FJYF2906 [FAIRCHILD]
PNP Multi-Chip General Purpose Amplifier; PNP多芯片通用放大器
| 型号： | FJYF2906 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | PNP Multi-Chip General Purpose Amplifier |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJYF2906
C1
PNP Multi-Chip General Purpose Amplifier
E1
•
•
•
Collector-Emitter Voltage: V
= 40V
CEO
C2
Amplifier and Switching Application
E2 is on pin 1
B1
B2
E2
(Pin1)
SOT-563F
Mark: S1
Absolute Maximum Ratings T =25°C unless otherwise noted
A
Symbol
Parameter
Value
40
40
5
150
Units
V
V
V
mA
°C
V
V
V
Collector-Emitter Voltage
CEO
CBO
EBO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
I
- Continuous
C
T , T
Operating and Storage Junction Temperature Range
-55 ~ +150
J
STG
Electrical Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristics
BV
BV
BV
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
I
= 1MA, I = 0
40
40
5
V
V
V
CEO
CBO
EBO
C
C
E
B
= 10µA, I = 0
E
= 10µA, I = 0
C
I
V
= 30V, V = 3V
50
NA
CEX
CE
BE
On Characteristics
h
DC Current Gain *
V
V
V
V
V
= 1V, I = 0.1MA
60
80
FE
CE
CE
CE
CE
CE
C
= 1V, I = 1mA
C
= 1V, I = 10mA
100
60
300
C
= 1V, I = 50mA
C
= 1V, I = 100mA
30
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I
= 10mA, I = 1mA
0.3
0.5
0.95
1
V
V
V
V
CE
C
C
B
I
= 50mA, I = 5mA
B
I
I
= 10mA, I = 1mA
0.65
250
BE
C
C
B
= 50mA, I = 5mA
B
Small Signal Characteristics
f
Current gain Bandwidth Product
V
= 20V, I = 10mA
MHz
T
CE
C
f = 100MHz
C
C
Output Capacitance
Input Capacitance
V
V
= 5V, I = 0, f = 1MHz
4.5
10
pF
pF
obo
ibo
CB
EB
E
= 0.5V, I = 0, f = 1MHz
C
* Pulse Test: Pulse Width
≤
300ms, Duty Cycle
≤
2.0%
NOTE: All voltage (V) and currents (A) are negative for PNP transistors.
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
Thermal Characteristics T =25°C unless otherwise noted
A
Symbol
Parameter
FJYF2906
Units
P
Total Device Dissipation
Derate above 25°C
150
mW
D
1.2
mW/°C
R
Thermal Resistance, Junction to Ambient
833
°C/W
JA
θ
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
Typical Characteristics
1000
-1
IC=10IB
VCE=-1V
Ta=1250C
Ta=250C
Ta=-400C
Ta=1250C
Ta=250C
100
-0.1
Ta=-400C
10
-0.01
1
10
100
1000
-1
-10
-100
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
-120
VCE=-1V
IC=10IB
-100
-80
-60
1
Ta=-400C
Ta=250C
Ta=1250C
Ta=1250C
250C
-400C
-40
-20
0
0.1
1
10
100
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
IE=0, f=1MHz
8
6
4
2
0
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
Package Dimensions
SOT-563F
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A1, September 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
FACT Quiet series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
GTO™
HiSeC™
I2C™
MSX™
QT Optoelectronics™ TinyLogic™
MSXPro™
OCX™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
UltraFET®
Across the board. Around the world.™
The Power Franchise™
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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