FDP6N60ZU_12 [FAIRCHILD]
N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω; N沟道MOSFET ， FRFET 600V ， 4.5A ， 2I ©
| 型号： | FDP6N60ZU_12 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω |
| 文件： | 总9页 (文件大小：291K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2012
UniFETM
FDP6N60ZU / FDPF6N60ZUT
N-Channel MOSFET, FRFET
600V, 4.5A, 2Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A
Low gate charge ( Typ. 14.5nC)
Low Crss ( Typ. 5pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS compliant
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D S
G
D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP6N60ZU
FDPF6N60ZUT Units
Drain to Source Voltage
Gate to Source Voltage
600
V
V
±30
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
4.5
2.7
18
4.5*
2.7*
18*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
150
4.5
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
10.5
20
mJ
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate above 25oC
105
33.8
0.27
PD
Power Dissipation
0.85
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
Parameter
Units
FDP6N60ZU
FDPF6N60ZUT
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
1.2
0.5
3.7
-
RθCS
RθJA
oC/W
62.5
62.5
©2012 Fairchild Semiconductor Corporation
FDP6N60ZU / FDPF6N60ZUT Rev. C0
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
FDP6N60ZU
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP6N60ZU
FDPF6N60ZUT
-
-
-
-
50
50
FDPF6N60ZUT
TO-220F
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
600
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25oC
0.75
V/oC
V
DS = 600V, VGS = 0V
-
-
-
-
-
-
25
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
μA
VDS = 480V, TC = 125oC
250
±10
VGS = ±30V, VDS = 0V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 2.25A
VDS = 40V, ID = 2.25A
3.0
-
5.0
2.0
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
1.7
3.5
Dynamic Characteristics
Ciss
Coss
Crss
Qg
Input Capacitance
-
-
-
-
-
650
75
5
865
100
10
20
-
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
14.5
4
V
V
DS = 480V, ID = 4.5A
GS = 10V
Qgs
Qgd
Gate to Drain “Miller” Charge
-
6
-
nC
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
19
25
25
45
48
60
ns
ns
ns
ns
VDD = 300V, ID = 4.5A
G = 25Ω, VGS = 10V
R
60
100
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
4.5
18
1.6
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 4.5A
-
V
36
37
ns
nC
VGS = 0V, ISD = 4.5A
dIF/dt = 100A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 15mH, I = 4.5A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3:
I
≤ 4.5A, di/dt ≤ 200A/μs, V ≤ BV , Starting T = 25°C
SD
DD
DSS J
4: Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
20
20
VGS = 15.0 V
*Notes:
10.0 V
1. VDS = 20V
10
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
2. 250μs Pulse Test
150oC
1
1
25oC
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
0.1
0.1
0.1
2
4
6
8
1
10
20
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
200
2.7
100
10
1
2.4
150oC
2.1
VGS = 10V
25oC
VGS = 20V
1.8
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
1.5
0
1
2
3
0
3
6
9
12
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
8
1500
1000
500
0
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
= C
gd
oss
rss
VDS = 150V
VDS = 300V
VDS = 480V
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
6
Ciss
4
2
Crss
*Note: ID = 4.5A
10
0
0
5
15
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDPF6N60ZUT
30
1.16
1.12
1.08
1.04
1.00
20μs
10
100μs
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
0.96
*Notes:
1. TC = 25oC
2. TJ = 150oC
*Notes:
1. VGS = 0V
0.92
2. ID = 250μA
3. Single Pulse
0.01
0.88
-100
1
10
100
1000
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Drain Current
vs. Case Temperature
6
4
Limited by package
2
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve - FDPF6N60ZUT
5
0.5
1
0.2
0.1
0.05
PDM
t1
0.1
0.02
t2
*Notes:
0.01
1. ZθJC(t) = 3.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
10
102
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
6
Mechanical Dimensions
TO-220
4.50 0.20
+0.10
9.90 0.20
(8.70)
1.30
ø3.60 0.10
–0.05
1.27 0.10
2.54TYP
1.52 0.10
0.80 0.10
2.54TYP
+0.10
–0.05
0.50
2.40 0.20
[2.54 0.20
]
[2.54 0.20]
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
7
Package Dimensions
TO-220F Potted
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
8
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
F-PFS™
PowerTrench®
PowerXS™
The Power Franchise®
FRFET®
®
AccuPower™
AX-CAP™*
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
Programmable Active Droop™
BitSiC®
QFET®
TinyBoost™
TinyBuck™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
QS™
Quiet Series™
RapidConfigure™
™
TinyCalc™
TinyLogic®
GTO™
IntelliMAX™
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
ISOPLANAR™
Marking Small Speakers Sound Louder SignalWise™
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
MicroPak™
STEALTH™
®
MicroPak2™
MillerDrive™
MotionMax™
Motion-SPM™
mWSaver™
SuperFET®
Fairchild®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
Sync-Lock™
®*
FastvCore™
FETBench™
FlashWriter®
FPS™
*
®
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I61
www.fairchildsemi.com
FDP6N60ZU / FDPF6N60ZUT Rev. C0
9
相关型号：
FDP7030BLS62Z
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030BLSJ69Z
Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN
FAIRCHILD
FDP7030BLSS62Z
Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030BL_NL
Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030LJ69Z
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
FDP7030LS62Z
Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明