FDP6688L86Z [FAIRCHILD]
Power Field-Effect Transistor, 96A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;![FDP6688L86Z](http://pdffile.icpdf.com/pdf2/p00276/img/icpdf/FDP6688L86Z_1649913_icpdf.jpg)
型号: | FDP6688L86Z |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 96A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 开关 脉冲 晶体管 |
文件: | 总10页 (文件大小:344K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
August 2001
PRELIMINARY
FDP6688/FDB6688
30V N-Channel Logic Level PowerTrenchÒ MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
· 48 A, 30 V.
RDS(ON) = 5.0 mW @ VGS = 10 V
RDS(ON) = 6.5 mW @ VGS = 4.5 V
· Critical DC electrical parameters specified at
elevated temperature
extremely low RDS(ON)
.
Applications
· High performance trench technology for extremely
low RDS(ON)
· Synchronous rectifier
· DC/DC converter
· 175°C maximum junction temperature rating
D
D
G
G
G
D
S
S
TO-263AB
FDB Series
TO-220
FDP Series
S
Absolute Maximum Ratings TA =25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 4)
(Note 1)
(Note 1)
± 16
96
V
A
280
PD
Total Power Dissipation @ TC = 25°C
Derate above 25°C
93
W
W/°C
°C
0.48
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +175
Thermal Characteristics
RqJC
Thermal Resistance, Junction-to-Case
1.6
°C/W
°C/W
RqJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
FDP6688
Device
FDP6688
FDB6688
Reel Size
Tube
Tape width
n/a
Quantity
45
800 units
FDB6688
13”
24mm
Ó2001 Fairchild Semiconductor Corporation
FDP6688/FDB6688 Rev B(W)
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
IAR
Single Pulse Drain-Source
Avalanche Energy
VDD = 15 V,
ID = 21 A
370
21
mJ
A
Maximum Drain-Source Avalanche
Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250 mA
30
V
Breakdown Voltage Temperature
Coefficient
DBVDSS
DTJ
ID = 250 mA, Referenced to 25°C
23
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 16 V,
VGS = 0 V
VDS = 0 V
10
mA
nA
nA
IGSSF
IGSSR
100
VGS = –16 V, VDS = 0 V
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 250 mA
1
2
3
V
Gate Threshold Voltage
Temperature Coefficient
DVGS(th)
DTJ
RDS(on)
ID = 250 mA, Referenced to 25°C
–6.8
mV/°C
mW
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
ID = 48 A
ID = 45 A
3.5
4.6
5.1
5
6.5
9
VGS = 10V, ID = 48 A, TJ = 125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 48 A
60
A
S
Forward Transconductance
135
Dynamic Characteristics
C
Input Capacitance
3682
939
pF
pF
pF
iss
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Coss
Output Capacitance
C
rss
Reverse Transfer Capacitance
374
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
16
11
55
43
36
11
14
28
20
88
68
50
ns
ns
ns
ns
Qg
VDS = 15 V,
VGS = 5 V
ID = 48 A,
nC
nC
nC
Qgs
Qgd
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
96
1.3
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 48 A
0.9
Notes:
1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP6688/FDB6688 Rev. B(W)
Typical Characteristics
280
1.8
1.6
1.4
1.2
1
VGS = 10V
6.0V
5.0V
4.5V
210
140
70
VGS = 4.0V
4.0V
4.5V
5.0V
6.0V
3.5V
10V
0.8
0
0
70
140
ID, DRAIN CURRENT (A)
210
280
0
1
2
3
4
5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
1.8
1.6
1.4
1.2
1
ID = 48A
VGS =10V
ID = 24A
0.010
0.008
0.006
0.004
TA = 125oC
TA = 25oC
0.8
0.6
-50
-25
0
25
50
75
100
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
90
VGS = 0V
TA = 55oC
VDS = 5V
25oC
125oC
75
60
45
30
15
0
10
1
TA = 125oC
25oC
0.1
0.01
-55oC
0.8
2
2.5
3
3.5
4
0
0.2
0.4
0.6
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6688/FDB6688 Rev. B(W)
Typical Characteristics
5000
4000
3000
2000
1000
0
10
f = 1MHz
VGS = 0V
VDS = 10V
ID = 48A
15V
CISS
8
6
4
2
0
20V
COSS
CRSS
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
VDS , DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
1000
100µs
10ms
100µs
RDS(ON) LIMIT
RDS(ON) LIMIT
10ms
100m
1s
100m
1s
100
10
1
100
10
1
10s
10s
DC
DC
VGS = 10V
SINGLE PULSE
RqJC = 1.6 oC/W
VGS = 10V
SINGLE PULSE
Rq = 1.6 oC/W
JC
TA = 25 o
C
TA = 25 o
C
0.1
1
10
100
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJC(t) = r(t) * RqJC
RqJC = 1.6 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
SINGLEPULSE
TJ - Tc = P * RqJC(t)
Duty Cycle, D = t1 / t2
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6688/FDB6688 Rev. B(W)
TO-220 Tube Packing Data
TO-220 Tube Packing
Configuration: Figur e 1.0
Packaging Description:
TO-220 parts are shipped normally in tube. The tube is
made of PVC plastic treated with anti-static agent.These
tubes in standard option are placed inside
plastic bag, barcode labeled, and placed inside
a
dissipative
box
a
45 units per Tube
made of recyclable corrugated paper. One box contains
two bags maximum (see fig. 1.0). And one or several of
these boxes are placed inside
a labeled shipping box
whic h comes in different sizes dependi ng on the number
of parts shipped. The other option comes in bulk as
described in the Packaging Information table. The units in
this option are placed inside
static bubble sheet. These smaller boxes are individually
labeled and placed inside larger box (see fig. 3.0).
