FSB50550T [FAIRCHILD]

Smart Power Module (SPM); 智能功率模块( SPM )
FSB50550T
型号: FSB50550T
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Smart Power Module (SPM)
智能功率模块( SPM )

运动控制电子器件 信号电路 光电二极管 电动机控制
文件: 总8页 (文件大小:158K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
September 2006  
FSB50550T  
Smart Power Module (SPM)  
Features  
General Description  
FSB50550T is a tiny smart power module (SPM) based on  
FRFET technology as a compact inverter solution for small  
power motor drive applications such as fan motors and water  
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),  
and 3 half-bridge HVICs for FRFET gate driving. FSB50550T  
provides low electromagnetic interference (EMI) characteristics  
with optimized switching speed. Moreover, since it employs  
FRFET as a power switch, it has much better ruggedness and  
larger safe operation area (SOA) than that of an IGBT-based  
power module or one-chip solution. The package is optimized  
for the thermal performance and compactness for the use in the  
built-in motor application and any other application where the  
assembly space is concerned. FSB50550T is the most solution  
for the compact inverter providing the energy efficiency,  
compactness, and low electromagnetic interference.  
500V 3.5A 3-phase FRFET inverter including high voltage  
integrated circuit (HVIC)  
3 divided negative dc-link terminals for inverter current sens-  
ing applications  
HVIC for gate driving and undervoltage protection  
3/5V CMOS/TTL compatible, active-high interface  
Optimized for low electromagnetic interference  
Isolation voltage rating of 1500Vrms for 1min.  
Extended VB pin for PCB isolation  
Absolute Maximum Ratings  
Symbol  
Parameter  
Conditions  
Rating  
Units  
DC Link Input Voltage,  
VPN  
500  
V
Drain-source Voltage of each FRFET  
Each FRFET Drain Current, Continuous  
Each FRFET Drain Current, Continuous  
Each FRFET Drain Current, Peak  
Maximum Power Dissipation  
Control Supply Voltage  
ID25  
ID80  
IDP  
PD  
TC = 25°C  
TC = 80°C  
1.8  
A
A
1.2  
TC = 25°C, PW < 100µs  
3.5  
A
TC = 80°C, Each FRFET  
4.5  
20  
W
V
VCC  
VBS  
VIN  
TJ  
Applied between VCC and COM  
Applied between VB(U)-U, VB(V)-V, VB(W)-W  
Applied between IN and COM  
High-side Bias Voltage  
20  
V
Input Signal Voltage  
-0.3 ~ VCC+0.3  
-20 ~ 150  
V
Operating Junction Temperature  
°C  
TSTG  
RθJC  
Storage Temperature  
-50 ~ 150  
8.6  
°C  
Each FRFET under inverter operating con-  
dition (Note 1)  
Junction to Case Thermal Resistance  
°C/W  
60Hz, Sinusoidal, 1 minute, Connection  
pins to heatsink  
VISO  
Isolation Voltage  
1500  
Vrms  
©2006 Fairchild Semiconductor Corporation  
FSB50550T Rev. A  
1
www.fairchildsemi.com  
Pin Descriptions  
Pin Number  
Pin Name  
Pin Description  
1
2
COM  
VB(U)  
VCC(U)  
IN(UH)  
IN(UL)  
NC  
IC Common Supply Ground  
Bias Voltage for U Phase High Side FRFET Driving  
Bias Voltage for U Phase IC and Low Side FRFET Driving  
Signal Input for U Phase High-side  
3
4
5
Signal Input for U Phase Low-side  
6
No Connection  
7
VB(V)  
VCC(V)  
IN(VH)  
IN(VL)  
NC  
Bias Voltage for V Phase High Side FRFET Driving  
Bias Voltage for V Phase IC and Low Side FRFET Driving  
Signal Input for V Phase High-side  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
Signal Input for V Phase Low-side  
No Connection  
VB(W)  
VCC(W)  
IN(WH)  
IN(WL)  
NC  
Bias Voltage for W Phase High Side FRFET Driving  
Bias Voltage for W Phase IC and Low Side FRFET Driving  
Signal Input for W Phase High-side  
Signal Input for W Phase Low-side  
No Connection  
P
Positive DC–Link Input  
U, VS(U)  
NU  
Output for U Phase & Bias Voltage Ground for High Side FRFET Driving  
Negative DC–Link Input for U Phase  
NV  
Negative DC–Link Input for V Phase  
V, VS(V)  
NW  
Output for V Phase & Bias Voltage Ground for High Side FRFET Driving  
Negative DC–Link Input for W Phase  
W, VS(W)  
Output for W Phase & Bias Voltage Ground for High Side FRFET Driving  
(1) COM  
(2) VB(U)  
(3) VCC(U)  
(4) IN(UH)  
(5) IN(UL)  
(17) P  
VCC  
HIN  
VB  
HO  
VS  
LO  
(18) U, VS(U)  
LIN  
COM  
(6) NC  
(19) NU  
(20) NV  
(7) VB(V)  
(8) VCC(V)  
(9) IN(VH)  
(10) IN(VL)  
VCC  
HIN  
VB  
HO  
VS  
LO  
(21) V, VS(V)  
LIN  
COM  
(11) NC  
(12) VB(W)  
(13) VCC(W)  
(14) IN(WH)  
(15) IN(WL)  
VCC  
HIN  
VB  
HO  
VS  
LO  
(22) NW  
(23) W, VS(W)  
LIN  
COM  
(16) NC  
Note:  
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM. External connections should be made as indicated in Figure  
2 and 5.  
