FDP075N15A_F102 [FAIRCHILD]
Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3;
| 型号： | FDP075N15A_F102 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：686K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
December 2013
FDP075N15A / FDB075N15A
®
N-Channel PowerTrench MOSFET
150 V, 130 A, 7.5 mΩ
Features
Description
•
•
•
•
RDS(on) = 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench® process that has been tai-
lored to minimize the on-state resistance while maintaining
superior switching performance.
Fast Switching
Low Gate Charge
High Performance Trench Technology for Extremely Low
RDS(on)
•
•
High Power and Current Handling Capability
RoHS Compliant
Applications
•
•
•
•
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
D
D
G
G
G
D
S
D2-PAK
S
TO-220
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
FDP075N15A_F102
FDB075N15A
Symbol
VDSS
VGSS
Parameter
Unit
Drain to Source Voltage
Gate to Source Voltage
150
±20
V
V
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
130*
92
ID
Drain Current
A
IDM
Drain Current
(Note 1)
(Note 2)
(Note 3)
522
A
mJ
EAS
dv/dt
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
588
6.0
V/ns
W
W/oC
oC
(TC = 25oC)
- Derate Above 25oC
333
PD
Power Dissipation
2.22
-55 to +175
300
TJ, TSTG
TL
Operating and Storage Temperature Range
oC
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
* Package limitation current is 120 A.
Thermal Characteristics
Symbol
FDP075N15A_F102
FDB075N15A
Parameter
Unit
RθJC
RθJA
Thermal Resistance, Junction to Case, Max.
0.45
62.5
40
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient, D2-PAK (1 in2 Pad of 2-oz Copper), Max.
oC/W
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
1
Package Marking and Ordering Information
Part Number
FDP075N15A_F102
FDB075N15A
Top Mark
Package
TO-220
D2-PAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
FDP075N15A
FDB075N15A
Tape and Reel
330 mm
24 mm
800 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
D = 250 μA, Referenced to 25oC
DS = 120 V, VGS = 0 V
150
-
-
-
-
V
ΔBVDSS
/ ΔTJ
Breakdown Voltage Temperature
Coefficient
I
0.1
V/oC
V
-
-
-
-
-
-
1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
μA
VDS = 120 V, TC = 150oC
500
±100
VGS = ±20 V, VDS = 0 V
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 100 A
VDS = 10 V, ID = 100 A
2.0
-
4.0
7.5
-
V
mΩ
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
6.25
164
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
-
-
-
-
5525
516
21
7350
pF
pF
pF
pF
nC
nC
nC
nC
Ω
VDS = 75 V, VGS = 0 V,
f = 1 MHz
Coss
Crss
Output Capacitance
685
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
-
Coss(er)
Qg(tot)
Qgs
VDS = 75 V, VGS = 0 V
909
77
-
100
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
26
-
-
-
-
VDS = 75 V, ID = 100 A,
V
GS = 10 V
Qgs2
Qgd
11
(Note 4)
16
ESR
f = 1 MHz
2.29
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
28
37
62
21
66
84
ns
ns
ns
ns
VDD = 75 V, ID = 100 A,
V
GS = 10 V, RG = 4.7 Ω
134
52
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
130*
520
1.25
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0 V, ISD = 100 A
-
V
97
264
ns
nC
V
GS = 0 V, VDD = 75 V, ISD = 100 A,
dIF/dt = 100 A/μs
Qrr
Reverse Recovery Charge
-
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting T = 25°C, L = 3 mH, I = 19.8 A.
J
AS
3. I ≤ 100 A, di/dt ≤ 200 A/μs, V ≤ BV
, starting T = 25°C.
J
SD
DD
DSS
4. Essentially independent of operating temperature typical characteristics.
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
400
400
VGS = 15.0V
*Notes:
1. VDS = 10V
10.0V
8.0V
7.0V
6.5V
2. 250μs Pulse Test
100
6.0V
5.5V
5.0V
175oC
100
25oC
-55oC
10
*Notes:
1. 250μs Pulse Test
10
7
2. TC = 25oC
1
0.1
1
3
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
400
10
8
100
175oC
VGS = 10V
25oC
10
VGS = 20V
6
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250μs Pulse Test
1
0.0
4
0.5
1.0
1.5
0
100
200
300
400
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
VDS = 30V
Ciss
VDS = 75V
8
6
4
2
0
V
DS = 120V
1000
100
10
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds
oss
rss
gd
= C
gd
*Note: ID = 100A
60
0.1
1
10
100 200
0
30
90
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.10
1.05
1.00
0.95
*Notes:
1. VGS = 10V
*Notes:
1. VGS = 0V
0.5
2. ID = 100A
2. ID = 250μA
0.0
-100
0.90
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
140
VGS = 10V
120
100μs
100
100
1ms
Limited by package
80
10
10ms
Operation in This Area
100ms
DC
is Limited by R DS(on)
60
40
1
0.1
*Notes:
1. TC = 25oC
2. TJ = 175oC
RθJC = 0.45oC/W
20
3. Single Pulse
0.01
0
25
0.1
1
10
100 300
50
75
100
125
150
175
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
Figure 11. Eoss vs. Drain to Source Voltage
Figure 12. Unclamped Inductive
Switching Capability
7
6
5
4
3
2
1
0
50
If R = 0
tAV = (L)(IAS)/(1.3*Rated BVDSS-VDD
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*Rated BVDSS-VDD)+1]
)
Starting TJ = 25oC
10
Starting TJ = 150oC
1
0.01
0
25
50
75
100
125
150
0.1
1
10
100
500
VDS, Drain to Source Voltage [V]
tAV, Time In Avalanche [ms]
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
4
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
0.001
*Notes:
1. ZθJC(t) = 0.45oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
10-5
10-4
10-3
10-2
10-1
1
t , Rectangular Pulse Duration [sec]
1
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
5
I
= const.
G
Figure 14. Gate Charge Test Circuit & Waveform
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
Figure 15. Resistive Switching Test Circuit & Waveforms
VGS
Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
6
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
7
Mechanical Dimensions
Figure 18. TO-220, Molded, 3-Lead, Jedec Variation AB (Delta)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
8
Mechanical Dimensions
2
Figure 19. TO263 (D PAK), Molded, 2-Lead, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
9
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
tm
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
μSerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
www.fairchildsemi.com
©2011 Fairchild Semiconductor Corporation
FDP075N15A / FDB075N15A Rev. C4
10
相关型号：
FDP085N10A_F102
Power Field-Effect Transistor, 96A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明