FGA50N100BNTD [FAIRCHILD]
1000V, 50A NPT-Trench IGBT CO-PAK; 1000V ， 50A NPT- IGBT沟槽CO- PAK
| 型号： | FGA50N100BNTD |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 1000V, 50A NPT-Trench IGBT CO-PAK |
| 文件： | 总7页 (文件大小：707K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2006
FGA50N100BNTD
1000V, 50A NPT-Trench IGBT CO-PAK
General Description
Features
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
•
•
•
•
High Speed Switching
Low Saturation Voltage: VCE(sat) = 2.5V @ IC = 60A
High Input Impedance
Built-in Fast Recovery Diode
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
C
E
G
TO-3P
G
C
E
Absolute Maximum Ratings
T = 25°C unless otherwise noted
C
Symbol
VCES
VGES
Description
Collector-Emitter Voltage
FGA50N100BNTD
Units
V
1000
Gate-Emitter Voltage
± 25
V
Collector Current
@ TC
@ TC = 100°C
=
25°C
50
35
A
IC
ICM (1)
IF
Collector Current
A
Pulsed Collector Current
100
A
Diode Continuous Forward Current
M a x i m u m P o w e r D i s s i p a t i o n
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ TC = 100°C
@ TC
@ TC = 100°C
15
A
PD
=
25°C
156
W
W
°C
°C
63
TJ
Tstg
-55 to +150
-55 to +150
TL
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Typ.
--
Max.
Units
°C/W
°C/W
°C/W
0.8
2.4
25
--
Thermal Resistance, Junction-to-Ambient
--
©2006 Fairchild Semiconductor Corporation
FGA50N100BNTD Rev. A
www.fairchildsemi.com
Package Marking and Ordering Information
Max Qty
per Box
-
Packaging Type Qty per Tube
Device Marking
Device
Package
FGA50N100BNTD
FGA50N100BNTDTU
TO-3P
Rail / Tube
30ea
Electrical Characteristics of IGBT
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
VGE = 0V, IC = 1mA
BVCES
Collector Emitter Breakdown Voltage
1000
--
--
--
--
--
V
VCE = 1000V, VGE = 0V
VGE = ± 25, VCE = 0V
ICES
Collector Cut-Off Current
1.0
mA
IGES
G-E Leakage Current
--
± 500
nA
On Characteristics
VGE(th)
G-E Threshold Voltage
IC = 60mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 60A, VGE = 15V
4.0
--
5.0
1.5
2.5
7.0
1.8
2.9
V
V
V
Collector to Emitter
Saturation Voltage
VCE(sat)
--
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
--
--
--
6000
260
--
--
--
pF
pF
pF
VCE=10V VGE = 0V,
f = 1MHz
,
Output Capacitance
Reverse Transfer Capacitance
200
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
--
--
--
--
--
--
--
140
320
630
130
275
45
--
--
ns
ns
VCC = 600 V, IC = 60A,
RG = 51Ω, VGE=15V,
Resistive Load, TC = 25°C
Rise Time
Turn-Off Delay Time
Fall Time
--
ns
250
350
--
ns
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
nC
nC
nC
VCE = 600 V, IC = 60A,
VGE = 15V , , TC = 25°C
95
--
Electrical Characteristics of DIODE
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
--
Typ.
1.2
Max.