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)  
2
www.fairchildsemi.com  
FSB50550T Rev. A  
Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)  
Inverter Part (Each FRFET Unless Otherwise Specified)  
Symbol  
Parameter  
Conditions  
Min Typ Max Units  
Drain-Source Breakdown  
Voltage  
BVDSS  
V
IN= 0V, ID = 250µA (Note 2)  
500  
-
0.53  
-
-
V
V
BVDSS  
TJ  
/
Breakdown Voltage Tem-  
perature Coefficient  
I
D = 250µA, Referenced to 25°C  
-
-
-
-
-
Zero Gate Voltage  
Drain Current  
IDSS  
RDS(on)  
VSD  
V
V
V
IN= 0V, VDS = 500V  
250  
1.7  
1.2  
µA  
Static Drain-Source  
On-Resistance  
CC = VBS = 15V, VIN = 5V, ID = 1.2A  
CC = VBS = 15V, VIN = 0V, ID = -1.2A  
1.3  
-
Drain-Source Diode  
Forward Voltage  
V
tON  
tOFF  
trr  
-
-
-
-
-
560  
440  
130  
71  
-
-
-
-
-
ns  
ns  
ns  
µJ  
µJ  
VPN = 300V, VCC = VBS = 15V, ID = 1.2A  
IN = 0V 5V  
Inductive load L=3mH  
V
Switching Times  
High- and low-side FRFET switching  
EON  
EOFF  
(Note 3)  
11  
V
V
PN = 400V, VCC = VBS = 15V, ID = IDP, REH = 0Ω  
DS=BVDSS, TJ = 150°C  
Reverse-bias Safe Oper-  
ating Area  
RBSOA  
Full Square  
High- and low-side FRFET switching (Note 4)  
Control Part (Each HVIC Unless Otherwise Specified)  
Symbol  
Parameter  
Conditions  
Min Typ Max Units  
IQCC  
Quiescent VCC Current  
VCC=15V, VIN=0V Applied between VCC and COM  
-
-
160  
µA  
Applied between VB(U)-U,  
VBS=15V, VIN=0V  
IQBS  
Quiescent VBS Current  
-
-
100  
µA  
V
B(V)-V, VB(W)-W  
UVCCD  
UVCCR  
UVBSD  
UVBSR  
VIH  
V
CC Undervoltage Protection Detection Level  
VCC Undervoltage Protection Reset Level  
BS Undervoltage Protection Detection Level  
7.4  
8.0  
7.4  
8.0  
2.9  
-
8.0  
8.9  
8.0  
8.9  
-
9.4  
9.8  
9.4  
9.8  
-
V
V
Low-side Undervoltage  
Protection (Figure 6)  
V
V
High-side Undervoltage  
Protection (Figure 7)  
VBS Undervoltage Protection Reset Level  
V
ON Threshold Voltage  
OFF Threshold Voltage  
Logic High Level  
V
Applied between IN and COM  
VIL  
Logic Low Level  
VIN = 5V  
-
0.8  
20  
2
V
IIH  
-
10  
-
µA  
µA  
Input Bias Current  
Applied between IN and COM  
IIL  
VIN = 0V  
-
Note:  
1. For the measurement point of case temperature T , please refer to Figure 3 in page 4.  
C
2. BV  
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM. V should be sufficiently less than this value considering the  
PN  
DSS  
effect of the stray inductance so that V should not exceed BV  
in any case.  
