FGD3N60LSD [FAIRCHILD]
IGBT; IGBT
| 型号： | FGD3N60LSD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | IGBT |
| 文件： | 总8页 (文件大小：848K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2005
FGD3N60LSD
IGBT
Features
Description
•
•
•
High Current Capability
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) provide
very low conduction losses. The device is designed for applica-
tions where very low On-Voltage Drop is a required feature.
Very Low Saturation Voltage : V
High Input Impedance
= 1.2 V @ I = 3A
CE(sat)
C
Applications
•
•
HID Lamp Applications
Piezo Fuel Injection Applications
C
C
G
D-PAK
E
G
E
Absolute Maximum Ratings
Symbol
CES
Description
FGD3N60LSD
Units
V
V
Collector-Emitter Voltage
600
V
Gate-Emitter Voltage
20
V
GES
I
Collector Current
@ T
=
25°C
6
A
C
C
Collector Current
@ T = 100°C
3
A
C
I
I
I
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Derating Factor
25
A
CM (1)
F
@ T = 100°C
3
25
A
C
FM
A
P
@ T
=
C
25°C
40
W
W/°C
°C
°C
°C
D
0.32
T
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
250
J
T
stg
T
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
L
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
3.1
Units
R
R
Thermal Resistance, Junction-to-Case
--
°C/W
θJC
(IGBT)
Thermal Resistance, Junction-to-Ambient (PCB Mount)
--
100
°C/W
θJA
(2)
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2005 Fairchild Semiconductor Corporation
FGD3N60LSD Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
FGD3N60LSDTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
FGD3N60LSD
FGD3N60LSD
FGD3N60LSDTF
D-PAK
380mm
16mm
2000
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BV
Collector-Emitter Breakdown Voltage
V
V
= 0V, I = 250uA
600
--
--
--
--
V
CES
GE
GE
C
∆B
/
Temperature Coefficient of Breakdown]
Voltage
= 0V, I = 1mA
0.6
V/°C
VCES
J
C
∆T
I
I
Collector Cut-Off Current
G-E Leakage Current
V
V
= V
= V
, V = 0V
--
--
--
--
250
uA
nA
CES
GES
CE
GE
CES
GE
, V = 0V
± 100
GES
CE
On Characteristics
V
V
G-E Threshold Voltage
I
I
I
= 3mA, V = V
GE
2.5
--
3.2
1.2
1.8
5.0
1.5
--
V
V
V
GE(th)
C
C
C
CE
Collector to Emitter
Saturation Voltage
= 3A
= 6A
,
V
V
= 10V
= 10V
CE(sat)
GE
GE
,
--
Dynamic Characteristics
C
C
C
Input Capacitance
V
= 25V V = 0V,
--
--
--
185
20
--
--
--
pF
pF
pF
ies
CE
,
GE
f = 1MHz
Output Capacitance
oes
res
Reverse Transfer Capacitance
5.5
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Rise Time
V
= 480 V, I = 3A,
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
40
40
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
d(on)
CC
G
C
R
= 470Ω, V = 10V,
GE
r
Inductive Load, T = 25°C
C
Turn-Off Delay Time
Fall Time
600
600
250
1.00
1.25
40
ns
d(off)
f
ns
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
uJ
on
off
mJ
mJ
ns
ts
t
t
t
t
V
R
= 480 V, I = 3A,
CC C
d(on)
r
= 470Ω, V = 10V,
G
GE
45
ns
Inductive Load, T = 125°C
C
Turn-Off Delay Time
Fall Time
620
800
300
1.9
ns
d(off)
f
ns
E
E
E
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
uJ
on
off
ts
mJ
mJ
nC
nC
nC
nH
2.2
Q
Q
Q
V
V
= 480 V, I = 3A,
12.5
2.8
g
CE
GE
C
= 10V
ge
gc
4.9
L
Measured 5mm from PKG
7.5
e
2
www.fairchildsemi.com
FGD3N60LSD Rev. A
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
V
Diode Forward Voltage
I = 3A
T
T
T
T
T
T
T
T
=
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
25°C
= 100°C
--
--
--
--
--
--
--
--
1.5
1.55
234
--
1.9
V
ns
A
FM
F
C
C
C
C
C
C
C
C
--
t
I
Diode Reverse Recovery Time
I = 3A,
=
--
rr
F
di/dt = 100A/us
--
VR = 200V
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
=
2.64
--
--
rr
--
Q
=
309
--
--
nC
rr
--
3
www.fairchildsemi.com
FGD3N60LSD Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
30
30