1.7
2.1
1.5
2
Units
V
IF = 15A
IF = 60A
VFM
Diode Forward Voltage
--
1.8
V
trr
Diode Reverse Recovery Time
Instantaneous Reverse Current
IF = 60A di/dt = 20 A/us
VRRM = 1000V
1.2
us
IR
--
0.05
uA
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FGA50N100BNTD Rev. A
100
80
60
40
20
0
90
80
70
60
50
40
30
20
10
0
20V
15V
10V
9V
Common Emitter
C = 25oC
Common Emitter
GE = 15V
Tc = 25oC
Tc = 125oC
8V
T
V
7V
VGE = 6V
0
1
2
3
4
5
0
1
2
3
4
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
10
Common Emitter
Common Emitter
VGE=15V
TC= - 40 O
C
8
6
4
2
0
3
2
80A
60A
30A
30A
60A
80A
IC=10A
IC=10A
1
-50
0
50
100
150
4
8
12
16
20
Case Temperature, TC [oC]
Gate-Emitter Voltage, VGE [V]
Fig 3. Saturation Voltage vs. Case
Fig 4. Saturation Voltage vs. V
GE
Temperature at Varient Current Level
10
8
10
8
Common Emitter
TC = 125oC
Common Emitter
T
C = 25oC
30A
6
6
60A
30A
60A
80A
80A
4
4
2
2
IC = 10A
IC = 10A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
Fig 5. Saturation Voltage vs. V
Fig 6. Saturation Voltage vs. V
GE
GE
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FGA50N100BNTD Rev. A
10000
1000
100
10000
1000
100
Cies
VCC=600V, IC=60A
VGE= +/-15V
TC=25 oC
Tdoff
Tr
Tdon
Tf
Coes
Cres
Common Emitter
VGE = 0V, f = 1MHz
TC = 25 o
C
10
0
5
10
15
20
25
30
0
50
100
150
200
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG [Ω]
Fig 7. Capacitance Characteristics
Fig 8. Switching Characteristics vs.
Gate Resistance
20
Common Emitter
1000
VCC=600V, RL=10 Ω
VCC=600V, Rg=51
VGE=+/-15V, TC=25 oC
Ω
TC=25 o
C
15
10
5
Tdoff
Tf
Tr
100
Tdon
0
0
50
100
150
200
250
300
10
20
30
40
50
60
Gate Charge, Qg [nC]
Collector Current, IC [A]
Fig 9. Switching Characteristics vs.
Collector Current
Fig 10. Gate Charge Characteristics
1
0.5
Ic MAX (Pulsed)
100
Ic MAX (Continuous)
0.2
50µs
100µs
0.1
0.1
10
1
1ms
0.05
0.02
DC Operation
single pulse
0.01
0.01
1E-3
Single Nonrepetitive
0.1
0.01
Pulse Tc = 25oC
Curves must be derated
linearly with increase
in temperature
1E-5
1E-4
1E-3
0.01
0.1
1
10
0.1
1
10
100
1000
Rectangular Pulse Duration [sec]
Collector - Emitter Voltage, VCE [V]
Fig 11. SOA Characteristics
Fig 12. Transient Thermal Impedance of IGBT
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FGA50N100BNTD Rev. A
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
60
40
20
0
100
10
1
IF= 60 A
TC= 25 o
C
TC = 100 oC
trr
TC = 25oC
Irr
0.1
0.0
0.5
1.0
1.5
2.0
2.5
0
40
80
120
di/dt [A/us]
160
200
240
Forward Voltage, VFM [V]
Fig 13. Forward Characteristics
Fig 14. Reverse Recovery Characteristics
vs. di/dt
di/dt=-20A/us
TC=25 oC
1.2
1.0
0.8
0.6
0.4
12
10
8
1000
100
TC = 150 oC
trr
10
1
Irr
6
0.1
TC= 25 oC
0.01
4
1E-3
10
20
30
40
50
60
0
300
600
900
Forward Current, IF [A]
Reverse Voltage, VR [V]
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
Fig 16. Reverse Current vs. Reverse Voltage
250
TC = 25 oC
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, VR [V]
Fig 17. Junction capacitance
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FGA50N100BNTD Rev. A
Package Dimension
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
9.60 ±0.20
+0.15
ø3.20 ±0.10
1.50
–0.05
2.00 ±0.20
3.00 ±0.20
1.00 ±0.20
1.40 ±0.20
+0.15
–0.05
0.60
5.45TYP
5.45TYP
[5.45 ±0.30
]
[5.45 ±0.30]
Dimensions in Millimeters
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FGA50N100BNTD Rev. A
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I17
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FGA50N100BNTD Rev. A
相关型号：
FGA50N100BNTDTU
Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES, N-Channel, TO-3P, 3 PIN
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