FGD3440G2_F085 [FAIRCHILD]
Insulated Gate Bipolar Transistor, 26.9A I(C), 450V V(BR)CES, N-Channel;
| 型号： | FGD3440G2_F085 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Insulated Gate Bipolar Transistor, 26.9A I(C), 450V V(BR)CES, N-Channel 栅 |
| 文件： | 总8页 (文件大小：459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2014
FGB3440G2_F085 / FGD3440G2_F085
FGP3440G2_F085
®
EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT
Features
Applications
Automotive lgnition Coil Driver Circuits
SCIS Energy = 335mJ at TJ = 25oC
Logic Level Gate Drive
Qualified to AEC Q101
RoHS Compliant
Coil On Plug Applications
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AB
E
D²-Pak
C
G
COLLECTOR
G
E
R1
GATE
JEDEC TO-252AA
D-Pak
R2
G
EMITTER
COLLECTOR
(FLANGE)
E
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
Ratings
Units
V
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 Self Clamping Inductive Switching Energy (Note 1)
ESCIS150 Self Clamping Inductive Switching Energy (Note 2)
400
28
V
335
mJ
mJ
A
195
IC25
Collector Current Continuous, at VGE = 4.0V, TC = 25°C
Collector Current Continuous, at VGE = 4.0V, TC = 110°C
Gate to Emitter Voltage Continuous
26.9
25
IC110
VGEM
A
±10
V
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
166
W
PD
1.1
W/oC
oC
oC
oC
oC
kV
TJ
Operating Junction Temperature Range
-40 to +175
-40 to +175
300
TSTG
TL
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Max. Lead Temp. for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at100pF, 1500Ω
TPKG
ESD
260
4
@2014 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Package Marking and Ordering Information
Device Marking
FGB3440G2
FGD3440G2
FGP3440G2
Device
Package
Reel Size
330mm
330mm
Tube
Tape Width
Quantity
FGB3440G2_F085
FGD3440G2_F085
FGP3440G2_F085
TO-263AB
TO-252AA
TO-220AB
24mm
16mm
N/A
800
2500
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off State Characteristics
I
CE = 2mA, VGE = 0,
BVCER Collector to Emitter Breakdown Voltage RGE = 1KΩ,
TJ = -40 to 150oC
CE = 10mA, VGE = 0V,
BVCES Collector to Emitter Breakdown Voltage RGE = 0,
TJ = -40 to 150oC
370 400 430
390 420 450
V
I
V
V
ICE = -20mA, VGE = 0V,
TJ = 25°C
BVECS Emitter to Collector Breakdown Voltage
BVGES Gate to Emitter Breakdown Voltage
28
-
-
I
GES = ±2mA
±12 ±14
-
25
1
V
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
-
-
-
μA
mA
V
CE = 250V, RGE=1KΩ
ICER
IECS
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
-
-
-
1
V
EC = 24V,
mA
-
-
-
120
-
40
-
R1
R2
Series Gate Resistance
Ω
Ω
Gate to Emitter Resistance
10K
30K
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
I
CE = 6A, VGE = 4V,
TJ = 25oC
TJ = 150oC
TJ = 150oC
-
-
-
1. 1
1. 2
V
V
V
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 10A, VGE = 4.5V,
VCE(SAT) Collector to Emitter Saturation Voltage ICE = 15A, VGE = 4.5V,
L = 3.0 mHy, VGE = 5V
1.3 1.45
1.6 1.75
ESCIS
Self Clamped Inductive Switching
TJ = 25oC
-
-
335
mJ
RG = 1KΩ, (Note 1)
Notes:
1: Self Clamping Inductive Switching Energy(ESCIS25) of 335mJ is based on the test conditions that is starting
TJ=25 oC; L=3mHy, ISCIS=15A,VCC=100V during inductor charging and VCC=0V during the time in clamp
.
2: Self Clamping Inductive Switching Energy (ESCIS150) of 195mJ is based on the test conditions that is starting
TJ=150 oC; L=3mHy, ISCIS=11.4A,VCC=100V during inductor charging and VCC=0V during the time in clamp.
