ISL9V3036D3S_04 [FAIRCHILD]
EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT; EcoSPARKTM 300mJ ， 360V ， N沟道IGBT点火
| 型号： | ISL9V3036D3S_04 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | EcoSPARKTM 300mJ, 360V, N-Channel Ignition IGBT |
| 文件： | 总8页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2004
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
TM
EcoSPARK 300mJ, 360V, N-Channel Ignition IGBT
General Description
Applications
•
•
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications
The ISL9V3036D3S, ISL9V3036S3S, and ISL9V3036P3 are the
next generation IGBTs that offer outstanding SCIS capability in the
space saving D-Pak (TO-252), as well as the industry standard D²-
Pak (TO-263) and TO-220 plastic packages. These devices are
intended for use in automotive ignition circuits, specifically as a coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
Features
2
•
•
•
Industry Standard D -Pak package
o
SCIS Energy = 300mJ at T = 25 C
J
Logic Level Gate Drive
EcoSPARK™ devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
Formerly Developmental Type 49442
Package
Symbol
COLLECTOR
JEDEC TO-252AA
D-Pak
JEDEC TO-263AB
D²-Pak
JEDEC TO-220AB
E
C
G
R1
R2
GATE
G
G
E
E
EMITTER
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings T = 25°C unless otherwise noted
J
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Ratings
Units
V
BV
BV
360
24
CER
ECS
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)
V
C
E
T = 25°C, I = 14.2A, L = 3.0 mHy
SCIS
300
mJ
mJ
A
SCIS25
J
E
T = 150°C, I = 10.6A, L = 3.0 mHy
SCIS
170
SCIS150
J
I
Collector Current Continuous, At T = 25°C, See Fig 9
21
C25
C
I
Collector Current Continuous, At T = 110°C, See Fig 9
17
A
C110
C
V
Gate to Emitter Voltage Continuous
±10
V
GEM
P
Power Dissipation Total T = 25°C
150
W
D
C
Power Dissipation Derating T > 25°C
1.0
W/°C
°C
°C
°C
°C
kV
C
T
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
J
T
Storage Junction Temperature Range
STG
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
L
T
260
pkg
ESD
4
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
Package Marking and Ordering Information
Device Marking
V3036D
Device
Package
TO-252AA
TO-263AB
TO-220AA
TO-252AA
TO-263AB
Reel Size
330mm
330mm
Tube
Tape Width
16mm
24mm
N/A
Quantity
2500
800
ISL9V3036D3ST
ISL9V3036S3ST
ISL9V3036P3
ISL9V3036D3S
ISL9V3036S3S
V3036S
V3036P
50
V3036D
Tube
N/A
75
V3036S
Tube
N/A
50
Electrical Characteristics T = 25°C unless otherwise noted
J
Symbol
Parameter
Test Conditions
Min
Typ
360
380
-
Max
390
410
-
Units
Off State Characteristics
BV
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
R
= 2mA, V = 0,
330
350
30
V
V
V
CER
C
GE
= 1KΩ, See Fig. 15
T = -40 to 150°C
G
J
I
R
= 10mA, V = 0,
GE
= 0, See Fig. 15
T = -40 to 150°C
CES
C
G
J
BV
BV
I = -75mA, V = 0V,
C GE
ECS
T
= 25°C
C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= ± 2mA
±12
±14
-
25
1
V
GES
GES
I
V
R
= 250V,
= 1KΩ,
See Fig. 11
T
T
= 25°C
-
-
-
-
µA
mA
CER
CER
C
G
= 150°C
C
I
Emitter to Collector Leakage Current
V
= 24V, See T = 25°C
-
-
-
1
40
-
mA
mA
Ω
ECS
EC
C
Fig. 11
T
= 150°C
-
-
C
R
R
Series Gate Resistance
70
-
1
2
Gate to Emitter Resistance
10K
26K
Ω
On State Characteristics
V
V
V
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
V
= 6A,
T = 25°C,
C
See Fig. 3
T = 150°C,
C
See Fig. 4
T = 150°C
C
-
-
-
1.25
1.58
1.90
1.60
1.80
2.20
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
C
= 4V
GE
I
V
= 10A,
C
= 4.5V
GE
I
= 15A,
C
V
= 4.5V
GE
Dynamic Characteristics
Q
Gate Charge
I
= 10A, V = 12V,
-
17
-
nC
G(ON)
C
CE
V
= 5V, See Fig. 14
GE
V
Gate to Emitter Threshold Voltage
I
V
= 1.0mA,
T
T
= 25°C
1.3
-
-
2.2
1.8
V
V
GE(TH)
C
C
C
= V
CE
GE,
= 150°C
0.75
See Fig. 10
V
Gate to Emitter Plateau Voltage
I
= 10A,
V
= 12V
CE
-
3.0
-
V
GEP
C
Switching Characteristics
t
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
V
= 14V, R = 1Ω,
-
-
0.7
2.1
4
7
µs
µs
d(ON)R
CE
L
= 5V, R = 1KΩ
t
GE
G
rR
T = 25°C, See Fig. 12
J
t
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
V
V
