FSB50550A [FAIRCHILD]
Smart Power Module (SPM®); 智能功率模块（ SPM® ）
| 型号： | FSB50550A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Smart Power Module (SPM®) |
| 文件： | 总10页 (文件大小：1372K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2011
TM
Motion-SPM
FSB50550A
Smart Power Module (SPM )
®
Features
Applications
•
•
500V RDS(on)=1.4W(max) 3-phase FRFET inverter including
high voltage integrated circuit (HVIC)
• Three-phase inverter driver for small power ac motor drives
General Description
3 divided negative dc-link terminals for inverter current sens-
ing applications
FSB50550A is a tiny smart power module (SPM®) based on
FRFET technology as a compact inverter solution for small
power motor drive applications such as fan motors and water
suppliers. It is composed of 6 fast-recovery MOSFET (FRFET),
and 3 half-bridge HVICs for FRFET gate driving. FSB50550A
provides low electromagnetic interference (EMI) characteristics
with optimized switching speed. Moreover, since it employs
FRFET as a power switch, it has much better ruggedness and
larger safe operation area (SOA) than that of an IGBT-based
power module or one-chip solution. The package is optimized
for the thermal performance and compactness for the use in the
built-in motor application and any other application where the
assembly space is concerned. FSB50550A is the best solution
for the compact inverter providing the energy efficiency,
compactness, and low electromagnetic interference.
•
•
•
•
•
•
•
HVIC for gate driving and undervoltage protection
3/5V CMOS/TTL compatible, active-high interface
Optimized for low electromagnetic interference
Isolation voltage rating of 1500Vrms for 1min.
HVIC temperature sensing
Embedded bootstrap diode in the package
RoHS compliant
©2011 Fairchild Semiconductor Corporation
FSB50550A Rev. A
1
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Absolute Maximum Ratings
Inverter Part (Each FRFET Unless Otherwise Specified)
Symbol
Parameter
Conditions
Rating
Units
DC Link Input Voltage,
VPN
500
V
Drain-source Voltage of each FRFET
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Continuous
Each FRFET Drain Current, Peak
Each FRFET Drain Current, Rms
Maximum Power Dissipation
*ID25
*ID80
*IDP
TC = 25°C
TC = 80°C
2.0
1.5
5
A
A
TC = 25°C, PW < 100ms
A
*IDRMS
*PD
TC = 80°C, FPWM < 20KHz
TC = 25°C, For Each FRFET
1.1
14.5
Arms
W
Control Part (Each HVIC Unless Otherwise Specified)
Symbol
VCC
Parameter
Conditions
Rating
Units
Control Supply Voltage
Applied between VCC and COM
Applied between VB and VS
Applied between IN and COM
20
20
V
V
V
VBS
High-side Bias Voltage
Input Signal Voltage
VIN
-0.3 ~ VCC+0.3
Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified)
Symbol
Parameter
Conditions
Rating
Units
VRRMB
Maixmum Repetitive Reverse Voltage
V
A
A
500
0.5
* IFB
Forward Current
TC = 25°C
* IFPB
Forward Current (Peak)
TC = 25°C, Under 1ms Pulse Width
1.5
Thermal Resistance
Symbol
Parameter
Conditions
Rating
Units
Each FRFET under inverter operat-
ing condition (Note 1)
Junction to Case Thermal Resistance
°C/W
RqJC
8.6
Total System
Symbol
Parameter
Conditions
Rating
-40 ~ 150
-40 ~ 125
Units
°C
TJ
Operating Junction Temperature
Storage Temperature
TSTG
°C
60Hz, Sinusoidal, 1 minute, Con-
nection pins to heatsink
VISO
Isolation Voltage
1500
Vrms
Note:
