FSB50550UTD [FAIRCHILD]

Smart Power Module (SPM?); 智能功率模块( SPM® )
FSB50550UTD
型号: FSB50550UTD
厂家: FAIRCHILD SEMICONDUCTOR    FAIRCHILD SEMICONDUCTOR
描述:

Smart Power Module (SPM?)
智能功率模块( SPM® )

文件: 总9页 (文件大小:890K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
April 2010  
TM  
Motion-SPM  
FSB50550UTD  
Smart Power Module (SPM )  
®
Features  
General Description  
FSB50550UTD is a tiny smart power module (SPM®) based on  
FRFET technology as a compact inverter solution for small  
power motor drive applications such as fan motors and water  
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),  
500V RDS(on)=1.4W(max) 3-phase FRFET inverter including  
high voltage integrated circuit (HVIC)  
3 divided negative dc-link terminals for inverter current sens-  
ing applications  
and  
3
half-bridge HVICs for FRFET gate driving.  
FSB50550UTD provides low electromagnetic interference (EMI)  
characteristics with optimized switching speed. Moreover, since  
it employs FRFET as a power switch, it has much better  
ruggedness and larger safe operation area (SOA) than that of  
an IGBT-based power module or one-chip solution. The  
package is optimized for the thermal performance and  
compactness for the use in the built-in motor application and  
any other application where the assembly space is concerned.  
FSB50550UTD is the most solution for the compact inverter  
providing the energy efficiency, compactness, and low  
electromagnetic interference.  
HVIC for gate driving and undervoltage protection  
3/5V CMOS/TTL compatible, active-high interface  
Optimized for low electromagnetic interference  
Isolation voltage rating of 1500Vrms for 1min.  
Extended VB pin for PCB isolatio  
Embedded bootstrap diode in the package  
Absolute Maximum Ratings  
Symbol  
Parameter  
Conditions  
Rating  
Units  
DC Link Input Voltage,  
VPN  
500  
V
Drain-source Voltage of each FRFET  
Each FRFET Drain Current, Continuous  
Each FRFET Drain Current, Continuous  
Each FRFET Drain Current, Peak  
Maximum Power Dissipation  
Control Supply Voltage  
ID25  
ID80  
IDP  
TC = 25°C  
TC = 80°C  
2.0  
A
A
1.5  
TC = 25°C, PW < 100ms  
5
A
PD  
TC = 25°C, Each FRFET  
14.5  
20  
W
V
VCC  
VBS  
VIN  
TJ  
Applied between VCC and COM  
Applied between VB(U)-U, VB(V)-V, VB(W)-W  
Applied between IN and COM  
High-side Bias Voltage  
20  
V
Input Signal Voltage  
-0.3 ~ VCC+0.3  
-40 ~ 150  
V
Operating Junction Temperature  
°C  
TSTG  
RqJC  
Storage Temperature  
-40 ~ 125  
8.6  
°C  
Each FRFET under inverter operating con-  
dition (Note 1)  
Junction to Case Thermal Resistance  
°C/W  
60Hz, Sinusoidal, 1 minute, Connection  
pins to heatsink  
VISO  
Isolation Voltage  
1500  
Vrms  
©2010 Fairchild Semiconductor Corporation  
FSB50550UTD Rev. A  
1
www.fairchildsemi.com  
Pin Descriptions  
Pin Number  
Pin Name  
Pin Description  
1
2
COM  
VB(U)  
VCC(U)  
IN(UH)  
IN(UL)  
NC  
IC Common Supply Ground  
Bias Voltage for U Phase High Side FRFET Driving  
Bias Voltage for U Phase IC and Low Side FRFET Driving  
Signal Input for U Phase High-side  
3
4
5
Signal Input for U Phase Low-side  
6
No Connection  
7
VB(V)  
VCC(V)  
IN(VH)  
IN(VL)  
NC  
Bias Voltage for V Phase High Side FRFET Driving  