Common Emitter
20V
15V
Common Emitter
TC = 125°C
TC
= 25°C
24
18
12
6
20V
24
18
12
6
15V
10V
10V
VGE = 8V
VGE = 8V
0
0
2
4
6
8
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
10
10
Common Emitter
VCE = 20V
Common Emitter
V
GE = 10V
TC
TC = 125
=
25
°
C
C
TC
TC = 125
=
25
°
C
C
8
6
4
2
0
8
6
4
2
0
°
°
0.1
1
10
1
10
Gate-Emitter Voltage, VGE[V]
Collector-Emitter Voltage, VCE[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Capacitance Characteristics
3
600
Common Emitter
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
VGE = 10V
°
C
500
400
300
200
100
0
2
Cies
IC = 6A
Coes
Cres
IC = 3A
IC = 1.5A
1
0
0
30
60
90
120
150
1
10
Case Temperature, TC [°C]
Collector - Emitter Voltage, VCE [V]
4
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FGD3N60LSD Rev. A
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
12
1000
Common Emitter
Com m on Em itter
RL = 160
Ω
VCC = 480V, VGE = 10V
Vcc = 480V
10
8
IC = 3A
TC = 25
°
C
TC
= 25°C
TC = 125
°
C
6
Ton
Tr
100
4
2
0
10
0
2
4
6
8
10
12
200
400
600
800 1000
Gate Charge, Qg [nC]
Gate Resistance, RG [Ω ]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
10000
10000
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC
TC = 125
= 25°C
Eoff
°
C
1000
Toff
Tf
1000
Eon
100
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC
= 25°C
TC = 125
°
C
100
10
200
400
600
800 1000
200
400
600
800 1000
Gate Resistance, RG [Ω]
Gate Resistance, RG
[Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, VGE = 10V
RG = 470
TC 25
TC = 125
Ω
100
1000
=
°
C
C
Toff
Tf
°
Ton
Tr
Common Emitter
Vcc = 480 V, VGE = 10V
RG = 470
TC = 25
C = 125
Ω
°
C
°C
T
10
2
3
4
100
Collector Current, IC [A]
2
3
4
Collector Current, IC [A]
5
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FGD3N60LSD Rev. A
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
100
Tc = 25
°C
Common Emitter
Vcc = 480 V, VGE = 10V
Tc = 100
°
C
RG = 470
TC = 25
TC = 125
Ω
°
C
°C
10
1
Eoff
Eon
1000
100
0.1
0
1
2
3
4
2
3
4
Collector Current, IC [A]
Forward Voltage Drop, VF [V]
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
100
2.8
Ic MAX (Pulsed)
2.4
50µs
10
100µs
Ic MAX (Continuous)
IF=6 A
1ms
2.0
1
DC Operation
1.6
IF=3 A
Single Nonrepetitive
0.1
Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
IF=1.5 A
1.2
0.01
25
50
75
100
125
0.1
1
10
100
1000
Junction Temperature, Tj [°C]
Collector - Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
1
0.5
0.2
0.1
0.05
0.02
Pdm
0.1
single pulse
t1
0.01
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
× Zthjc + TC
0.01
1E -5
1E-4
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
6
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FGD3N60LSD Rev. A
Mechanical Dimensions
D-PAK
6.60 0.20
5.34 0.30
(4.34)
2.30 0.10
0.50 0.10
(0.50)
(0.50)
MAX0.96
0.76 0.10
0.50 0.10
1.02 0.20
2.30 0.20
2.30TYP
2.30TYP
[2.30 0.20]
[2.30 0.20]
6.60 0.20
(5.34)
(5.04)
(1.50)
(2XR0.25)
0.76 0.10
Dimensions in Millimeters
7
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FGD3N60LSD Rev. A
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life support device
or system whose failure to perform can be reasonably expected
to cause the failure of the life support device or system, or to
affect its safety or effectiveness.
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support
or sustain life, or (c) whose failure to perform when properly used
in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
8
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FGD3N60LSD Rev. A
相关型号：
FGD3N60UNDF
Using advanced NPT IGBT technology, Fairchild娉s the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.
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