DS  
DSS  
3.  
t
and t  
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the  
OFF  
ON  
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 4 for the switching time definition with the switching test circuit of Figure 5.  
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 5 for the RBSOA test cir-  
cuit that is same as the switching test circuit.  
Package Marking & Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
Quantity  
FSB50550T  
FSB50550T  
SPM23AC  
-
-
15  
3
www.fairchildsemi.com  
FSB50550T Rev. A  
Recommended Operating Conditions  
Value  
Symbol  
Parameter  
Conditions  
Units  
Min.  
-
Typ. Max.  
VPN  
VCC  
VBS  
Supply Voltage  
Applied between P and N  
300  
15  
15  
-
400  
16.5  
16.5  
VCC  
V
V
V
V
V
Control Supply Voltage  
High-side Bias Voltage  
Applied between VCC and COM  
13.5  
13.5  
3.0  
0
Applied between VB and output(U, V, W)  
VIN(ON) Input ON Threshold Voltage  
VIN(OFF) Input OFF Threshold Voltage  
Applied between IN and COM  
-
-
0.6  
Blanking Time for Preventing  
Arm-short  
tdead  
V
CC=VBS=13.5 ~ 16.5V, TJ 150°C  
1.0  
-
-
-
µs  
fPWM  
PWM Switching Frequency  
TJ 150°C  
15  
kHz  
These values depend on PWM  
control algorithm  
C1  
15-V Line  
HIN  
LIN  
Output  
Note  
P
VDC  
R1  
D1  
0
0
Z
Both FRFET Off  
Low-side FRFET On  
High-side FRFET On  
Shoot-through  
VCC  
HIN  
VB  
Inverter  
Output  
R5  
0
1
1
0
0
VDC  
HO  
VS  
LO  
Micom  
LIN  
C3  
C5  
COM  
R3  
1
1
Forbidden  
Z
N
Open  
Open  
Same as (0, 0)  
One-Leg Diagram of SPM  
C2  
10µF  
* Example of bootstrap paramters:  
C
R
1 = C2 = 1µF ceramic capacitor,  
1 = 56Ω,  
Note:  
(1) It is recommended the bootstrap diode D to have soft and fast recovery characteristics with 600-V rating  
1
(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.  
(3) RC coupling(R and C ) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM is compatible with stan-  
5
5
dard CMOS or LSTTL outptus.  
(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C , C  
1
2
and C should have good high-frequency characteristics to absorb high-frequency ripple current.  
3
Figure 2. Recommended CPU Interface and Bootstrap Circuit with Parameters  
14.50mm  
3.80mm  
Case Temperature(Tc)  
Detecting Point  
MOSFET  
Note:  
Attach the thermocouple on top of the heatsink-side of SPM (between SPM and heatsink if applied) to get the correct temperature measurement.  
Figure 3. Case Temperature Measurement  
4
www.fairchildsemi.com  
FSB50550T Rev. A  
VIN  
VIN  
Irr  
120% of ID  
100% of ID  
VDS  
ID  
10% of ID  
ID  
VDS  
tON  
trr  
tOFF  
(a) Turn-on  
(b) Turn-off  
Figure 4. Switching Time Definition  
CBS  
VCC  
ID  
RBS  
VCC  
HIN  
VB  
HO  
VS  
LO  
L
VDC  
LIN  
+
VDS  
-
COM  
One-leg Diagram of SPM  
Figure 5. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)  
Input Signal  
UV Protection  
RESET  
DETECTION  
RESET  
Status  
UVCCR  
Low-side Supply, VCC  
UVCCD  
MOSFET Current  
Figure 6. Undervoltage Protection (Low-side)  
Input Signal  
UV Protection  
Status  
RESET  
DETECTION  
RESET  
UVBSR  
High-side Supply, VBS  
UVBSD  
MOSFET Current  
Figure 7. Undervoltage Protection (High-side)  
5
www.fairchildsemi.com  
FSB50550T Rev. A  
C1  
(1) COM  
(2) VB(U)  
(3) VCC(U)  
(4) IN(UH)  
(5) IN(UL)  
(6) NC  
R1  
R5  
(17) P  
VCC  
HIN  
VB  
HO  
VS  
LO  
(18) U, VS(U)  
LIN  
C3  
VDC  
C5  
R1  
C2  
C2  
C2  
COM  
(19) NU  
(20) NV  
(7) VB(V)  
(8) VCC(V)  
(9) IN(VH)  
(10) IN(VL)  
(11) NC  
VCC  
HIN  
VB  
HO  
VS  
LO  
(21) V, VS(V)  
M
LIN  
COM  
R1  
(12) VB(W)  
