FDP16N50_12 [FAIRCHILD]
500V N-Channel MOSFET; 500V N沟道MOSFET
| 型号： | FDP16N50_12 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 500V N-Channel MOSFET |
| 文件： | 总10页 (文件大小：800K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2012
TM
UniFET
FDP16N50 / FDPF16N50 / FDPF16N50T
500V N-Channel MOSFET
Features
Description
•
•
•
•
•
•
16A, 500V, RDS(on) = 0.38Ω @VGS = 10 V
Low gate charge ( typical 32 nC)
Low Crss ( typical 20 pF)
Fast switching
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
100% avalanche tested
Improved dv/dt capability
D
G
TO-220F
FDPF Series
S
TO-220
FDP Series
G D
S
G
D S
Absolute Maximum Ratings
FDPF16N50 /
FDPF16N50T
Symbol
Parameter
FDP16N50
Unit
VDSS
Drain-Source Voltage
Drain Current
500
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
16
9.6
16 *
9.6 *
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
64
64 *
A
V
VGSS
EAS
IAR
Gate-Source voltage
±30
780
16
Single Pulsed Avalanche Energy
Avalanche Current
mJ
A
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
20
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
- Derate above 25°C
200
1.59
38.5
0.3
W
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
* Drain current limited by maximum junction temperature
Thermal Characteristics
FDPF16N50 /
FDPF16N50T
Symbol
Parameter
FDP16N50
Unit
RθJC
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
0.63
0.5
3.3
--
°C/W
°C/W
°C/W
RθCS
RθJA
62.5
62.5
©2012 Fairchild Semiconductor Corporation
1
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Package Marking and Ordering Information
Device Marking
FDPF16N50
Device
FDPF16N50
FDPF16N50T
Package
TO-220F
TO-220F
Reel Size
Tape Width
Quantity
-
-
-
-
50
50
FDPF16N50T
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min. Typ. Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA
D = 250μA, Referenced to 25°C
500
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
0.5
V/°C
/
ΔTJ
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
DS = 400V, TC = 125°C
--
--
--
--
1
10
μA
μA
V
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
3.0
--
--
5.0
0.38
--
V
Ω
S
Static Drain-Source
On-Resistance
V
GS = 10V, ID = 8A
0.31
23
gFS
Forward Transconductance
VDS = 40V, ID = 8A
(Note 4)
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
1495
235
20
1945
310
30
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 250V, ID = 16A
RG = 25Ω
--
--
--
--
--
--
--
40
150
65
90
310
140
170
45
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
(Note 4, 5)
80
ns
Qg
VDS = 400V, ID = 16A
32
nC
nC
nC
V
GS = 10V
Qgs
Qgd
8.5
14
--
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
9.2
37
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 16A
--
V
VGS = 0V, IS = 16A
490
5.0
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.5mH, I = 16A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 16A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
102
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
100
10-1
Bottom : 5.5 V
101
150oC
25oC
-55oC
* Notes :
1. 250μs Pulse Test
* Notes :
1. VDS = 40V
o
2. TC = 25
C
2. 250μs Pulse Test
10 12
100
10-1
100
101
2
4
6
8
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.6
0.5
VGS = 10V
101
0.4
VGS = 20V
150oC
0.3
25oC
* Notes :
1. VGS = 0V
o
* Note : TJ = 25 C
2. 250μs Pulse Test
100
0.2
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0
5
10
15
20
25
30
35
40
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
12
C
iss = Cgs + Cgd (Cds = shorted)
oss = Cds + Cgd
Crss = Cgd
C
VDS = 100V
VDS = 250V
VDS = 400V
10
8
3000
2000
1000
0
Coss
6
C
iss
4
* Note :
1. VGS = 0 V
C
rss
2. f = 1 MHz
2
* Note : ID = 16A
0
10-1
100
101
0
10
20
30
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
1. VGS = 0 V
0.9
0.8
* Notes :
1. VGS = 10 V
2. ID = 250μA
0.5
2. ID = 8 A
0.0
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9-1. Maximum Safe Operating Area
- FDP16N50
Figure 9-2. Maximum Safe Operating Area
- FDPF16N50 / FDPF16N50T
102
102
101
100
10-1
10-2
10 μs
10 μs
100 μs
100 μs
101
1 ms
1 ms
10 ms
100 ms
10 ms
Operation in This Area
is Limited by R DS(on)
DC
Operation in This Area
is Limited by R DS(on)
100 ms
100
DC
-1
10
* Notes :
* Notes :
1. TC = 25 o
C
1. TC = 25 o
2. TJ = 150 o
C
C
2. TJ = 150 o
C
3. Single Pulse
3. Single Pulse
-2
10
100
101
102
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Currentvs. Case Temperature
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
4
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP16N50
1 00
D =0 .5
0 .2
10 -1
0.1
PDM
0 .0 5
0 .02
t1
t2
*
N o te s
:
o
0.01
1 . Z θ JC (t)
=
0.63 C /W M ax.
2 . D u ty F actor, D = t1/t2
10 -2
3 . T JM
-
T C
=
P D M
* Z θ JC (t)
sing le p ulse
10 -3
1 0-5
1 0-4
10 -2
10 -1
1 00
10 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
Figure 11-2. Transient Thermal Response Curve - FDPF16N50 / FDPF16N50T
D =0 .5
1 00
0 .2
0 .1
0 .0 5
PDM
10 -1
0 .0 2
t1
0.01
t2
*
N o te s
1 . Z θ JC (t)
2 . D u ty F actor, D = t1/t2
:
o
3.3 C /W M ax.
=
10 -2
1 0-5
sing le pu lse
3 . T JM
-
T C
=
P D M
1 00
* Z θ JC (t)
1 0-4
10 -3
10 -2
10 -1
10 1
t1 , S q u a re W a ve P u lse D u ra tio n [se c]
5
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
6
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Peak Diode Recovery dv/dt Test Circuit & Waveforms
7
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Mechanical Dimensions
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
(30
°
)
#1
0.35 0.10
2.54TYP
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
[2.54 0.20
]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
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8
FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
Package Dimensions
TO-220F Potted
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
9
www.fairchildsemi.com
FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
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Datasheet contains the design specifications for product development. Specifications
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Rev. I61
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FDP16N50 / FDPF16N50 / FDPF16N50T Rev. C1
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