1. For the measurement point of case temperature T , please refer to Figure 4.
C
2. Marking “ * “ is calculation value or design factor.
2
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FSB50550A Rev. A
Pin descriptions
Pin Number
Pin Name
Pin Description
1
2
COM
VB(U)
VCC(U)
IN(UH)
IN(UL)
N.C
IC Common Supply Ground
Bias Voltage for U Phase High Side FRFET Driving
Bias Voltage for U Phase IC and Low Side FRFET Driving
Signal Input for U Phase High-side
3
4
5
Signal Input for U Phase Low-side
6
N.C
7
VB(V)
VCC(V)
IN(VH)
IN(VL)
Vts
Bias Voltage for V Phase High Side FRFET Driving
Bias Voltage for V Phase IC and Low Side FRFET Driving
Signal Input for V Phase High-side
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Signal Input for V Phase Low-side
Output for HVIC temperature sensing
VB(W)
VCC(W)
IN(WH)
IN(WL)
N.C
Bias Voltage for W Phase High Side FRFET Driving
Bias Voltage for W Phase IC and Low Side FRFET Driving
Signal Input for W Phase High-side
Signal Input for W Phase Low-side
N.C
P
Positive DC–Link Input
U, VS(U)
NU
Output for U Phase & Bias Voltage Ground for High Side FRFET Driving
Negative DC–Link Input for U Phase
NV
Negative DC–Link Input for V Phase
V, VS(V)
NW
Output for V Phase & Bias Voltage Ground for High Side FRFET Driving
Negative DC–Link Input for W Phase
W, VS(W)
Output for W Phase & Bias Voltage Ground for High Side FRFET Driving
(1) COM
(2) VB(U)
(3) VCC(U)
(4) IN (UH)
(5) IN (UL)
(17) P
VCC
HIN
VB
HO
VS
LO
(18) U, VS(U)
LIN
COM
(6) N.C
(19) NU
(20) NV
(7) VB(V)
(8) VCC(V)
(9) IN (VH)
(10) IN (VL)
VCC
HIN
LIN
VB
HO
VS
LO
(21) V, VS(V)
COM
Vts
(11) Vts
(12) V B(W)
(13) VCC(W)
(14) IN (WH)
(15) IN (WL)
VCC
HIN
VB
HO
VS
LO
(22) NW
(23) W, VS(W)
LIN
COM
(16)
N.C
Note:
®
Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM . External connections should be made as indicated in Figure 3
Figure 1. Pin Configuration and Internal Block Diagram (Bottom View)
3
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FSB50550A Rev. A
Electrical Characteristics (TJ = 25°C, VCC=VBS=15V Unless Otherwise Specified)
Inverter Part (Each FRFET Unless Otherwise Specified)
Symbol
Parameter
Conditions
Min Typ Max Units
Drain-Source Breakdown
Voltage
BVDSS
VIN= 0V, ID = 1mA (Note 1)
500
-
-
-
V
mA
W
Zero Gate Voltage
Drain Current
IDSS
RDS(on)
VSD
VIN= 0V, VDS = 500V
-
-
-
1
Static Drain-Source
On-Resistance
VCC = VBS = 15V, VIN = 5V, ID = 1.2A
VCC = VBS = 15V, VIN = 0V, ID = -1.2A
1.0
-
1.4
1.2
Drain-Source Diode
Forward Voltage
V
tON
tOFF
trr
-
-
-
-
-
600
500
100
60
-
-
-
-
-
ns
ns
ns
mJ
mJ
VPN = 300V, VCC = VBS = 15V, ID = 1.2A
VIN = 0V « 5V, Inductive load L=3mH
High- and low-side FRFET switching
(Note 2)
Switching Times
EON
EOFF
10
VPN = 400V, VCC = VBS = 15V, ID = IDP, VDS=BVDSS
TJ = 150°C
High- and low-side FRFET switching (Note 3)
,
Reverse-bias Safe Oper-
ating Area
RBSOA
Full Square
Control Part (Each HVIC Unless Otherwise Specified)
Symbol
Parameter
Conditions
Min Typ Max Units
IQCC
Quiescent VCC Current
VCC=15V, VIN=0V Applied between VCC and COM
-
-
200
mA
Applied between VB(U)-U,
VBS=15V, VIN=0V
IQBS
Quiescent VBS Current
-
-
100
mA
VB(V)-V, VB(W)-W
UVCCD
UVCCR
UVBSD
UVBSR
VCC Undervoltage Protection Detection Level
VCC Undervoltage Protection Reset Level
VBS Undervoltage Protection Detection Level