(13) VCC(W)  
(14) IN(WH)  
(15) IN(WL)  
(16) NC  
(22) NW  
VCC  
HIN  
VB  
HO  
VS  
LO  
(23) W, VS(W)  
LIN  
COM  
R4  
For 3-phase current sensing and protection  
15-V  
Supply  
C4  
R3  
Figure 8. Example of Application Circuit  
6
www.fairchildsemi.com  
FSB50550T Rev. A  
Detailed Package Outline Drawings  
Max 1.00  
0.60±0.10  
(1.80)  
(1.00)  
(1.165)  
15*1.778=26.67±0.30  
13.34±0.30  
13.34±0.30  
#1  
#16  
#17  
#23  
12.23±0.30  
13.13±0.30  
3.10±0.20  
29.00±0.20  
6.20±0.20  
2x3.90=7.80±0.30  
(2.275)  
4x3.90=15.60±0.30  
1.95±0.30  
0.60±0.10  
Max 1.00  
7
www.fairchildsemi.com  
FSB50550T Rev. A  
TRADEMARKS  
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
intended to be an exhaustive list of all such trademarks.  
®
ACEx™  
FACT Quiet Series™  
GlobalOptoisolator™  
GTO™  
OCX™  
OCXPro™  
OPTOLOGIC  
OPTOPLANAR™  
PACMAN™  
POP™  
Power247™  
PowerEdge™  
PowerSaver™  
SILENT SWITCHER  
SMART START™  
SPM™  
UniFET™  
UltraFET  
VCX™  
®
ActiveArray™  
Bottomless™  
Build it Now™  
CoolFET™  
CROSSVOLT™  
DOME™  
®
HiSeC™  
Stealth™  
Wire™  
2
I C™  
SuperFET™  
SuperSOT™-3  
SuperSOT™-6  
SuperSOT™-8  
SyncFET™  
TCM™  
TinyBoost™  
TinyBuck™  
i-Lo™  
ImpliedDisconnect™  
IntelliMAX™  
ISOPLANAR™  
LittleFET™  
MICROCOUPLER™  
MicroFET™  
MicroPak™  
MICROWIRE™  
MSX™  
MSXPro™  
EcoSPARK™  
2
E CMOS™  
®
EnSigna™  
FACT™  
PowerTrench  
®
QFET  
®
FAST  
QS™  
FASTr™  
FPS™  
FRFET™  
QT Optoelectronics™  
Quiet Series™  
RapidConfigure™  
RapidConnect™  
μSerDes™  
TinyPWM™  
TinyPower™  
®
TinyLogic  
TINYOPTO™  
TruTranslation™  
UHC™  
Across the board. Around the world.™  
The Power Franchise  
®
ScalarPump™  
Programmable Active Droop™  
DISCLAIMER  
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS  
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE  
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER  
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S  
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.  
LIFE SUPPORT POLICY  
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR  
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
As used herein:  
1. Life support devices or systems are devices or systems which,  
(a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in  
accordance with instructions for use provided in the labeling, can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or  
system whose failure to perform can be reasonably expected to  
cause the failure of the life support device or system, or to affect its  
safety or effectiveness.  
PRODUCT STATUS DEFINITIONS  
Definition of Terms  
Datasheet Identification  
Advance Information  
Product Status  
Definition  
Formative or In Design  
This datasheet contains the design specifications for  
product development. Specifications may change in  
any manner without notice.  
Preliminary  
First Production  
This datasheet contains preliminary data, and  
supplementary data will be published at a later date.  
Fairchild Semiconductor reserves the right to make  
changes at any time without notice to improve  
design.  
No Identification Needed  
Obsolete  
Full Production  
This datasheet contains final specifications. Fairchild  
Semiconductor reserves the right to make changes at  
any time without notice to improve design.  
Not In Production  
This datasheet contains specifications on a product  
that has been discontinued by Fairchild semiconductor.  
The datasheet is printed for reference information only.  
Rev. I20  

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