3 5 4 = 15e -3
ctherm.ctherm4 4 3 = 25e -3
ctherm.ctherm5 3 2 = 69e -3
ctherm.ctherm6 2 tl = 100e -3
rtherm.rtherm1 th 6 = 80e -3
rtherm.rtherm2 6 5 = 81e -3
rtherm.rtherm3 5 4 = 82e -3
rtherm.rtherm4 4 3 = 100e -3
rtherm.rtherm5 3 2 = 150e -3
tl
CASE
rtherm.rtherm6 2 tl = 1645e -4
}
©2005 Fairchild Semiconductor Corporation
ISL9V2540S3S Rev A.
www.fairchildsemi.com
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
®
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER
SMART START™
SPM™
®
UltraFET
HiSeC™
I2C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
®
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
相关型号：
ISL9V2540S3ST-SB49015
Insulated Gate Bipolar Transistor, 15.5A I(C), 450V V(BR)CES, N-Channel
FAIRCHILD
ISL9V2540S3ST_NL
Insulated Gate Bipolar Transistor, 15.5A I(C), 390V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
FAIRCHILD
ISL9V2540S3S_NL
Insulated Gate Bipolar Transistor, 15.5A I(C), 390V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明