FDP7030BLS [FAIRCHILD]
30V N-Channel PowerTrench㈢SyncFET⑩; 30V N通道PowerTrench㈢SyncFET⑩
| 型号： | FDP7030BLS |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench㈢SyncFET⑩ |
| 文件： | 总6页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
May 2001
FDP7030BLS / FDB7030BLS
30V N-Channel PowerTrenchÒ SyncFET™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
·
56 A, 30 V.
RDS(ON) = 10.5 mW @ VGS = 10 V
RDS(ON) = 16.5 mW @ VGS = 4.5 V
·
·
·
Includes SyncFET Schottky body diode
Low gate charge (15nC typical)
RDS(ON)
and low gate charge.
The FDP7030BLS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDP7030BLS as the low-side switch in
a
synchronous rectifier is indistinguishable from the
High performance trench technology for extremely
low RDS(ON) and fast switching
performance of the FDP7030BL in parallel with
Schottky diode.
a
·
High power and current handling capability
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
D
FDP Series
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
V
±20
56
Drain Current – Continuous
(Note 1)
(Note 1)
A
– Pulsed
160
65
PD
W
Total Power Dissipation @ T = 25°C
C
Derate above 25°C
W/°C
°C
0.43
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
–65 to +100
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
°C
275
Thermal Characteristics
RqJC
Thermal Resistance, Junction-to-Case
2.3
°C/W
°C/W
RqJA
Thermal Resistance, Junction-to-Ambient
62.5
Package Marking and Ordering Information
Device Marking
FDB7030BLS
FDP7030BLS
Device
Reel Size
Tape width
24mm
Quantity
FDB7030BLS
FDP7030BLS
13’’
800 units
45
Tube
n/a
FDP7030BLS Rev B(W)
Ó 2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
= 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 1 mA
30
V
DBVDSS
DTJ
Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25°C
22
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 20 V,
VGS = –20 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
500
100
µA
nA
nA
IGSSF
IGSSR
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS
,
ID = 1 mA
1
2.3
3
V
DVGS(th)
DTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 1 mA, Referenced to 25°C
–4.4
mV/°C
mW
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
ID = 28 A
ID = 23 A
8.6
13.2
12.4
10.5
16.5
16.5
VGS=10 V, ID = 28A, TJ = 100°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 5 V,
VDS = 5 V
ID = 28 A
50
A
S
Forward Transconductance
47
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
1708
474
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
VGS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
134
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
11
8
21
16
48
29
21
ns
ns
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 W
tr
td(off)
tf
30
16
15
7
ns
ns
Qg
nC
nC
nC
VDS = 15 V,
VGS = 5 V
ID = 28 A
Qgs
Qgd
5
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
3.5
0.7
A
V
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 11.5A,
(Note 1)
(Note 1)
0.44
0.60
20
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
ns
diF/dt = 300 A/µs
(Note 2)
Qrr
20
nC
Notes:
1. Pulse Test: Pulse Width < 300ms, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP7030BLS Rev B(W)
Typical Characteristics
120
2
1.8
1.6
1.4
1.2
1
VGS = 10V
6.0V
VGS = 4.5V
5.0V
90
5.0V
4.5V
60
30
0
6.0V
7.0V
4.0V
8.0V
10V
0.8
0
1
2
3
4
5
0
20
40
60
80
100
120
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.04
0.03
0.02
0.01
1.4
1.2
1
ID = 28A
VGS =10V
ID = 14A
TA = 100oC
0.8
0.6
TA = 25oC
-50
-25
0
25
50
75
100
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
60
50
40
30
20
10
0
10
TA = 55o C
25o C
VGS = 0V
VDS = 5V
TA = 100oC
100oC
1
25oC
0.1
0.01
-55oC
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
2
2.5
3
3.5
4
4.5
5
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP7030BLS Rev B(W)
Typical Characteristics (continued)
2500
2000
1500
1000
500
10
f = 1MHz
VGS = 0 V
VDS = 5V
ID = 28A
10V
8
6
4
2
0
CISS
15V
COSS
CRSS
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
100
10
5000
4000
3000
2000
1000
0
SINGLE PULSE
RqJA = 2.3°C/W
TA = 25°C
10ms
100m
RDS(ON) LIMIT
1s
10s
50s
DC
VGS = 10V
SINGLE PULSE
RqJA = 2.3oC/W
TA = 25o
C
1
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VD S, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RqJA(t) = r(t) + Rq
JA
0.2
RqJA = 2.3 °C/W
0.1
0.1
0.01
0.05
P(pk
0.02
0.01
t1
t2
TJ - TA = P * RqJA(t)
Duty Cycle, D = t1
t2
/
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP7030BLS Rev B(W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
diode in parallel with
FDP7030BLS.
a
MOSFET.
Figure 12
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
0.1
TA = 100oC
0.01
0.001
TA = 25oC
0.0001
Time: 10ns/div
0.00001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 12. FDP7030BLS SyncFET body
diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP7030BL).
Figure 13. Non-SyncFET (FDP7030BL) body
diode reverse recovery characteristic.
Time: 10ns/div
FDP7030BLS Rev B(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
OPTOPLANAR™
PACMAN™
POP™
PowerTrench
QFET™
QS™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
FAST
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
SMART START™
Stealth™
UltraFET
VCX™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H2
相关型号：
FDP7030BLS62Z
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030BLSJ69Z
Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
FDP7030BLSS62Z
Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030BL_NL
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030LJ69Z
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030LS62Z
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7042LJ69Z
Power Field-Effect Transistor, 50A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明