FDP15N40 [FAIRCHILD]
N-Channel MOSFET 400V, 15A, 0.3Ω; N沟道MOSFET 400V , 15A , 0.3Ω型号: | FDP15N40 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | N-Channel MOSFET 400V, 15A, 0.3Ω |
文件: | 总9页 (文件大小:251K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
October 2008
UniFETTM
FDP15N40 / FDPF15N40
tm
N-Channel MOSFET
400V, 15A, 0.3Ω
Features
Description
•
•
•
•
•
•
•
RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A
Low Gate Charge ( Typ. 28nC)
Low Crss ( Typ. 17pF)
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power
factor correction.
Fast Switching
100% Avalanche Tested
Improved dv/dt Capability
RoHS Compliant
D
G
TO-220F
FDPF Series
TO-220
FDP Series
G D S
G
D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
Parameter
FDP15N40
FDPF15N40
400
Units
Drain to Source Voltage
Gate to Source Voltage
V
V
±30
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
15
9
15*
9*
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
60
60*
A
mJ
A
EAS
IAR
Single Pulsed Avalanche Energy
Avalanche Current
731
15
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
17
mJ
V/ns
W
W/oC
oC
15
(TC = 25oC)
- Derate above 25oC
170
40
PD
Power Dissipation
1.45
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
FDP15N40
0.7
FDPF15N40
Units
RθJC
RθCS
RθJA
3.0
-
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
0.5
oC/W
62.5
62.5
©2008 Fairchild Semiconductor Corporation
FDP15N40 / FDPF15N40 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
FDP15N40
Device
Package
TO-220
Reel Size
Tape Width
Quantity
FDP15N40
FDPF15N40
-
-
-
-
50
50
FDPF15N40
TO-220F
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TJ = 25oC
400
-
-
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
I
D = 250μA, Referenced to 25oC
0.5
V/oC
V
DS = 400V, VGS = 0V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 320V, TC = 125oC
10
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250μA
VGS = 10V, ID = 7.5A
VDS = 20V, ID = 7.5A
3.0
-
-
5.0
0.3
-
V
Ω
S
Static Drain to Source On Resistance
Forward Transconductance
0.24
15.3
(Note 4)
-
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
1310
210
17
1750
280
25
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
28
36
V
V
DS = 320V, ID = 15A
GS = 10V
8
-
Qgd
Gate to Drain “Miller” Charge
-
12
-
nC
(Note 4, 5)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
26
55
72
40
62
120
154
90
ns
ns
ns
ns
VDD = 200V, ID = 15A
G = 25Ω
R
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
15
60
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 15A
-
V
333
3.24
ns
μC
VGS = 0V, ISD = 15A
dIF/dt = 100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 6.5mH, I = 15A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3:
I
≤ 15A, di/dt ≤ 200A/μs, V ≤ BV , Starting T = 25°C
SD
DD
DSS J
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
60
40
VGS = 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
150oC
10
-55oC
25oC
1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
0.2
0.1
1
4
5
6
7
8
1
10
VGS,Gate-Source Voltage[V]
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
80
0.50
0.45
0.40
150oC
10
25oC
0.35
VGS = 10V
1
0.30
VGS = 20V
*Notes:
1. VGS = 0V
0.25
*Note: TJ = 25oC
2. 250μs Pulse Test
0.1
0.2
0.20
0.4
0.6
0.8
1.0
1.2 1.3
0
10
20
30
40
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10
3000
C
C
C
= C + C (C = shorted)
gs gd ds
VDS = 100V
VDS = 200V
iss
= C + C
ds gd
oss
rss
= C
gd
VDS = 320V
8
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
2000
1000
0
Ciss
Coss
Crss
10
*Note: ID = 15A
20 25
0
5
10
15
30
30
0.1
1
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
1.2
1.1
1.0
2.5
2.0
1.5
1.0
0.5
0.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250μA
2. ID = 7.5A
0.8
-75
-75
-25
25
75
125
175
-25
25
75
125
175
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
- FDP15N40
Figure 10. Maximum Safe Operating Area
16
100
30μs
100μs
1ms
12
8
10
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
4
0.1
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
0
0.01
25
50
75
100
125
150
1
10
100
800
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve - FDP15N40
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
0.02
*Notes:
0.01
0.01
1. ZθJC(t) = 0.7oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.002
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration [sec]
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
D
U
T
V
D
S
_
I
S
D
L
D
r i v
e
r
R
G
S
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T
y
p
e
V
a
s
D
U
T
D
D
V
G
S
•
d
v
/ d
c
t
c
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t r o l l e
d
b
y
R
G
•
I S
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t r o l l e
d
b
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p
u
l s
e
p
e
r i o
d
D
G
a
t e
P
u
l s
e
W
i d t h
V
- - - - - - - - - - - - - - - - - - - - - - - - - -
D
=
G
S
G
a
t e
P
u
l s
e
P
e
r i o
d
1
0
V
(
D
r i v
e
r
)
I F
,
B
o
d
y
D
i o
d
e
F
o
r w
a
r d
C
u
r r e
n
t
M
I
S
D
d
i / d
t
(
D
U
T
)
I R
d
M
B
o
d
y
D
e
i o
R
e
R
e
v
e
r s
d
e
C
u
r r e
n
t
V
D
S
(
D
U
T
)
B
o
d
y
S
D
i o
d
e
c
o
v
e
r y
v
/ d
t
V
V
D
D
D
B
o
d
y
D
i o
d
e
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
6
Mechanical Dimensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
–0.05
1.30
ø3.60 ±0.10
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20]
[2.54 ±0.20]
10.00 ±0.20
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
7
Mechanical Dimensions
TO-220F
2.54 ±0.20
10.16 ±0.20
ø3.18 ±0.10
(7.00)
(0.70)
(1.00x45°)
MAX1.47
0.80 ±0.10
(30
°
)
#1
0.35 ±0.10
+0.10
–0.05
0.50
2.76 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
9.40 ±0.20
Dimensions in Millimeters
www.fairchildsemi.com
FDP15N40 / FDPF15N40 Rev. A
8
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Definition
Datasheet contains the design specifications for product development. Specifications
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Full Production
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Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I37
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FDP15N40 / FDPF15N40 Rev. A
9
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