Bias Voltage for V Phase IC and Low Side FRFET Driving  
Signal Input for V Phase High-side  
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
Signal Input for V Phase Low-side  
No Connection  
VB(W)  
VCC(W)  
IN(WH)  
IN(WL)  
NC  
Bias Voltage for W Phase High Side FRFET Driving  
Bias Voltage for W Phase IC and Low Side FRFET Driving  
Signal Input for W Phase High-side  
Signal Input for W Phase Low-side  
No Connection  
P
Positive DC–Link Input  
U, VS(U)  
NU  
Output for U Phase & Bias Voltage Ground for High Side FRFET Driving  
Negative DC–Link Input for U Phase  
NV  
Negative DC–Link Input for V Phase  
V, VS(V)  
NW  
Output for V Phase & Bias Voltage Ground for High Side FRFET Driving  
Negative DC–Link Input for W Phase  
W, VS(W)  
Output for W Phase & Bias Voltage Ground for High Side FRFET Driving  
(1) COM  
(2) VB(U)  
(3) VCC(U)  
(4) IN(UH)  
(5) IN(UL)  
(17) P  
VCC  
HIN  
VB  
HO  
VS  
LO  
(18) U,Vs(u)  
LIN  
COM  
(6) NC  
(19) NU  
(20) NV  
(7) VB(V)  
(8) VCC(V)  
(9) IN(VH)  
(10) IN(VL)  
VCC  
HIN  
VB  
HO  
VS  
LO  
(21) V,Vs(v)  
LIN  
COM  
(11) NC  
(12) VB(W)  
(13) VCC(W)  
(14) IN(WH)  
(15) IN(WL)  
VCC  
HIN  
VB  
HO  
VS  
LO  
(22) NW  
(23) W,Vs(w)  
LIN  
COM  
(16) NC  
Note:  
®
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM . External connections should be made as indicated in Fig-  
ure 2 and 5.  
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)  
2
www.fairchildsemi.com  
FSB50550UTD Rev. A  
Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)  
Inverter Part (Each FRFET Unless Otherwise Specified)  
Symbol  
Parameter  
Conditions  
Min Typ Max Units  
Drain-Source Breakdown  
Voltage  
BVDSS  
VIN= 0V, ID = 250mA (Note 2)  
500  
-
0.53  
-
-
V
V
DBVDSS  
DTJ  
/
Breakdown Voltage Tem-  
perature Coefficient  
ID = 250mA, Referenced to 25°C  
VIN= 0V, VDS = 500V  
-
-
-
-
-
Zero Gate Voltage  
Drain Current  
IDSS  
RDS(on)  
VSD  
250  
1.4  
1.2  
mA  
W
Static Drain-Source  
On-Resistance  
VCC = VBS = 15V, VIN = 5V, ID = 1.2A  
VCC = VBS = 15V, VIN = 0V, ID = -1.2A  
1.0  
-
Drain-Source Diode  
Forward Voltage  
V
tON  
tOFF  
trr  
-
-
-
-
-
600  
500  
100  
60  
-
-
-
-
-
ns  
ns  
ns  
mJ  
mJ  
VPN = 300V, VCC = VBS = 15V, ID = 1.2A  
VIN = 0V « 5V  
Inductive load L=3mH  
Switching Times  
High- and low-side FRFET switching  
EON  
EOFF  
(Note 3)  
10  
VPN = 400V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS  
TJ = 150°C  
High- and low-side FRFET switching (Note 4)  
,
Reverse-bias Safe Oper-  
ating Area  
RBSOA  
Full Square  
Control Part (Each HVIC Unless Otherwise Specified)  
Symbol  
Parameter  
Conditions  
Min Typ Max Units  
IQCC  
Quiescent VCC Current  
VCC=15V, VIN=0V Applied between VCC and COM  
-
-
160  
mA  
Applied between VB(U)-U,  
VBS=15V, VIN=0V  
IQBS  
Quiescent VBS Current  
-
-
100  
mA  
VB(V)-V, VB(W)-W  
UVCCD  
UVCCR  
UVBSD  
UVBSR  
VIH  
VCC Undervoltage Protection Detection Level  
VCC Undervoltage Protection Reset Level  
VBS Undervoltage Protection Detection Level  
VBS Undervoltage Protection Reset Level  
7.4  
8.0  
7.4  
8.0  
2.9  
-
8.0  
8.9  
8.0  
8.9  
-
9.4  
9.8  
9.4  
9.8  
-
V
V
Low-side Undervoltage  
Protection (Figure 7)  
V
High-side Undervoltage  
Protection (Figure 8)  
V
