FDZ5047N [FAIRCHILD]
30V N-Channel Logic Level PowerTrench BGA MOSFET; 30V N沟道逻辑电平的PowerTrench MOSFET BGA
| 型号： | FDZ5047N |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel Logic Level PowerTrench BGA MOSFET |
| 文件： | 总6页 (文件大小：212K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
January 2004
FDZ5047N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s 30V PowerTrench process with
state of the art BGA packaging, the FDZ5047N
• 22 A, 30 V.
RDS(ON) = 2.9 mΩ @ VGS = 10 V
RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
minimizes both PCB space and RDS(ON)
.
This BGA
MOSFET embodies
a breakthrough in packaging
• Occupies only 27.5 mm2 of PCB area:
1/5 of the area of a TO-220 package
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON)
.
• Ultra-thin package: less than 0.90 mm height when
mounted to PCB
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications resulting in DC/DC power supply
designs with higher overall efficiency.
• Outstanding thermal transfer characteristics
• Ultra-low gate charge x RDS(ON) product
Applications
• DC/DC converters
• Solenoid drive
D
D
D
D
D
D
D
D
S
S
S
D
S
S
S
S
S
D
S
S
S
S
S
D
S
S
S
S
S
D
D
D
D
D
D
Pin 1
G
S
G
Pin 1
S
Bottom
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±20
22
75
(Note 1a)
A
PD
TJ, TSTG
2.8
–50 to +150
W
°C
Total Power Dissipation @ TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
(Note 1)
44
2.7
0.3
RθJA
RθJB
RθJC
°C/W
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
5047N
FDZ5047N
13’’
12mm
3000 units
FDZ5047N Rev D4 (W)
2004 Fairchild Semiconductor Corporation.
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 µA
Breakdown Voltage Temperature
24
∆BVDSS
∆TJ
ID = 250 µA, Referenced to 25°C
mV/°C
Coefficient
IDSS
Zero Gate Voltage Drain Current
Gate–Body Forward Leakage
Gate–Body Reverse Leakage
VDS = 24 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
1
µA
nA
nA
IGSSF
IGSSR
100
–100
VGS = –20 V, VDS = 0 V
On Characteristics
(Note 2)
Gate Threshold Voltage
VGS(th)
1
1.3
–5
3
V
VDS = VGS
ID = 250 µA, Referenced to 25°C
,
ID = 250 µA
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
mV/°C
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
ID = 22 A
ID = 18 A
2.3
3.2
3.4
2.9
4.5
5.0
mΩ
VGS = 10 V, ID = 22 A, TA=125°C
gFS
Forward Transconductance
VDS = 10 V,
ID = 22 A
100
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
V
DS = 15 V,
VGS = 0 V,
4993
1144
498
pF
pF
pF
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD = 15 V,
ID = 1 A,
11
12
119
55
52
11
20
22
190
88
ns
ns
ns
VGS = 10 V,
RGEN = 6 Ω
ns
Qg
Qgs
Qgd
V
DS = 15 V,
ID = 22 A,
73
nC
nC
nC
VGS = 5 V
17
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current (Note 1a)
2.3
1.2
A
V
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 2.3 A
(Note 2)
0.7
Voltage
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
IF = 22A,
diF/dt = 100 A/µs
42
59
nS
nC
Qrr
•
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the
circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper
chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
a)
44°C/W when mounted
on a 1in2 pad of 2 oz
copper
b)
95°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ5047N Rev D4 (W)
Typical Characteristics
2.6
2.4
2.2
2
100
VGS =10V
4.5V
3.0V
3.5V
VGS = 3.0V
80
60
40
20
0
3.5V
1.8
1.6
1.4
1.2
1
2.5V
4.5V
6.0V
10V
0.8
0
20
40
60
80
100
0
0.5
1
1.5
2
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.8
1.6
1.4
1.2
1
ID = 22A
ID = 11 A
VGS = 10V
0.012
0.008
0.004
0.000
TA = 125oC
0.8
0.6
0.4
TA = 25oC
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
V
GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
VGS = 0V
VDS = 10V
10
TA = 125oC
60
40
20
0
1
0.1
0.01
25oC
-55oC
TA = 125oC
25oC
-55oC
2.5
0.001
0.0001
1
1.5
2
3
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
V
SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ5047N Rev D4 (W)
Typical Characteristics
8000
6000
4000
2000
0
10
VDS =10V
f =1MHz
VGS = 0V
ID = 22A
15V
8
6
4
2
0
20V
CISS
COSS
CRSS
0
5
10
15
20
25
30
0
20
40
60
80
100
V
DS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
50
1ms
SINGLE PULSE
RDS(ON) LIMIT
R
θJA = 95°C/W
TA = 25°C
10ms
40
30
20
10
0
10
1
100ms
1s
10s
DC
VGS = 10V
SINGLE PULSE
0.1
0.01
R
θJA = 95oC/W
TA = 25oC
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
RθJA(t) = r(t) * RθJA
RθJA = 95 °C/W
0.1
0.01
0.1
0.05
P(pk)
t1
t2
0.02
0.01
T
J - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001
0.001
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ5047N Rev D4 (W)
Dimensional Outline and Pad Layout
FDZ5047N Rev D4 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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GTO™
Quiet Series™
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PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7
相关型号：
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