FDP6676S [FAIRCHILD]
30V N-Channel PowerTrench SyncFET⑩; 30V N沟道的PowerTrench SyncFET⑩
| 型号： | FDP6676S |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 30V N-Channel PowerTrench SyncFET⑩ |
| 文件： | 总6页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2001
FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET™
General Description
Features
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDP/B6676S
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
• 38 A, 30 V.
RDS(ON) = 6.5 mΩ @ VGS = 10 V
DS(ON) = 8.0 mΩ @ VGS = 4.5 V
R
• Includes SyncFET Schottky body diode
• Low gate charge (40nC typical)
the FDP/B6676S as the low-side switch in
a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
• High performance trench technology for extremely
low RDS(ON) and fast switching
• High power and current handling capability
•
D
D
G
G
G
S
TO-263AB
FDB Series
TO-220
FDP Series
D
S
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
ID
Gate-Source Voltage
V
A
±16
76
Drain Current – Continuous
(Note 1)
(Note 1)
– Pulsed
150
PD
W
W/°C
°C
Total Power Dissipation @ TC = 25°C
70
Derate above 25°C
0.56
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
–55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
°C
275
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
1.8
55
°C/W
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
24mm
Quantity
FDB6676S
FDB6676S
FDP6676S
13’’
800
45
FDP6676S
Tube
n/a
FDP6676S/FDB6676S Rev. C (W)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
IAR
Drain-Source Avalanche Energy
Drain-Source Avalanche Current
Single Pulse, VDD = 25 V, ID=12A
310
12
mJ
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 1 mA
30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
25
ID = 1 mA, Referenced to 25°C
mV/°C
IDSS
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VDS = 24 V,
VGS = 16 V,
VGS = –16 V
VGS = 0 V
VDS = 0 V
VDS = 0 V
500
100
µA
nA
nA
IGSSF
IGSSR
–100
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 1 mA
1
1.3
3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 1 mA, Referenced to 25°C
–8.4
mV/°C
mΩ
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
VGS = 4.5 V,
ID = 38 A
ID = 35 A
4.7
5.2
7.3
6.5
8.0
11
VGS=10 V, ID =38A, TJ=125°C
ID(on)
gFS
On–State Drain Current
VGS = 10 V,
VDS = 10 V,
VDS = 10 V
ID = 38 A
60
A
S
Forward Transconductance
145
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
4853
850
pF
pF
pF
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
Output Capacitance
Reverse Transfer Capacitance
316
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
14
11
89
31
40
10
11
25
20
ns
ns
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
142
50
ns
ns
Qg
Qgs
Qgd
56
nC
nC
nC
VDS = 15 V,
ID = 38 A,
V
GS = 5 V
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 3.5 A,
(Note 1)
0.4
0.5
28.5
0.7
V
(Note 1)
trr
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
nS
nC
diF/dt = 300 A/µs
(Note 2)
Qrr
57
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. See “SyncFET Schottky body diode characteristics” below.
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics
150
1.8
1.6
1.4
1.2
1
VGS = 10V
3.5V
VGS = 2.5V
125
4.5V
3.0V
100
75
50
25
0
2.5V
3.0V
3.5V
4.5V
10V
125
0.8
0
25
50
75
100
150
0
1
2
3
4
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.6
1.4
1.2
1
ID = 38A
VGS =10V
ID = 19A
0.014
0.012
0.01
TA = 125oC
0.008
0.006
0.004
0.8
0.6
TA = 25oC
120
-55
-35
-15
5
25
45
65
85
105
2
4
6
8
10
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
90
VGS = 0V
VDS = 5V
75
10
60
45
TA = 125oC
1
TA = 125oC
30
25oC
25oC
0.1
15
-55oC
-55oC
0
0.01
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
VGS, GATE TO SOURCE VOLTAGE (V)
V
SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics (continued)
6400
5600
4800
4000
3200
2400
1600
800
10
f = 1MHz
GS = 0 V
VDS = 10V
ID = 38A
15V
V
CISS
8
6
4
2
0
20V
COSS
CRSS
0
0
5
10
15
20
25
30
0
20
40
Qg, GATE CHARGE (nC)
60
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
1000
1000
800
600
400
200
0
SINGLE PULSE
RθJC = 1.8°C/W
TA = 25°C
10ms
100m
RDS(ON) LIMIT
100
10
1
1s
10s
DC
VGS = 10V
SINGLE PULSE
RθJC = 1.8oC/W
TA = 25oC
0.1
1
10
100
1
10
100
1000
V
DS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
R
θJC(t) = r(t) * RθJC
0.2
R
θJC = 1.8 °C/W
0.1
0.1
0.05
P(pk
0.02
t1
t2
0.01
0.01
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
FDP6676S/FDB6676S Rev C (W)
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET. This diode
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 12
FDP6676S.
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
0.1
TA = 100oC
0.01
0.001
TA = 25oC
0.0001
0.00001
0
10
20
30
VDS, REVERSE VOLTAGE (V)
Figure 14. SyncFET diode reverse leakage
versus drain-source voltage and
temperature.
Time : 12.5ns/div
Figure 12. FDP6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDP6676).
Time : 12.5ns/div
Figure 13. Non-SyncFET (FDP6676) body
diode reverse recovery characteristic.
FDP6676S/FDB6676S Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
â
SMART START™
STAR*POWER™
Stealth™
VCX™
FAST
ACEx™
Bottomless™
CoolFET™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
FASTr™
FRFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
CROSSVOLT™
DenseTrench™
DOME™
POP™
Power247™
PowerTrenchâ
QFET™
EcoSPARK™
E2CMOSTM
TinyLogic™
QS™
EnSignaTM
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
SILENTSWITCHERâ
FACT™
FACT Quiet Series™
UltraFETâ
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.
As used herein:
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the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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