ON Threshold Voltage  
OFF Threshold Voltage  
Logic High Level  
Applied between IN and COM  
Logic Low Level  
V
VIL  
-
0.8  
20  
2
V
IIH  
VIN = 5V  
-
10  
-
mA  
mA  
Input Bias Current  
Applied between IN and COM  
VIN = 0V  
IIL  
-
Bootstrap Diode Part  
Symbol  
Parameter  
Conditions  
Rating  
500  
Units  
VRRM  
IF  
Maixmum Repetitive Reverse Voltage  
V
A
Forward Current  
TC = 25°C  
TC = 25°C, Under 1ms Pulse Width  
0.5  
IFP  
TJ  
Forward Current (Peak)  
Operating Junction Temperature  
2
A
-40 ~ 150  
°C  
Note:  
1. For the measurement point of case temperature T , please refer to Figure 4 in page 5.  
C
®
2. BV  
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM . V should be sufficiently less than this value considering the  
PN  
DSS  
effect of the stray inductance so that V should not exceed BV  
in any case.  
DS  
DSS  
3.  
t
and t  
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the  
OFF  
ON  
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 5 for the switching time definition with the switching test circuit of Figure 6.  
4. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 6 for the RBSOA test cir-  
cuit that is same as the switching test circuit.  
3
www.fairchildsemi.com  
FSB50550UTD Rev. A  
Bootstrap Diode Part  
Symbol  
Parameter  
Conditions  
Min. Typ. Max. Units  
VF  
trr  
Forward Voltage  
IF = 0.1A, TC = 25°C  
-
-
2.0  
80  
-
-
V
Reverse Recovery Time  
IF = 0.1A, TC = 25°C  
ns  
Built in Bootstrap Diode VF-IF Characteristic  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
TC=25  
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
VF [V]  
Note:  
Built in bootstrap diode includes around 15resistance characteristic.  
Figure 2. Built in Bootstrap Diode Characteristics  
Package Marking & Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Packing Type  
Quantity  
FSB50550UTD  
FSB50550UTD  
SPM23-ED  
_
_
15  
4
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FSB50550UTD Rev. A  
Recommended Operating Conditions  
Value  
Symbol  
Parameter  
Conditions  
Units  
Min.  
-
Typ. Max.  
VPN  
VCC  
VBS  
Supply Voltage  
Applied between P and N  
300  
15  
15  
-
400  
16.5  
16.5  
VCC  
V
V
V
V
V
Control Supply Voltage  
High-side Bias Voltage  
Applied between VCC and COM  
13.5  
13.5  
3.0  
0
Applied between VB and output(U, V, W)  
VIN(ON) Input ON Threshold Voltage  
VIN(OFF) Input OFF Threshold Voltage  
Applied between IN and COM  
-
0.6  
Blanking Time for Preventing  
Arm-short  
tdead  
VCC=VBS=13.5 ~ 16.5V, TJ £ 150°C  
TJ £ 150°C  
1.0  
-
-
-
-
ms  
fPWM  
PWM Switching Frequency  
15  
kHz  
These values depend on PWM  
control algorithm  
C1  
15-V Line  
HIN  
LIN  
Output  
Note  
P
VDC  
0
0
Z
Both FRFET Off  
Low-side FRFET On  
High-side FRFET On  
Shoot-through  
VCC  
HIN  
VB  
HO  
VS  
LO  
Inverter  
Output  
R5  
0
1
1
0
0
VDC  
Micom  
LIN  
C3  
C5  
COM  
R3  
1
1
Forbidden  
Z
N
Open  
Open  
Same as (0, 0)  
One-Leg Diagram of SPM  
C2  
10mF  
* Example of bootstrap paramters:  
C1 = C2 = 1mF ceramic capacitor,  
Note:  
(1) It is recommended the bootstrap diode D to have soft and fast recovery characteristics with 500-V rating  
1
(2) Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.  
