FJZ733 [FAIRCHILD]
Low Frequency Amplifier; 低频放大器型号: | FJZ733 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Low Frequency Amplifier |
文件: | 总5页 (文件大小:209K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FJZ733
Low Frequency Amplifier
3
•
•
Collector-Base Voltage : V
Complement to FJZ945
= -60V
CBO
2
1
SOT-623F
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-60
-50
-5
-150
100
Units
V
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
CBO
CEO
EBO
V
I
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
T
T
150
-55 ~ 150
J
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
-60
-50
- 5
Typ.
Max.
Units
V
V
V
nA
nA
BV
BV
BV
I = -100µA, I =0
CBO
CEO
EBO
C
E
I = -10mA. I =0
C
B
I
= -10µA. I =0
E
C
I
I
h
V
V
V
= --60V, I =0
-100
-100
700
CBO
CB
EB
CE
E
= -5V, I =0
EBO
C
DC Current Gain
= -6V, I = -1mA
40
FE
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
I = -100mA, I = -10mA
-0.18
-0.62
180
2.8
-0.3
-0.80
V
V
MHz
pF
CE
BE
C
B
V
= -6V, I = -1mA
-0.50
50
CE
CE
CB
CE
C
f
V
V
V
= -6V, I = -10mA
T
C
C
NF
= -10V, I = 0, f=1MHz
ob
E
Noise Figure
= -6V, I = -0.3mA
6.0
dB
C
f=1MHz, Rs=10kΩ
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Max.
1250
Units
°C/W
R
Thermal Resistance, Junction to Ambient
θJA
h
Classification & Marking
FE
Classification
R
40 ~ 80
A2
O
70 ~ 140
A3
Y
120 ~ 240
A1
G
L
h
200 ~ 400
A4
350 ~ 700
A5
FE
Marking
Marking
A1
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
Typical Characteristics
-50
Ta=1250C
Ta=250C
-45
VCE=-6V
IB = -400µA
-40
IB = -350µA
-35
IB = -300µA
Ta=-250C
-30
-25
-20
-15
-10
-5
100
IB = -250µA
IB = -200µA
IB = -150µA
IB = -100µA
IB = -50µA
0
10
-1
-10
-100
-1000
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
IC=10IB
IC=10IB
-1
-1
Ta=-250C
Ta=250C
Ta=1250C
Ta=1250C
Ta=250C
-0.1
Ta=-250C
-0.1
-1E-3
-0.01
-0.01
-0.1
-1
-1E-3
-0.01
-0.1
-1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
VCE=-6V
IE = 0
-100
f = 1MHz
10
-80
-60
1250C
250C
-250C
-40
-20
-0
1
-1
-10
-100
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
VBE[V], BASE-EMITTER VOLTAGE
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
Typical Characteristics (Continued)
1000
VCE = -6V
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
Package Dimensions
SOT-623F
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. B1, July 2003
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
FACT™
ImpliedDisconnect™ PACMAN™
SPM™
ActiveArray™
Bottomless™
CoolFET™
FACT Quiet Series™ ISOPLANAR™
POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
CROSSVOLT™ FRFET™
DOME™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
GTO™
HiSeC™
I2C™
MSX™
QT Optoelectronics™ TinyLogic®
MSXPro™
OCX™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
UltraFET®
Across the board. Around the world.™
The Power Franchise™
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I3
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