VBS Undervoltage Protection Reset Level
7.4
8.0
7.4
8.0
8.0
8.9
8.0
8.9
9.4
9.8
9.4
9.8
V
V
V
V
Low-side Undervoltage
Protection (Figure 8)
High-side Undervoltage
Protection (Figure 9)
HVIC Temperature sens-
ing voltage output
Vts
mV
VCC=15V, THVIC=25°C(Note 4)
600
790
980
VIH
VIL
ON Threshold Voltage
OFF Threshold Voltage
Logic High Level
Applied between IN and COM
Logic Low Level
2.9
-
-
-
-
V
V
0.8
Bootstrap Diode Part (Each Bootstrap diode Unless Otherwise Specified)
Symbol
VFB
Parameter
Forward Voltage
Conditions
Min Typ Max Units
IF = 0.1A, TC = 25°C(Note 5)
IF = 0.1A, TC = 25°C
-
-
2.5
80
-
-
V
trrB
Reverse Recovery Time
ns
Note:
®
1. BV
is the absolute maximum voltage rating between drain and source terminal of each FRFET inside SPM . V should be sufficiently less than this value considering the
PN
DSS
effect of the stray inductance so that V should not exceed BV
in any case.
DS
DSS
2.
t
and t
include the propagation delay time of the internal drive IC. Listed values are measured at the laboratory test condition, and they can be different according to the
OFF
ON
field applcations due to the effect of different printed circuit boards and wirings. Please see Figure 6 for the switching time definition with the switching test circuit of Figure 7.
3. The peak current and voltage of each FRFET during the switching operation should be included in the safe operating area (SOA). Please see Figure 7 for the RBSOA test cir-
cuit that is same as the switching test circuit.
4. V is only for sensing temperature of module and cannot shutdown MOSFETs automatically.
ts
5. Built in bootstrap diode includes around 15Ω resistance characteristic. Please refer to Figure 2.
4
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FSB50550A Rev. A
Recommended Operating Condition
Value
Symbol
Parameter
Conditions
Units
Min.
-
Typ. Max.
VPN
VCC
VBS
Supply Voltage
Applied between P and N
300
15
15
-
400
16.5
16.5
VCC
V
V
V
V
V
Control Supply Voltage
High-side Bias Voltage
Applied between VCC and COM
Applied between VB and VS
13.5
13.5
3.0
0
VIN(ON) Input ON Threshold Voltage
VIN(OFF) Input OFF Threshold Voltage
Applied between IN and COM
-
0.6
Blanking Time for Preventing
Arm-short
tdead
VCC=VBS=13.5 ~ 16.5V, TJ £ 150°C
TJ £ 150°C
1.0
-
-
-
-
ms
fPWM
PWM Switching Frequency
15
kHz
Package Marking & Ordering Information
Device Marking
Device
Package
Reel Size
Packing Type
Quantity
FSB50550A
FSB50550A
SPM23-FD
-
-
15
Built in Bootstrap Diode VF-IF Characteristic
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
VF [V]
Tc=25°C
Figure 2. Built in Bootstrap Diode Characteristics(typ.)
5
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FSB50550A Rev. A
These values depend on PWM
control algorithm
15V
Line
*
Example circuit : V phase
C
1
VDC
P
V
HIN
0
LIN
0
Output
Note
VCC
HIN
LIN
VB
HO
VS
LO
Z
Both FRFET Off
Low side FRFET On
High side FRFET On
Shoot through
Inverter
Output
R
5
0
1
0
VDC
1
0
C3
C5
COM
Vts
1
1
Forbidden
Z
R
3
N
Open Open
Same as (0,0)
C
4
One Leg Diagram of SPM
C2
10mF
*
Example of bootstrap param:ters
C = C =1mF ceramic capacitor
1
2
Note:
1. Parameters for bootsrap circuit elements are dependent on PWM algorithm. For 15 kHz of switching frequency, typical example of parameters is shown above.