®
(3) RC coupling(R and C ) at each input (indicated as dotted lines) may be used to prevent improper input signal due to surge noise. Signal input of SPM is compatible with  
5
5
standard CMOS or LSTTL outptus.  
(4) Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C , C  
1
2
and C should have good high-frequency characteristics to absorb high-frequency ripple current.  
3
Figure 3. Recommended CPU Interface and Bootstrap Circuit with Parameters  
14.50mm  
3.80mm  
Case Temperature(Tc)  
Detecting Point  
MOSFET  
Note:  
®
®
Attach the thermocouple on top of the heatsink-side of SPM (between SPM and heatsink if applied) to get the correct temperature measurement.  
Figure 4. Case Temperature Measurement  
5
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FSB50550UTD Rev. A  
V
V
IN  
IN  
Irr  
120% of ID  
100% of ID  
VDS  
ID  
10% of ID  
ID  
VDS  
tON  
trr  
tOFF  
(a) Turn-on  
(b) Turn-off  
Figure 5. Switching Time Definition  
CBS  
VCC  
ID  
VCC  
HIN  
VB  
HO  
VS  
LO  
L
VDC  
LIN  
+
VDS  
-
COM  
One-leg Diagram of SPM  
Figure 6. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)  
Input Signal  
UV Protection  
RESET  
DETECTION  
RESET  
Status  
UVCCR  
Low-side Supply, VCC  
UVCCD  
MOSFET Current  
Figure 7. Undervoltage Protection (Low-side)  
Input Signal  
UV Protection  
Status  
RESET  
DETECTION  
RESET  
UVBSR  
High-side Supply, VBS  
UVBSD  
MOSFET Current  
Figure 8. Undervoltage Protection (High-side)  
6
www.fairchildsemi.com  
FSB50550UTD Rev. A  
C1  
(1) COM  
(2) VB(U)  
(3) VCC(U)  
(4) IN(UH)  
(5) IN(UL)  
(17) P  
VCC  
HIN  
VB  
HO  
VS  
LO  
R5  
(18) U,Vs(u)  
LIN  
C3  
VDC  
C5  
C2  
C2  
C2  
COM  
(6) NC  
(19) NU  
(20) NV  
(7) VB(V)  
(8) VCC(V)  
(9) IN(VH)  
(10) IN(VL)  
VCC  
HIN  
VB  
HO  
VS  
LO  
(21) V,Vs(v)  
M
LIN  
COM  
(11) NC  
(12) VB(W)  
(13) VCC(W)  
(14) IN(WH)  
(15) IN(WL)  
(22) NW  
VCC  
HIN  
VB  
HO  
VS  
LO  
(23) W,Vs(w)  
LIN  
COM  
(16) NC  
R4  
For 3-phase current sensing and protection  
15-V  
Supply  
C4  
R3  
Figure 9. Example of Application Circuit  
7
www.fairchildsemi.com  
FSB50550UTD Rev. A  
Detailed Package Outline Drawings  
Max 1.00  
0.60±0.10  
(1.80)  
(1.00)  
(1.165)  
15*1.778=26.67±0.30  
13.34±0.30  
13.34±0.30  
#1  
#16  
#17  
#23  
12.23±0.30  
13.13±0.30  
3.10±0.20  
29.00±0.20  
6.20±0.20  
2x3.90=7.80±0.30  
4x3.90=15.60±0.30  
1.95±0.30  
(2.275)  
0.60±0.10  
Max 1.00  
8
www.fairchildsemi.com  
FSB50550UTD Rev. A  
9
www.fairchildsemi.com  
FSB50550UTD Rev. A  

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