FDP16N50U [FAIRCHILD]
N-Channel UniFETTM Ultra FRFET MOSFET; N沟道UniFETTM超FRFET MOSFET
| 型号： | FDP16N50U |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel UniFETTM Ultra FRFET MOSFET |
| 文件： | 总9页 (文件大小：826K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2013
FDP16N50U / FDPF16N50UT
N-Channel UniFETTM Ultra FRFETTM MOSFET
500 V, 15 A, 480 mΩ
Features
Description
R
DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET
family based on planar stripe and DMOS technology. This MOSFET is
tailored to reduce on-state resistance, and to provide better switching
performance and higher avalanche energy strength. UniFET Ultra
FRFETTM MOSFET has much superior body diode reverse recovery
performance. Its trr is less than 50nsec and the reverse dv/dt immunity is
20V/nsec while normal planar MOSFETs have over 200nsec and 4.5V/
nsec respectively. Therefore UniFET Ultra FRFET MOSFET can remove
additional component and improve system reliability in certain
applications that require performance improvement of the MOSFET’s
body diode. This device family is suitable for switching power converter
applications such as power factor correction (PFC), flat panel display
(FPD) TV power, ATX and electronic lamp ballasts.
•
•
Low Gate Charge (Typ. 32 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
•
•
•
•
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
D
G
D
S
G
D
G
S
TO-220F
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP16N50U FDPF16N50UT Unit
Drain to Source Voltage
Gate to Source Voltage
500
±30
V
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
15
9
15*
9*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60
60*
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
610
15
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
20
mJ
V/ns
W
W/oC
oC
20
(TC = 25oC)
- Derate above 25oC
200
38.5
0.3
PD
Power Dissipation
1.59
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP16N50U FDPF16N50UT Unit
RJC
RCS
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Typ.
Thermal Resistance, Junction to Ambient, Max.
0.63
0.5
3.3
-
oC/W
62.5
62.5
1
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP16N50U
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP16N50U
FDPF16N50UT
-
-
-
-
50
50
FDPF16N50UT
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TJ = 25oC
500
-
-
-
-
V
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250A, Referenced to 25oC
0.5
V/oC
V
DS = 500V, VGS = 0V
-
-
-
-
-
-
25
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
VDS = 400V, TC = 125oC
250
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 7.5A
VDS = 40V, ID = 7.5A
3.0
-
-
5.0
0.48
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
0.37
23
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
1495
235
20
1945
310
30
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
32
45
VDS = 400V, ID = 15A
VGS = 10V
8.5
-
Qgd
Gate to Drain “Miller” Charge
-
14
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
40
150
65
90
ns
ns
ns
ns
VDD = 250V, ID = 15A
310
140
170
R
G = 25
80
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
15
60
1.6
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 15A
-
V
65
0.1
ns
C
VGS = 0V, ISD = 15A
dIF/dt = 100A/s
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.5mH, I = 15A, V = 50V, R = 25, Starting T = 25C
AS
DD
G
J
3. I 16A, di/dt 200A/s, V BV
, Starting T = 25C
SD
DD
DSS
J
4. Pulse Test: Pulse width 300s, Duty Cycle 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
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©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
2
10
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
1
10
Bottom: 5.5V
o
1
10
150 C
o
0
10
25 C
* Notes :
1. 250s Pulse Test
* Notes :
-1
10
1. VDS = 40V
2. 250s Pulse Test
o
2. TC = 25 C
0
10
-1
10
0
10
1
10
2
4
6
8
10
12
V , Drain-Source Voltage [V]
V , Gate-SourceVoltage[V]
DS
GS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.6
0.5
VGS = 10V
1
10
0.4
0.3
0.2
V
GS = 20V
o
150 C
o
25 C
* Notes :
1. VGS = 0V
o
* Note: T = 25 C
2. 250s Pulse Test
J
0
10
0
5
10
15
20
25
30
35
40
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
12
Ciss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + C
gd
C
rss = C
gd
V
DS = 100V
DS = 250V
DS = 400V
10
8
3000
2000
1000
0
V
C
oss
V
C
iss
6
* Note :
1. VGS = 0 V
4
C
rss
2. f =1MHz
2
* Note: ID= 15A
30
-1
0
1
10
10
10
0
V , Drain-Source Voltage [V]
0
10
20
40
DS
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©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDPF16N50UT
1.2
1.1
1.0
2
10
10 s
100 s
1 ms
10 ms
100 ms
DC
1
10
Operation in This Area
is Limited by R DS(on)
0
10
* Notes :
1. VGS = 0 V
0.9
0.8
-1
* Notes :
10
1. T = 25 oC
2. ID= 250A
C
2. T = 150 oC
J
3. SinglePulse
-2
10
-100
-50
0
50
100
150
200
0
10
1
10
2
10
T, Junction Temperature [oC]
J
V , Drain-Source Voltage [V]
DS
Figure 9. Maximum Drain Current
vs. Case Temperature - FDPF16N50UT
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
Figure 10. Transient Thermal Response Curve - FDPF16N50UT
D=0.5
100
0.2
0.1
0.05
PDM
10-1
t1
0.02
0.01
t2
* Notes :
o
1. ZJC(t) = 3.3 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZJC(t)
10-2
10-5
single pulse
10-4
10-3
10-2
10-1
100
101
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©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
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www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
6
Mechanical Dimensions
TO-220B03
Dimensions in Millimeters
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©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
7
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
6
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The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
FPS™
F-PFS™
FRFET
Global Power Resource
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Sync-Lock™
®*
®
tm
®
®
®
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
SM
TinyBoost™
TinyBuck™
TinyCalc™
®
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
®
Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™
®
TranSiC
®
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
SignalWise™
SmartMax™
TriFault Detect™
TRUECURRENT *
μSerDes™
®
SMART START™
Solutions for Your Success™
®
®
SPM
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild
®
®
UHC
®
Fairchild Semiconductor
FACT Quiet Series™
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
FACT
FAST
®
®
®
OPTOLOGIC
OPTOPLANAR
SupreMOS
SyncFET™
FastvCore™
FETBench™
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I64
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©2009 Fairchild Semiconductor Corporation
FDP16N50U / FDPF16N50UT Rev. C0
9
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