®
®
2. RC coupling(R and C ) and C at each input of SPM and Micom (indicated as dotted lines) may be used to prevent improper signal due to surge noise. Signal input of SPM
5
5
4
is compatible with standard CMOS or LSTTL outputs.
3. Bold lines should be short and thick in PCB pattern to have small stray inductance of circuit, which results in the reduction of surge voltage. Bypass capacitors such as C , C
1
2
and C should have good high-frequencycharacteristics to absorb high-frequency ripple current.
3
Figure 3. Recommended CPU Interface and Bootstrap Circuit with Parameters
Note:
®
®
Attach the thermocouple on top of the heatsink-side of SPM (between SPM and heatsink if applied) to get the correct temperature measurement.
Figure 4. Case Temperature Measurement
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
40
60
80
100
120
140
160
THVIC [deg]
Figure 5. Temperature profile of Vts(typ.)
6
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FSB50550A Rev. A
V
V
IN
IN
Irr
120% of ID
100% of ID
VDS
ID
10% of ID
ID
VDS
tON
trr
tOFF
(a) Turn-on
(b) Turn-off
Figure 6. Switching Time Definition
CBS
VCC
ID
VCC
HIN
LIN
VB
HO
VS
LO
L
VDC
+
VDS
-
COM
Vts
One-leg Diagram of SPM
Figure 7. Switching and RBSOA(Single-pulse) Test Circuit (Low-side)
Input Signal
UV Protection
RESET
DETECTION
RESET
Status
UVCCR
Low-side Supply, VCC
UVCCD
MOSFET Current
Figure 8. Undervoltage Protection (Low-side)
Input Signal
UV Protection
Status
RESET
DETECTION
RESET
UVBSR
High-side Supply, VBS
UVBSD
MOSFET Current
Figure 9. Undervoltage Protection (High-side)
7
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FSB50550A Rev. A
C1
(1) COM
(2)VB(U)
(17)P
(3)VCC(U)
VCC
HIN
VB
HO
VS
LO
R5
(4)IN
(UH)
(18)U,VS(U)
(5)IN
(UL)
VDC
C3
LIN
C5
C2
COM
(6)N.C
(7)VB(V)
(8)VCC(V)
(19)NU
(20)NV
VCC
HIN
LIN
VB
HO
VS
LO
(9)IN
(VH)
(21)V,VS(V)
(10)IN
(VL)
M
COM
VTS
(11)VTS
(12)VB(W)
(13)VCC(W)
(22)NW
VCC
HIN
VB
HO
VS
LO
(14)IN
(WH)
(23) W,VS(W)
(15)IN
(WL)
LIN
COM
(16)N.C
C4
R4
For current sensing and protection
15-V
Supply
C6
R3
Note:
1. About pin position, refer to Figure 2.
®
2. RC coupling(R and C , R and C ) and C at each input of SPM and Micom are useful to prevent improper input signal caused by surge noise.
5
5
4
6
4
3. The voltage drop across R affects the low side switching performance and the bootstrap characteristics since it is placed between COM and the source terminal of the low side
3
MOSFET. For this reason, the voltage drop across R should be less than 1V in the steady-state.
3
4. Ground wires and output terminals, should be thick and short in order to avoid surge voltage and malfunction of HVIC.
®
5. All the filter capacitors shoud be connected close to SPM , and they should have good characteristics for rejecting high-frequency ripple current.
Figure 10. Example of Application Circuit
8
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FSB50550A Rev. A
Detailed Package Outline Drawings
Dimension unit : [mm]
9
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FSB50550A Rev. A
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
FRFET®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Global Power ResourceSM
Green FPS™
Green FPS™ e-Series™
GTO™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
EcoSPARK®
™
EfficentMax™
Saving our world, 1mW /W /kW at a time™
EZSWITCH™ *
SmartMax™
SMART START™
SPM®
™
TriFault Detect™
mSerDes™
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
®
®
Fairchild®
Motion-SPM™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
OPTOLOGIC®
OPTOPLANAR®
®
FAST®
FastvCore™
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
FlashWriter®
FPS™
*
The Power Franchise®
F-PFS™
* EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NORTHE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I38
10
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FSB50550A Rev. A
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