FDP15N50_NL [FAIRCHILD]
Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN;
| 型号： | FDP15N50_NL |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总6页 (文件大小：349K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FDH15N50 / FDP15N50 / FDB15N50
N-Channel UniFETTM MOSFET
500 V, 15 A, 380 mΩ
Description
Features
UniFETTM MOSFET is Fairchild Semiconductor®’s high
voltage MOSFET family based on planar stripe and
DMOS technology. This MOSFET is tailored to reduce
on-state resistance, and to provide better switching
performance and higher avalanche energy strength.
This device family is suitable for switching power
converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
• Low gate charge Qg results in simple drive requirement
( Typ. 33 nC)
• Improved Gate, avalanche and high reapplied dv/dt
ruggedness
• Reduced RDS(on) ( 330mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A)
• Reduced Miller capacitance and low Input capacitance
( Typ. Crss = 16 pF)
• Improved switching speed with low EMI
• 175oC rated junction temperature
Applications
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
G
G
D
D
G
S
S
TO-220
S
TO-247
TO-263
S
o
Absolute Maximum Ratings T = 25 C unless otherwise noted
C
Symbol
Parameter
Drain to Source Voltage
Ratings
500
Unit
V
V
DSS
V
Gate to Source Voltage
±30
V
GS
Drain Current
o
15
11
60
A
A
Continuous (T = 25 C, V = 10V)
C
GS
I
D
o
Continuous (T = 100 C, V = 10V)
C
GS
1
Pulsed
A
Power dissipation
Derate above 25 C
300
2
W
W/ C
P
o
o
D
o
T , T
Operating and Storage Temperature
Soldering Temperature for 10 seconds
-55 to 175
C
J
STG
o
300 (1.6mm from case)
C
Thermal Characteristics
o
R
R
R
Thermal Resistance Junction to Case
0.50
C/W
θJC
θJA
θJA
o
Thermal Resistance Junction to Ambient (TO-247)
Thermal Resistance Junction to Ambient (TO-220, TO-263)
40
62
C/W
C/W
o
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 Rev. C0
Package Marking and Ordering Information
Device Marking
FDH15N50
Device
Package
TO-247
TO-220
TO-263
Reel Size
Tube
Tape Width
Quantity
30
FDH15N50
FDP15N50
FDB15N50
-
-
FDP15N50
Tube
50
FDB15N50
330mm
24mm
800
Electrical Characteristics T = 25°C (unless otherwise noted)
J
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Statics
B
Drain to Source Breakdown Voltage
I
= 250µA, V = 0V
500
-
-
-
-
V
VDSS
D
GS
o
Reference to 25 C,
ID = 1mA
∆B
/∆T Breakdown Voltage Temp. Coefficient
0.58
V/°C
VDSS
J
r
Drain to Source On-Resistance
Gate Threshold Voltage
V
V
V
V
V
= 10V, I = 7.5A
-
0.33
0.38
4.0
Ω
DS(ON)
GS
DS
DS
GS
GS
D
V
= V , I = 250µA
2.0
3.4
V
GS(th)
GS
D
o
= 500V
T
T
= 25 C
-
-
-
-
-
-
25
C
C
I
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
µA
nA
DSS
o
= 0V
= 150 C
250
±100
I
= ±30V
GSS
Dynamics
g
Forward Transconductance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Delay Time
Rise Time
V
= 10V, I = 7.5A
10
-
-
33
7.2
12
9
-
41
10
16
-
S
fs
DD
D
Q
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
g(TOT)
V
V
= 10V,
= 400V,
= 15A
GS
Q
Q
-
gs
gd
DS
I
D
-
t
-
d(ON)
V
I
= 250V,
= 15A,
= 6.2Ω,
= 17Ω
DD
t
-
5.4
26
5
-
r
D
R
R
t
Turn-Off Delay Time
Fall Time
-
-
G
D
d(OFF)
t
-
-
f
C
Input Capacitance
-
1850
230
16
-
ISS
V
= 25V, V = 0V,
GS
DS
C
Output Capacitance
Reverse Transfer Capacitance
-
-
OSS
RSS
f = 1MHz
C
-
-
Avalanche Characteristics
2
E
Single Pulse Avalanche Energy
Avalanche Current
760
-
-
-
-
mJ
A
AS
AR
I
15
Drain-Source Diode Characteristics
Continuous Source Current
D
S
MOSFET symbol
showing the
integral reverse
p-n junction diode.
