FDZ7064S [FAIRCHILD]
30V N-Channel PowerTrench SyncFET BGA MOSFET; 30V N沟道的PowerTrench SyncFET BGA封装的MOSFET
| 型号： | FDZ7064S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench SyncFET BGA MOSFET |
| 文件： | 总7页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2004
FDZ7064S
30V N-Channel PowerTrench SyncFETTM BGA MOSFET
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC power
supplies. Combining Fairchild’s 30V PowerTrench
SyncFET process with state of the art BGA packaging, the
• 13.5 A, 30 V. RDS(ON) = 7 mΩ @ VGS = 10 V
RDS(ON) = 9 mΩ @ VGS = 4.5 V
• Occupies only 14 mm2 of PCB area. Only 42% of the
area of SO-8
FDZ7064S minimizes both PCB space and RDS(ON)
. This
BGA SyncFET embodies a breakthrough in both packaging
and power MOSFET integration which enables the device
to combine excellent thermal transfer characteristics, high
current handling capability, ultra-low profile packaging, low
gate charge, ultra-low reverse recovery charge and low
• Ultra-thin package: less than 0.8 mm height when
mounted to PCB
RDS(ON)
.
• 3.5 x 4 mm2 Footprint
Applications
• High power and current handling capability.
• DC/DC converters
D
Pin 1
D
S
S
S
S
D
S
S
S
S
D
S
S
S
S
D
D
D
D
D
D
D
D
D
D
D
S
S
S
G
G
Pin 1
S
Top
Bottom
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
30
±16
13.5
60
V
V
A
(Note 1a)
(Note 1a)
PD
Power Dissipation (Steady State)
2.2
W
TJ, Tstg
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
R
R
R
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1)
(Note 1)
56
4.5
0.6
°C/W
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
7064S
FDZ7064S
13”
12mm
3000
2004 Fairchild Semiconductor Corporation
FDZ7064S Rev. B2 (W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 1mA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 10mA, Referenced to 25°C
26
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage
VDS = 24 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
500
uA
nA
IGSS
±100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 1mA
1
1.4
3
V
∆VGS(th)
Gate Threshold Voltage
Temperature Coefficient
ID = 10mA, Referenced to 25°C
–0.5
mV/°C
mΩ
∆TJ
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 12 A
VGS=10 V, ID=13.5A, TJ =125°C
RDS(on)
Static Drain–Source
On–Resistance
6
7
9
7
9
11
gFS
Forward Transconductance
VDS = 5 V,
ID = 13.5 A
66
S
Dynamic Characteristics
Ciss
Coss
Crss
RG
Input Capacitance
2840
525
190
1.9
pF
pF
pF
Ω
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VGS = 15 mV, ID = 6 A
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
12
50
18
25
7
20
22
80
32
35
ns
ns
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
ns
ns
Qg
Qgs
Qgd
nC
nC
nC
VDS = 15 V, ID = 13.5 A,
VGS = 5 V
6
Drain–Source Diode Characteristics
VSD
Drain–Source Diode Forward
VGS = 0 V, IS = 3.2 A
(Note 1)
0.4
0.7
V
Voltage
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
22
19
ns
IF = 13.5 A, diF/dt = 300 A/µs
See Diode Characteristic, page
5
Qrr
nC
Notes:
1.
R
is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R , is defined for reference. For R , the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R and R are guaranteed by design while R is determined by the user's board design.
b) 119°C/W when mounted on
a minimum pad of 2 oz
copper
a)
56°C/W when
mounted on a 1in2 pad
of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2004 Fairchild Semiconductor Corporation
FDZ7064S Rev. B2 (W)
Typical Characteristics
60.00
2.25
2
VGS=10.0
6.0V
3.0V
VGS = 2.5V
50.00
40.00
30.00
20.00
10.00
0.00
3.5V
1.75
1.5
1.25
1
4.5V
2.5V
3.0V
3.5V
4.0V
4.5V
6.0V
40
10.0V
50
2.0V
0.75
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
10
20
30
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.60
1.40
1.20
1.00
0.80
0.60
40
30
20
10
0
ID = 13.5A
VGS = 10V
ID =6.8A
TA = 125oC
TA = 25oC
0
2
4
6
8
10
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
VGS = 0V
TA = 125oC
VDS = 5V
10
1
50
40
30
20
10
0
25oC
0.1
0.01
TA = 125oC
25oC
-55oC
-55oC
0.001
0.0001
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ7064S Rev B2 (W)
Typical Characteristics
10
4000
3000
2000
1000
0
ID = 13.5A
f = 1MHz
VGS = 0 V
8
VDS = 10V
Ciss
6
4
15V
20V
Coss
2
0
Crss
0
5
10
15
20
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
50
40
30
20
10
0
RDS(ON) LIMIT
SINGLE PULSE
RθJA = 119°C/W
TA = 25°C
1ms
10ms
100ms
1s
10s
1
VGS = 10V
SINGLE PULSE
RθJA = 119oC/W
DC
0.1
T
A = 25oC
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
t1, TIME (sec)
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
RθJA = 119 °C/W
0.1
0.1
P(pk)
0.05
0.02
t1
t2
0.01
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ7064S Rev B2 (W)
Typical Characteristics
SyncFET Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDZ7064S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
TA = 125oC
0.01
TA = 100oC
0.001
0.0001
TA = 25oC
0.00001
0
5
10
15
20
25
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Figure 12. FDZ7064S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET .
Figure 13. Non-SyncFET (FDZ7064N) body
diode reverse recovery characteristic.
FDZ7064S Rev B2 (W)
Dimensional Outline and Pad Layout
FDZ7064S Rev B2 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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QT Optoelectronics™ TinyLogic
Quiet Series™
RapidConfigure™
RapidConnect™
µSerDes™
TINYOPTO™
TruTranslation™
UHC™
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I2C™
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PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
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CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
相关型号：
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FAIRCHILD
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