= 300V, R = 500µH,
-
-
4.8
2.8
15
15
µs
µs
d(OFF)L
CE
L
= 5V, R = 1KΩ
t
GE
G
fL
T = 25°C, See Fig. 12
J
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0 mH,
-
-
300
mJ
J
R
= 1KΩ, V = 5V
GE
G
Thermal Characteristics
R
Thermal Resistance Junction-Case
TO-252, TO-263, TO-220
-
-
1.0
°C/W
θJC
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
Typical Performance Curves
30
30
25
20
15
10
5
R
= 1kΩ, V = 5V, V = 14V
GE dd
R
= 1kΩ, V = 5V, V = 14V
GE dd
G
G
25
20
15
10
5
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
SCIS Curves valid for V
Voltages of <390V
SCIS Curves valid for V
Voltages of <390V
clamp
clamp
0
0
0
2
4
6
8
10
0
25
50
75
100
125
150
175
200
t
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.30
1.8
I
= 6A
V
= 3.7V
CE
GE
I
= 10A
CE
1.7
1.6
1.5
1.4
1.3
1.2
V
= 4.0V
GE
V
= 3.7V
GE
1.26
1.22
1.18
1.14
V
= 4.0V
GE
V
= 4.5V
GE
V
= 5.0V
GE
V
= 4.5V
GE
V
= 8.0V
GE
V
= 5.0V
GE
V
= 8.0V
GE
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage vs
Junction Temperature
25
25
V
V
V
V
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
V
V
V
V
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
GE
GE
GE
20
15
10
5
20
15
10
GE
GE
GE
GE
GE
GE
5
0
T
= 25°C
J
T
= - 40°C
J
0
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage vs
Collector Current
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
Typical Performance Curves (Continued)
25
25
20
15
10
5
DUTY CYCLE < 0.5%, V = 5V
CE
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
PULSE DURATION = 250µs
V
V
V
GE
GE
GE
20
15
10
5
V
GE
T
= 150°C
J
T
= 25°C
J
T
= -40°C
J
T
= 175°C
J
0
0
0
1.0
2.0
3.0
4.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
25
2.2
V
= V
GE
CE
V
= 4.0V
GE
I
= 1mA
CE
2.0
1.8
1.6
1.4
1.2
1.0
20
15
10
5
0
-50
-25
0
25
T JUNCTION TEMPERATURE (°C)
J
50
75
100 125 150 175
25
50
75
100
125
150
175
T
, CASE TEMPERATURE (°C)
C
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
12
10000
1000
100
10
I
= 6.5A, V = 5V, R = 1KΩ
CE
GE
G
V
= 24V
ECS
Resistive t
OFF
10
8
Inductive t
OFF
6
V
= 300V
CES
25
1
4
Resistive t
V
= 250V
ON
CES
0.1
2
-50
-25
0
50
75
100 125 150 175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
Typical Performance Curves (Continued)
1600
8
7
6
5
4
3
2
1
0
I
= 1mA, R = 1.25Ω,
T = 25°C
J
FREQUENCY = 1 MHz
G(REF)
L
1200
C
IES
V
= 12V
CE
800
400
0
C
RES
V
= 6V
12
CE
C
OES
0
4
8
16
20
24
28
32
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Q
, GATE CHARGE (nC)
G
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
375
I
= 10mA
CER
370
365
360
355
350
345
340
335
T
= - 40°C
J
T
= 25°C
J
T
= 175°C
J
10
100
1K
10K
R
, SERIES GATE RESISTANCE (Ω)
G
Figure 15. Breakdown Voltage vs Series Gate Resistance
0
10
0.5
0.2
0.1
t
1
-1
0.05
10
P
D
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R ) + T
J
D
θ
JC
θJC C
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
0
10
10
10
10
10
10
T , RECTANGULAR PULSE DURATION (s)
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
Test Circuit and Waveforms
L
VCE
R
or
L
LOAD
C
C
RG
RG = 1KΩ
PULSE
+
-
G
DUT
GEN
VCE
DUT
G
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GE
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
SPICE Thermal Model
JUNCTION
th
REV 24 April 2002
ISL9V3036D3S/ ISL9V3036S3S / ISL9V3036P3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3
template thermal_model th tl
thermal_c th, tl
4
3
2
{
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
tl
CASE
©2004 Fairchild Semiconductor Corporation
ISL9V3036D3S / ISL9V3036S3S / ISL9V3036P3 Rev. C3, October 2004
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
Stealth™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
QS™
QT Optoelectronics™ TinyLogic
HiSeC™
I2C™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TINYOPTO™
TruTranslation™
UHC™
i-Lo™
ImpliedDisconnect™
FACT Quiet Series™
UltraFET
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
SILENT SWITCHER VCX™
SMART START™
SPM™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I13
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