FDZ7296 [FAIRCHILD]
30V N-Channel PowerTrench BGA MOSFET; 30V N沟道的PowerTrench MOSFET BGA
| 型号： | FDZ7296 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench BGA MOSFET |
| 文件： | 总6页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
November 2004
FDZ7296
30V N-Channel PowerTrenchÒ BGA MOSFET
General Description
Features
11 A, 30 V.
RDS(ON) = 8.5 mW @ VGS = 10 V
RDS(ON) = 12 mW @ VGS = 4.5 V
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ7296
minimizes both PCB space and RDS(ON)
.
This BGA
MOSFET embodies breakthrough in packaging
a
·
·
·
·
Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
Ultra-thin package: less than 0.80 mm height
when mounted to PCB.
charge, and low RDS(ON)
.
Applications
High performance trench technology for extremely
low RDS(ON)
·
High-side Mosfet in DC-DC converters for Server
and Notebook applications
Optimized for low Qg and Qgd to enable fast
switching and reduce CdV/dt gate coupling
D
D
S
S
D
S
S
S
S
D
D
S
S
Pin 1
G
S
S
S
Pin 1
G
S
D
D
Top
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Ratings
Units
Drain-Source Voltage
30
V
V
A
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
±20
11
20
ID
(Note 1a)
(Note 1a)
PD
Power Dissipation (Steady State)
2.1
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
(Note 1)
60
6.3
0.6
RqJA
RqJB
RqJC
°C/W
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
7296
FDZ7296
7’’
8mm
3000 units
FDZ7296 Rev B (W)
Ó2004 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
30
V
VGS = 0 V,
ID = 250 mA
Breakdown Voltage Temperature
Coefficient
27
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate–Body Leakage.
VDS = 24 V,
VGS = 0 V
VDS = 0 V
1
mA
nA
VGS = ±20 V,
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
1
1.8
3
V
VDS = VGS
,
ID = 250 mA
Gate Threshold Voltage
Temperature Coefficient
–4.9
DVGS(th)
DTJ
ID = 250 mA, Referenced to 25°C
mV/°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5V,
VGS = 10 V, ID = 11 A, TJ=125°C
ID = 11 A
ID = 10 A
7
9
9.1
8.5
12
13
mW
Dynamic Characteristics
Ciss
Input Capacitance
1520
420
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
Crss
gFS
Reverse Transfer Capacitance
Forward Transconductance
130
46
pF
S
VDS = 5 V,
ID = 11 A
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.1
W
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
10
4
20
8
ns
ns
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
27
13
22
12
4.5
3.1
43
23
31
17
ns
ns
Qg(TOT)
Qg
Total Gate Charge at Vgs=10V
Total Gate Charge at Vgs=5V
Gate–Source Charge
Gate–Drain Charge
nC
nC
nC
nC
VDD = 15 V, ID = 11 A,
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.7
1.2
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 1.7 A
(Note 2)
0.7
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
28
18
nS
nC
IF = 11A
diF/dt = 100 A/µs
(Note 2)
Qrr
Notes:
1.
R
qJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RqJB, is defined for reference. For RqJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RqJC and RqJB are guaranteed by design while RqJA is determined by the user's board design.
a)
60°C/W when
b)
108°C/W when mounted
on a minimum pad of 2 oz
copper
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
FDZ7296 Rev B(W)
Dimensional Outline and Pad Layout
FDZ7296 Rev B(W)
Typical Characteristics
4
3
2
1
0
20
VGS = 3.0V
3.5V
VGS = 10.0V
6.0V
4.0V
15
10
5
4.5V
3.0V
3.5V
4.0V
4.5V
6.0V
10.0V
2.5V
0
0
5
10
ID, DRAIN CURRENT (A)
15
20
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.025
1.6
1.4
1.2
1
ID = 11A
VGS = 10V
ID =5.5 A
0.02
0.015
0.01
TA = 125oC
TA = 25oC
0.8
0.6
0.005
-50
-25
0
25
50
75
100
125
150
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
15
10
5
VGS = 0V
VDS = 5V
10
1
TA = 125oC
TA = 125oC
25oC
0.1
25oC
-55oC
-55oC
0.01
0.001
0.0001
0
0
0.2
0.4
0.6
0.8
1
1.2
1
1.5
2
2.5
3
3.5
4
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7296 Rev B(W)
Typical Characteristics
2000
1600
1200
800
400
0
10
f = 1MHz
VGS = 0 V
ID = 11A
8
VDS = 10V
Ciss
20V
6
15V
4
Coss
2
0
Crss
0
5
10
15
20
0
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
100
10
RDS(ON) LIMIT
SINGLE PULSE
RqJA = 108°C/W
1ms
TA = 25°C
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
RqJA = 108oC/W
TA = 25oC
0.1
0.01
0.01
0.1
1
10
100
1000
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) * Rq
JA
RqJA = 108 °C/W
0.2
0.1
0.1
0.05
P(pk)
t1
0.02
t2
0.01
0.01
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7296 Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Power247™
PowerEdge™
PowerSaver™
PowerTrench
QFET
Stealth™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
OCX™
OCXPro™
FAST
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
ActiveArray™
Bottomless™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
QS™
QT Optoelectronics™ TinyLogic
HiSeC™
I2C™
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TINYOPTO™
TruTranslation™
UHC™
i-Lo™
ImpliedDisconnect™
FACT Quiet Series™
UltraFET
OPTOLOGIC
OPTOPLANAR™
PACMAN™
POP™
SILENT SWITCHER UniFET™
Across the board. Around the world.™
The Power Franchise
ProgrammableActive Droop™
SMART START™
SPM™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I14
相关型号：
FDZ7296_NL
Power Field-Effect Transistor, 11A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ULTRA THIN, BGA-18
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明