@2014 Fairchild Semiconductor Corporation
2
www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Dynamic Characteristics
ICE = 10A, VCE = 12V,
GE = 5V
QG(ON) Gate Charge
-
24
-
nC
V
TJ = 25oC
TJ = 150oC
1.3
1.7
2.2
1.8
-
VGE(TH) Gate to Emitter Threshold Voltage
ICE = 1mA, VCE = VGE,
VCE = 12V, ICE = 1 0 A
V
V
0.75 1.2
VGEP
Gate to Emitter Plateau Voltage
-
2 . 8
Switching Characteristics
td(ON)R Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1Ω
GE = 5V, RG = 1KΩ
TJ = 25oC,
-
-
-
-
1.0
2.0
5 . 3
2.3
4
7
μs
μs
μs
μs
V
trR
Current Rise Time-Resistive
td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 1mH,
1 5
15
VGE = 5V, RG = 1KΩ
I
tfL
Current Fall Time-Inductive
CE =6.5A, TJ = 25oC,
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
0.9 oC/W
@2014 Fairchild Semiconductor Corporation
3
www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Typical Performance Curves
100
30
20
10
0
RG = 1KΩ, VGE = 5V, VCE = 100V
RG = 1KΩ, VGE = 5V, VCE = 100V
TJ = 25oC
TJ = 25oC
10
TJ = 150oC
TJ = 150oC
SCIS Curves valid for V
clamp
Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
1
10
100
tCLP, TIME IN CLAMP (μS)
1000
0
3
6
9
12
15
L, INDUCTANCE (mHy)
Figure 1. Self Clamped Inductive Switching
Current vs. Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs. Inductance
1.20
1.50
ICE = 6A
ICE = 10A
VGE = 3.7V
1.45
VGE = 4.0V
VGE = 4.0V
1.15
1.40
1.35
1.30
1.25
1.20
1.15
1.10
VGE = 3.7V
1.10
VGE = 8V
VGE = 5V
VGE = 4.5V
VGE = 5V
1.05
VGE = 8V
VGE = 4.5V
1.00
-75 -50 -25
0
25 50 75 100 125 150 175
-75 -50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERTURE (oC)
TJ, JUNCTION TEMPERTURE (oC)
Figure 3. Collector to Emitter On-State Voltage
vs. Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs. Junction Temperature
30
30
VGE = 8.0V
VGE = 8.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
20
20
VGE = 3.7V
VGE = 3.7V
10
10
TJ = -40oC
TJ = 25oC
0
0
0
1
2
3
4
0
1
2
3
4
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs. Collector Current
@2014 Fairchild Semiconductor Corporation
4
www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
(Continued)
Typical Performance Curves
30
30
20
10
0
VGE = 8.0V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VCE = 5V
20
VGE = 3.7V
TJ = 175oC
10
0
TJ = 25oC
TJ = -40oC
3
TJ = 175oC
3 4
0
1
2
1
2
4
VGE, GATE TO EMITTER VOLTAGE (V)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage
vs. Collector Current
Figure 8. Transfer Characteristics
30
2.0
1.8
1.6
1.4
1.2
1.0
VGE = 4.0V
VCE = VGE
= 1mA
I
CE
20
10
0
25
50
75
100
125
150
175
-50 -25
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
TJ, JUNCTION TEMPERATURE(oC)
Figure 9. DC Collector Current vs. Case
Temperature
Figure 10. Threshold Voltage vs. Junction
Temperature
10000
12
Resistive tOFF
Inductive tOFF
ICE = 6.5A, VGE = 5V, RG = 1KΩ
VECS = 24V
10
8
1000
100
10
6
VCES = 300V
4
1
2
Resistive tON
VCES = 250V
0.1
-50 -25
0
25
0
25 50 75 100 125 150 175
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Leakage Current vs. Junction
Temperature
Figure 12. Switching Time vs. Junction
Temperature
@2014 Fairchild Semiconductor Corporation
5
www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
(Continued)
Typical Performance Curves
2000
1600
10
8
ICE = 10A, TJ = 25oC
f = 1MHz
VGE = 0V
VCE = 6V
CIES
1200
6
VCE = 12V
800
4
CRES
400
2
COES
0
0
5
10
15
20
25
0
10
20
30
40
50
60
70
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
Figure 13. Capacitance vs. Collector to Emitter
Voltage
Figure 14. Gate Charge
440
ICER = 10mA
420
TJ = -40oC
TJ = 25oC
400
380
TJ = 175oC
10
100
1000
6000
RG, SERIES GATE RESISTANCE (Ω)
Figure 15. Break down Voltage vs. Series Gate Resistance
2
1
DUTY CYCLE - DESCENDING ORDER
D = 0.50
0.2
P
DM
0.1
0.05
0.02
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
0.01
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJC
θJC C
0.01
10-5
10-4
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION(s)
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
@2014 Fairchild Semiconductor Corporation
6
www.fairchildsemi.com
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
Test Circuit and Waveforms
L
VCC
R
or
L
LOAD
C
C
RG
G
RG = 1KΩ
PULSE
GEN
+
-
G
DUT
E
VCC
DUT
5V
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
SCIS
C
V
CC
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
SCIS
V
G
CC
DUT
V
GE
E
t
P
I
0V
SCIS
0
0.01Ω
t
AV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
@2014 Fairchild Semiconductor Corporation
FGB3440G2_F085 / FGD3440G2_F085 / FGP3440G2_F085 Rev.C3
7
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
TinyCalc™
®
Green FPS™ e-Series™
Gmax™
GTO™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
TranSiC™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
EfficentMax™
ESBC™
®
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS
SyncFET™
Sync-Lock™
UHC
Fairchild Semiconductor
FACT Quiet Series™
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
仙童 ™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I68
相关型号：
FGD3N60UNDF
Using advanced NPT IGBT technology, Fairchild娉s the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明