These larger or intermediate boxes then will be placed
finally inside a labeled shipping box which still comes in
different sizes depending on the number of units shipped.
a small box laid with anti-
a
12 Tubes per Bag
530mm x 130mm x 83mm
Intermediate box
2 bags per Box
Conduct ive Plastic Bag
TO-220 Packaging
Information: Figure 2.0
FSCINT Label sample
FAIRCHILD SEMICONDUCTOR CORPORATION
HTB:B
QTY:
1080
LOT:
CBVK741B019
1080 units maximum
quantity per box
TO-220 Packaging Information
NSID:
D/C1:
SPEC:
FDP7060
Standard
(no flow code)
Packaging Option
S62Z
SPEC REV:
QA REV:
D9842
B2
Packaging type
Rail/Tube
BULK
300
Qty per Tube/Box
Box Dimension (mm)
Max qty per Box
45
FSCINT Label
(FSCINT)
530x130x83 114x102x51
1,080
1,500
Weight per unit (gm)
1.4378
1.4378
Note/Comments
TO-220 bulk Packing
Configuration: Figure 3.0
Anti-static
530mm x 130mm x 83mm
Intermediate box
Bubbl e Sheets
FSCINT Label
1500 units maximum
quantity per intermediate box
300 units per
EO70 box
5 EO70 boxes per per
Intermediate Box
114mm x 102mm x 51mm
EO70 Immediate Box
FSCINT Label
TO-220 Tube
Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
0.275
0.450
±.030
9852
9852
9852
9852
9852
9852
9852 9852 9852 9852 9852
F F F F F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
9852
F
F
F
F
F
F
F
NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L NDP4060L
1.300
±.015
0.160
0.032
±.003
20.000
+0.031
-0.065
0.800
0.275
August 1999, Rev. B
©2000 Fairchild Semiconductor International
TO-220 Package Dimensions
TO-220 (FS PKG Code 37)
1 : 1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
September 1998, Rev. A
©2000 Fairchild Semiconductor International
TO-263AB/D2PAK Tape and Reel Data
TO-263AB/D2PAK Packaging
Configuration: Figure 1.0
Packaging Description:
TO-263/D2PAK parts are shipped in tape. The carrier tape
is made from
a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
800 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packaging Information table.
Antistatic Cover Tape
These full reels are individually barcode labeled, dry
packed, and placed inside
a standard intermediate box
(illustrated in figure 1.0) made of recyclable corrugated
brown paper. One box contains one reel maximum. And
these boxes are placed inside a barcode labeled shipping
box which comes in different sizes depending on the
number of parts shipped.
Static Dissipative
Embossed Carrier Tape
Moisture Sensitive
Label
F63TNR
Label
Customized
Label
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
A 3 L 0 B 6 D F
3 5 9 F 8
TO-263AB/D2PAK Packaging Information
Standard
(no flow code)
L86Z
Packaging Option
TO-263AB/D2PAK Unit Orientation
Packaging type
TNR
800
Rail/Tube
Qty per Reel/Tube/Bag
Reel Size
45
-
13" Dia
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel
346x346x70 530x130x83
800
1,080
1.4378
-
346mm x 346mm x 70mm
Standard Intermediate box
1.4378
1.6050
ESD Label
Note/Comments
Moisture Sensitive
Label
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 800
SPEC:
FSID: FDB6320L
DRYPACK Bag
D/C1: D9842AB QTY1:
SPEC REV:
CPN:
D/C2:
QTY2:
N/F: F
(F63TNR)3
TO-263AB/D2PAK Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
Leader Tape
400mm minimum or
25 empty pockets
1520mm minimum or
95 empty pockets
January 2001, Rev. C
©2001 Fairchild Semiconductor Corpooration
TO-263AB/D2PAK Tape and Reel Data, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
E2
F
W
K0
Wc
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
A0
B0
W
D0
D1
E1
E2
F
P1
P0
K0
T
Wc
Tc
Pkg type
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
16.70
+/-0.20
24.0
+/-0.3
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
22.25
min
11.50
+/-0.10
16.0
+/-0.1
4.0
+/-0.1
4.90
+/-0.10
0.450
+/-0.150
21.0
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.5mm
maximum
10 deg maximum
Typical
component
cavity
center line
0.5mm
maximum
B0
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
Component Rotation
Sketch C (Top View)
Component lateral movement
A0
Sketch B (Top View)
Component Rotation
TO-263AB/D2PAK Reel Configuration:
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Reel
Option
Tape Size
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.961 +0.078/-0.000
24.4 +2/0
1.197
30.4
0.941 – 0.1.079
23.9 – 27.4
24mm
13" Dia
January 2001, Rev. C
TO-263AB/D2PAK Package Dimensions
TO-263AB/D2PAK (FS PKG Code 45)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 1.4378
August 1998, Rev. A
©2000 Fairchild Semiconductor International
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
QFET™
STAR*POWER™
Stealth™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QS™
EcoSPARK™
E2CMOSTM
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
EnSignaTM
UltraFET
VCX™
FACT™
FACT Quiet Series™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H3
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