FDP150N10 [FAIRCHILD]
N-Channel PowerTrench㈢ MOSFET 100V, 57A, 15mヘ; N沟道MOSFET PowerTrench㈢ ？ 100V ， 57A ， 15米ヘ
| 型号： | FDP150N10 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench㈢ MOSFET 100V, 57A, 15mヘ |
| 文件： | 总8页 (文件大小：512K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2008
FDP150N10
N-Channel PowerTrench MOSFET
100V, 57A, 15mΩ
tm
®
Features
General Description
•
•
•
•
•
•
RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Fast switching speed
Low gate charge
High performance trench technology for extremely low RDS(on)
High power and current handling capability
RoHS compliant
Application
•
DC to DC convertors / Synchronous Rectification
D
G
TO-220
FDP Series
G
D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
Parameter
Ratings
100
Units
V
Drain to Source Voltage
Gate to Source Voltage
±20
V
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
57
A
ID
Drain Current
40
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 3)
228
A
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
132
mJ
V/ns
W
W/oC
oC
7.5
(TC = 25oC)
- Derate above 25oC
110
PD
Power Dissipation
0.88
-55 to +150
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
oC
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
1.13
Units
RθJC
RθCS
RθJA
0.5
oC/W
62.5
©2008 Fairchild Semiconductor Corporation
FDP150N10 Rev. A
1
www.fairchildsemi.com
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDP150N10
FDP150N10
TO-220
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V, TC= 25oC
100
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250µA, Referenced to 25oC
-
-
0.1
V/oC
V
DS = 100V, VGS = 0V
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
µA
VDS = 100V, VGS = 0V, TC = 150oC
-
-
500
±100
VGS = ±20V, VDS = 0V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250µA
2.5
-
4.5
15
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
VGS = 10V, ID = 49A
-
-
12
VDS = 20V, ID = 49A
(Note 4)
156
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
3580
340
4760
450
pF
pF
pF
VDS = 25V, VGS = 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
140
210
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
-
-
-
-
-
-
-
47
164
86
104
338
182
176
69
-
ns
ns
VDD = 50V, ID = 49A
Turn-On Rise Time
V
GS = 10V, RGEN = 25Ω
Turn-Off Delay Time
ns
Turn-Off Fall Time
83
ns
(Note 4, 5)
(Note 4, 5)
Qg(tot)
Qgs
Qgd
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
53
nC
nC
nC
V
V
DS = 80V, ID = 49A
GS = 10V
19
15
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
57
228
1.3
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 49A
-
V
41
70
ns
nC
VGS = 0V, ISD = 49A
dIF/dt = 100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.11mH, I = 49A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3:
I
≤ 49A, di/dt ≤ 200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDP150N10 Rev. A
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
500
VGS = 15.0 V
*Notes:
1. VDS = 20V
10.0 V
8.0 V
7.0 V
2. 250µs Pulse Test
100
6.5 V
6.0 V
5.5 V
100
150oC
25oC
10
10
2
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
-55oC
0.1
1
10
1
0.02
3
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
30
25
20
15
10
5
500
150oC
100
25oC
VGS = 10V
10
VGS = 20V
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250µs Pulse Test
1
0.2
0
100
200
300
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
5000
10
*Note:
1. VGS = 0V
Ciss
VDS = 25V
VDS = 50V
2. f = 1MHz
4000
3000
2000
1000
0
8
6
4
2
0
VDS = 80V
Coss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
= C
gd
oss
rss
gd
Crss
*Note: ID = 49A
0.1
1
10
30
0
10
20
30
40
50
60
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDP150N10 Rev. A
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.4
1.15
1.10
1.05
1.00
2.0
1.6
1.2
*Notes:
1. VGS = 0V
2. ID = 250uA
*Notes:
1. VGS = 10V
0.8
0.95
0.90
2. ID = 49A
0.4
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
500
70
60
50
40
30
20
10
0
10µs
100
100µs
1ms
10ms
10
DC
Operation in This Area
is Limited by R DS(on)
1
*Notes:
1. TC = 25oC
0.1
2. TJ = 150oC
3. Single Pulse
0.01
1
10
100
200
25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
2
1
0.5
0.2
PDM
0.1
t1
0.1
t2
0.05
*Notes:
0.02
0.01
1. ZθJC(t) = 1.13oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
10-5
10-4
10-3
10-2
10-1
1
10
Rectangular Pulse Duration [sec]
FDP150N10 Rev. A
www.fairchildsemi.com
4
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP150N10 Rev. A
www.fairchildsemi.com
5
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
FDP150N10 Rev. A
www.fairchildsemi.com
6
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP150N10 Rev. A
www.fairchildsemi.com
7
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properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
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2. A critical component in any component of a life support,
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
Formative or In Design
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changes at any time without notice to improve design.
Preliminary
First Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
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Obsolete
Full Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I34
8
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FDP150N10 Rev. A
相关型号：
FDP15N50_NL
Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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