FGD3N60LSDTM-T [ONSEMI]
IGBT，600V，3A，1.2V，DPAK，平面;
| 型号： | FGD3N60LSDTM-T |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，3A，1.2V，DPAK，平面 双极性晶体管 |
| 文件： | 总9页 (文件大小：1101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductor
Is Now
To learn more about onsemi™, please visit our website at
www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
FGD3N60LSD
IGBT
Description
ON Semiconductor's Insulated Gate Bipolar Transistors
Features
(IGBTs)
provide very low conduction losses. The device is
•
•
•
High Current Capability
designed for applica-tions where very low On-Voltage Drop is
a required feature.
Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
High Input Impedance
Applications
•
HID Lamp Applications
•
Piezo Fuel Injection Applications
C
C
G
D-PAK
E
G
E
Absolute Maximum Ratings
Symbol
Description
FGD3N60LSD
Units
VCES
VGES
IC
Collector-Emitter Voltage
Gate-Emitter Voltage
600
V
V
± 25
Collector Current
@ TC
=
25°C
6
A
Collector Current
@ TC = 100°C
3
A
ICM (1)
I F
Pulsed Collector Current
Diode Continous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Derating Factor
25
A
(1)
@ TC = 100°C
3
25
A
I FM
PD
A
@ TC
=
25°C
40
W
W/°C
°C
°C
°C
0.32
TJ
Operating Junction Temperature
Storage Temperature Range
-55 to +150
-55 to +150
250
Tstg
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
3.1
Units
RθJC
Thermal Resistance, Junction-to-Case
--
--
°C/W
°C/W
(IGBT)
RθJA
Thermal Resistance, Junction-to-Ambient (PCB Mount) (2)
100
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FGD3N60LSD/D
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGD3N60LSD
FGD3N60LSDTM
D-PAK
380mm
16mm
2500
Electrical Characteristics of the IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
600
--
--
--
--
V
∆BVCES
∆TJ
/
Temperature Coefficient of Breakdown
Voltage
0.6
V/°C
ICES
IGES
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
--
--
--
--
250
uA
nA
± 100
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 3mA, VCE = VGE
IC = 3A, VGE = 10V
2.5
--
3.2
1.2
1.8
5.0
1.5
--
V
V
V
VCE(sat)
Collector to Emitter
Saturation Voltage
I
C = 6A,
VGE = 10V
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
VCE = 25V VGE = 0V,
f = 1MHz
--
--
--
185
20
--
--
--
pF
pF
pF
,
Output Capacitance
Reverse Transfer Capacitance
5.5
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
Inductive Load, TC = 25°C
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
40
40
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
ns
ns
Rise Time
Turn-Off Delay Time
Fall Time
600
600
250
1.00
1.25
40
ns
ns
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
uJ
mJ
mJ
ns
VCC = 480 V, IC = 3A,
RG = 470Ω, VGE = 10V,
45
ns
Inductive Load, TC = 125°C
td(off)
tf
Turn-Off Delay Time
Fall Time
620
800
300
1.9
ns
ns
Eon
Eoff
Ets
Qg
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
uJ
mJ
mJ
nC
nC
nC
nH
2.2
VCE = 480 V, IC = 3A,
VGE = 10V
12.5
2.8
Qge
Qgc
Le
4.9
Measured 5mm from PKG
7.5
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2
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
VFM
Diode Forward Voltage
IF = 3A
TC
TC = 100°C
TC 25°C
TC = 100°C
TC 25°C
C = 100°C
TC 25°C
TC = 100°C
=
25°C
--
--
--
--
--
--
--
--
1.5
1.55
234
--
1.9
--
V
ns
A
trr
Diode Reverse Recovery Time
IF = 3A,
di/dt = 100A/us
VR = 200V
=
--
--
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
=
2.64
--
--
T
--
Qrr
=
309
--
--
nC
--
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3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 2. Typical Output Characteristics
30
30
Common Emitter
20V
15V
Common Emitter
TC = 125°C
TC
= 25°C
24
18
12
6
20V
24
15V
10V
18
10V
VGE = 8V
VGE = 8V
12
6
0
0
2
4
6
8
0
0
2
4
6
8
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Figure 3. Typical Output Characteristics
Figure 4. Transfer Characteristics
10
10
Common Emitter
VCE = 20V
Common Emitter
VGE = 10V
TC
= 25°C
TC
= 25°C
8
6
4
2
0
8
6
4
2
0
TC = 125°C
TC = 125°C
0.1
1
10
1
10
Gate-Emitter Voltage, VGE[V]
Collector-Emitter Voltage, VCE[V]
Figure 5. Saturation Voltage vs. Case
Figure 6. Capacitance Characteristics
3
600
Common Emitter
Common Emitter
VGE = 10V
VGE = 0V, f = 1MHz
TC = 25°C
500
400
300
200
100
0
2
Cies
IC = 6A
Coes
Cres
IC = 3A
IC = 1.5A
1
0
0
30
60
90
120
150
1
10
Case Temperature, TC [°C]
Collector - Emitter Voltage, VCE [V]
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4
Typical Performance Characteristics (Continued)
Figure 7. Gate Charge
Figure 8. Turn-On Characteristics vs. Gate
Resistance
12
1000
Common Emitter
RL = 160Ω
Com m on Em itter
VCC = 480V, VGE = 10V
Vcc = 480V
TC = 25°C
10
8
IC = 3A
TC
= 25°C
TC = 125°C
6
Ton
Tr
100
4
2
0
10
0
2
4
6
8
10
12
200
400
600
800 1000
Gate Charge, Qg [nC]
Gate Resistance, RG [Ω ]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
10000
10000
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC
= 25°C
Eoff
TC = 125°C
1000
Toff
Tf
1000
Eon
100
Common Emitter
VCC = 480V, VGE = 10V
IC = 3A
TC
= 25°C
TC = 125°C
100
10
200
400
600
800 1000
200
400
600
800 1000
Gate Resistance, RG [Ω]
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
Vcc = 480V, VGE = 10V
R
G = 470Ω
25°C
100
TC
=
1000
Toff
Tf
TC = 125°C
Ton
Tr
Common Emitter
Vcc = 480 V, VGE = 10V
G = 470Ω
TC = 25°C
R
T
C = 125°C
10
2
3
4
100
Collector Current, IC [A]
2
3
4
Collector Current, IC [A]
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5
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Forward Characteristics
100
Tc = 25°C
Common Emitter
Vcc = 480 V, VGE = 10V
Tc = 100°C
RG = 470Ω
TC = 25°C
TC = 125°C
10
Eoff
Eon
1000
1
100
0.1
0
1
2
3
4
2
3
4
Collector Current, IC [A]
Forward Voltage Drop, VF [V]
Figure 15. Forward Voltage Drop Vs Tj
Figure 16. SOA Characteristics
100
2.8
Ic MAX (Pulsed)
2.4
50µs
10
100µs
Ic MAX (Continuous)
IF=6 A
1ms
2.0
1
DC Operation
1.6
IF=3 A
Single Nonrepetitive
0.1
Pulse Tc = 25°C
Curves must be derated
linearly with increase
in temperature
IF=1.5 A
1.2
0.01
25
50
75
100
125
0.1
1
10
100
1000
Junction Temperature, Tj [°C]
Collector - Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
10
0.5
1
0.2
0.1
0.05
0.02
0.01
Pdm
0.1
single pulse
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
1
× Zthjc + T
C
0.01
1E-5
1E-4
1E-3
0.01
0.1
10
Rectangular Pulse Duration [sec]
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6
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
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7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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www.onsemi.com
❖
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