I
-
-
-
-
15
60
A
A
S
(Body Diode)
G
1
Pulsed Source Current
(Body Diode)
I
SM
V
Source to Drain Diode Voltage
Reverse Recovery Time
I
I
I
= 15A
-
-
-
0.86
470
5
1.2
730
6.6
V
SD
SD
SD
SD
t
= 15A, di /dt = 100A/µs
ns
µC
rr
SD
Q
Reverse Recovered Charge
= 15A, di /dt = 100A/µs
SD
RR
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting T = 25°C, L = 7.0mH, I = 15A
J
AS
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 Rev. C0
Typical Characteristics
100
o
100
10
1
o
T
= 25 C
T
V
= 175 C
J
J
V
DESCENDING
DESCENDING
GS
GS
10V
6V
5.5V
5V
4.5V
4V
10V
6.5V
6V
5.5V
5V
4.5V
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
1
1
10
100
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
Figure 2. Output Characteristics
60
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
PULSE DURATION = 80µs
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
DUTY CYCLE = 0.5% MAX
VDD = 100V
50
40
30
20
10
0
TJ = 175oC
TJ = 25oC
V
= 10V, I = 7.5A
D
GS
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
4000
1000
15
CISS
ID = 15A
12
9
100V
250V
COSS
400V
6
100
CRSS
3
VGS = 0V, f = 1MHz
0
10
1
10
100
0
10
20
30
40
50
Qg, GATE CHARGE (nC)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source
Voltage
Figure 6. Gate Charge Waveforms For Constant
Gate Current
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 Rev. C0
Typical Characteristics
30
25
20
100
10
TC = 25oC
100µs
1ms
15
TJ = 175oC
TJ = 25oC
10ms
DC
10
5
1.0
0.1
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
10
100
1000
VSD, SOURCE TO DRAIN VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Body Diode Forward Voltage vs Body
Diode Current
Figure 8. Maximum Safe Operating Area
16
12
8
50
If R = 0
AV
If R ≠ 0
t
= (L)(I )/(1.3*RATED BV
- V
DD
)
AS
DSS
t
= (L/R)ln[(I *R)/(1.3*RATED BV
- V ) +1]
DSS DD
AV
AS
10
o
STARTING T = 25 C
J
4
o
STARTING T = 150 C
J
0
25
1
0.01
50
75
100
125
150
175
0.1
1
10
50
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Maximum Drain Current vs Case
Temperature
Figure 10. Unclamped Inductive Switching
Capability
0
10
0.50
0.20
t
1
-1
10
0.10
0.05
P
D
t
2
DUTY FACTOR, D = t / t
1
2
0.02
PEAK T = (P
D
X Z
X R
) + T
JC C
J
θ
JC
θ
0.01
SINGLE PULSE
-2
10
-5
-4
-3
-2
-1
10
0
1
10
10
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 Rev. C0
Test Circuits and Waveforms
V
BV
DSS
DS
t
P
V
DS
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
0
AS
0.01Ω
t
AV
Figure 12. Unclamped Energy Test Circuit
Figure 13. Unclamped Energy Waveforms
V
DS
V
Q
V
DD
g(TOT)
R
L
V
= 10V
GS
DS
V
GS
+
-
V
DD
V
GS
V
= 1V
DUT
GS
0
I
g(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
Figure 14. Gate Charge Test Circuit
Figure 15. Gate Charge Waveforms
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
-
V
GS
V
DD
10%
10%
0
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
Figure 16. Switching Time Test Circuit
Figure 17. Switching Time Waveform
www.fairchildsemi.com
©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 Rev. C0
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intended to be an exhaustive list of all such trademarks.
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Global Power Resource
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GTO™
IntelliMAX™
ISOPLANAR™
Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
SM
TinyBoost™
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®
®
TinyLogic
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®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
®
TranSiC
®
and Better™
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MicroPak™
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TriFault Detect™
TRUECURRENT *
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®
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®
®
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SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild
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®
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FAST
®
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®
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
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©2003 Fairchild Semiconductor Corporation
FDH15N50 / FDP15N50 / FDB15N50 Rev. C0
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