FJZ594JCTF [FAIRCHILD]
Transistor;
| 型号： | FJZ594JCTF |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总6页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FJZ594J
Capacitor Microphone Applications
3
•
•
•
Especially Suited for use in Audio, Telephone Capacitor Microphones
Excellent Voltage Characteristic
Excellent Transient Characteristic
2
1
SOT-623F
1. Drain 2. Source 3. Gate
Si N-channel Junction FET
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Ratings
-20
Units
V
V
Gate-Drain Voltage
Gate Current
GDO
I
I
10
mA
mA
mW
°C
G
Drain Current
1
D
P
Power Dissipation
Junction Temperature
Storage Temperature
100
D
T
T
150
J
-55 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Test Condition
Min.
Typ.
Max.
Units
BV
I = -100uA
-20
V
V
GDO
G
V
(off)
V
=5V, I =1µA
-0.6
-1.5
350
GS
DS
DS
DS
DS
DS
D
I
V
V
V
V
=5V, V =0
150
0.4
µA
mS
pF
pF
DSS
GS
ly l
Forward Transfer Admittance
Input Capacitance
=5V, V =0, f=1MHz
1.2
3.5
fs
GS
C
C
=5V, V =0, f=1MHz
GS
ISS
Output Capacitance
=5V, V =0, f=1MHz
0.65
RSS
GS
V
=4.5V, R =1kΩ, Cin=15pF, See the Specified Test Circuit
L
CC
G
Voltage Gain
V
=10mV, f=1KHz
=10mV, f=1KHz
-3
dB
dB
V
IN
∆G
Reduced Voltage Characteristic
V
V
-1.2
-3.5
-1
VV
Vf
IN
=4.5V → 1.5V
CC
∆G
Frequency Characteristic
Input Resistance
f=1KHz to 110Hz
f=1KHz
dB
MΩ
Ω
Z
Z
25
IN
O
Output Resistance
f=1KHz
700
THD
Total Harmonic Distortion
Output Noise Voltage
V
V
=10mV, f=1KHz
=0, A curve
1
%
IN
IN
V
-110
dB
NO
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Max
Units
°C/W
R
Thermal Resistance, Junction to Ambient
1250
θjA
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
Typical Characteristics
300
250
200
150
100
50
400.0µ
350.0µ
300.0µ
250.0µ
V
= 5V
IDDSSS = 200µA
200.0µ
VGS = 0 V
150.0µ
VGS = - 0.1V
100.0µ
50.0µ
0.0
VGS = - 0.2V
VGS = - 0.3V
0
-1.0
-0.8
-0.6
-0.4
-0.2
0.0
0
1
2
3
4
5
VDS [V], DRAIN-SOURCE VOLTAGE
VGS [V], GATE-SOURCE VOLTAGE
Figure 1. Static Characteristics
Figure 2. Transfer Characteristic
10
-
10
V
I
= 5V
DD=S 1µA
VDS = 5V
VGS = 0
f=1kHz
-1
1
0.1
-
0.1
0.1
1
0.1
1
IDSS [mA], DRAIN CURRENT
IDSS [mA], DRAIN CURRENT
Figure 3. Forward Transfer Admittance
Figure 4. Cut-Off Voltage
100
10
VGS = 0
f = 1MHz
VGS = 0
f = 1MHz
10
1
1
0.1
1
10
1
10
VDS [V], DRAIN-SOURCE VOLTAGE
VDS [V], DRAIN-SOURCE VOLTAGE
Figure 5. Input Capacitance
Figure 6. Reverse Transfer Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
Typical Characteristics (Continued)
140
120
100
80
-110
-112
-114
-116
-118
-120
VNO: V =4.5V
VIC=C 0, A curve
RL = 1kΩ
IDSS: VDS=5V
60
40
20
0
0
25
50
75
100
125
150
10
100
1000
Ta [oC], AMBIENT TEMPERATURE
IDSS [µA], DRAIN CURRENT
Figure 7. Power Derating
Figure 8. Output Noise Voltage
700
600
500
400
300
200
36
34
32
30
28
26
ZIN: V =4.5V
VCINC = 10mV
f = 1kHz
IDSS: VDS=5V
ZO: V =4.5V
VCINC= 10mV
f = 1kHz
IDSS: VDS=5V
10
100
1000
10
100
1000
IDSS [µA], DRAIN CURRENT
IDSS [µA], DRAIN CURRENT
Figure 9. Output Resistance
Figure 10. Input Resistance
4
2
100
10
1
THD: V = 4.5V
∆GVV: VCC = 4.5V ->1.5V
V
CC= 30mV
V
IN = 10mV
f = 1kHz
IDSS: VDS=5V
fI=N 1kHz
IDSS: VDS = 5V
0
-2
-4
-6
10
100
1000
100
1000
IDSS [µA], DRAIN CURRENT
IDSS [µA], DRAIN CURRENT
Figure 11. Total Hamonic Distortion vs. I
Figure 12. Reduced Voltage Characteristic
DSS
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
Typical Characteristics (Continued)
100
4
2
THD: V = 4.5V
f C=C1kHz
GV: V = 4.5V
VICNC= 10mV
RL = 1kΩ
IDSS: VDS = 5V
f=1kHz
IDSS: VDS = 5V
0
10
IDSS = 100µA
-2
-4
-6
-8
-10
IDSS = 200µA
IDSS = 400µA
1
0.1
0
40
80
120
160
200
240
10
100
1000
VIN [mV], INPUT VOLTAGE
IDSS [µA], DRAIN CURRENT
Figure 13. Total Harmonic Distortion vs. V
Figure 14. Voltage Gain
IN
L
R =1k
VCC=4.5V
VCC=1.5V
Cin =15p
+
33u
B
A
V
THD
OSC
VTVM
1k
Specified Test Circuit
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
Package Demensions
SOT-623F
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A, September 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
FAST®
FASTr™
FRFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
SMART START™
STAR*POWER™
Stealth™
VCX™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
POP™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
Power247™
PowerTrench®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER®
FACT™
FACT Quiet Series™
UHC™
UltraFET®
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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