FDP090N10 [ONSEMI]
N 沟道 PowerTrench® MOSFET 100V，75A，9mΩ;
| 型号： | FDP090N10 |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道 PowerTrench® MOSFET 100V，75A，9mΩ 局域网 PC 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：466K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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2014 年 1 月
FDP090N10
N 沟道 PowerTrench MOSFET
100 V， 75 A， 9 m
®
特性
说明
此 N 沟道 MOSFET 采用飞兆半导体先进的 PowerTrench® 工艺
生产，这一先进工艺是专为最大限度地降低导通电阻并保持卓越
开关性能而定制的。
•
•
•
•
•
•
RDS(on) = 7.2 m (Typ.)@VGS = 10 V, ID = 75 A
快速开关速度
低栅极电荷
应用
高性能沟道技术可实现极低的 RDS(on)
高功率和高电流处理能力
符合 RoHS 标准
•
•
•
•
用于 ATX/ 服务器 / 通信 PSU 的同步整流
电池保护电路
电机驱动和不间断电源
微型光伏逆变器
D
G
D
S
G
TO-220
S
MOSFET 最大额定值 TC = 25°C 除非另有说明。
FDP090N10
符号
VDSS
VGSS
ID
参数
单位
100
±20
75
V
漏极－源极电压
栅极－源极电压
漏极电流
V
A
- 连续 (TC=85°C)
- 脉冲
IDM
300
309
75
A
漏极电流
（说明 1）
（说明 2）
（说明 1）
（说明 1）
（说明 3）
EAS
IAR
mJ
A
单脉冲雪崩能量
雪崩电流
EAR
dv/dt
20.8
5.6
mJ
V/ns
W
重复雪崩能量
峰值二极管恢复 dv/dt
(TC = 25°C)
208
1.39
PD
功耗
W/°C
°C
- 降额 25°C 以上
TJ, TSTG
TL
工作和存储温度范围
-55 至 +175
300
°C
用于焊接的最大引脚温度，距离外壳 1/8"，持续 5 秒
热性能
FDP090N10
0.72
符号
RJC
参数
结至外壳热阻最大值
单位
°C/W
RJA
结至环境热阻最大值
62.5
www.fairchildsemi.com
©2008 飞兆半导体公司
1
FDP090N10 Rev. C4
封装标识与定购信息
器件编号
顶标
FDP090N10
封装
包装方法
塑料管
卷尺寸
不适用
带宽
数量
FDP090N10
TO-220
不适用
50 个
电气特性 TC = 25°C 除非另有说明。
符号
参数
测试条件
最小值 典型值 最大值 单位
关断特性
BVDSS
ID = 250 A, VGS = 0 V, TC = 25°C
ID = 250 A，参考条件是 25°C
100
-
-
-
-
V
漏极－源极击穿电压
BVDSS
/ TJ
0.1
V/°C
击穿电压温度系数
VDS = 100 V, VGS = 0 V
-
-
-
-
-
-
1
IDSS
IGSS
A
零栅极电压漏极电流
VDS = 100 V, VGS = 0 V, TC = 150°C
VGS = ±20 V, VDS = 0 V
500
±100
nA
栅极 - 体漏电流
导通特性
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250 A
VGS = 10 V, ID = 75 A
VDS = 10 V, ID = 37.5 A
2.5
3.5
7.2
100
4.5
9
V
m
S
栅极阈值电压
-
-
漏极至源极静态导通电阻
正向跨导
-
动态特性
Ciss
Coss
Crss
-
-
-
6185
585
8225
775
pF
pF
pF
输入电容
VDS = 25 V, VGS = 0 V,
f = 1 MHz
输出电容
235
355
反向传输电容
开关特性
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
107
322
166
149
89
224
655
342
309
116
-
ns
ns
导通延迟时间
VDD = 50 V, ID = 75 A,
开通上升时间
V
GS = 10 V, RG = 25
ns
关断延迟时间
ns
关断下降时间
（说明 4）
（说明 4）
Qg(tot)
Qgs
Qgd
nC
nC
nC
10V 的栅极电荷总量
栅极 - 源极栅极电荷
栅漏极 “ 米勒 ” 电荷
V
V
DS = 50 V, ID = 75 A,
GS = 10 V
37
22
-
漏源极二极管特性
IS
-
-
-
-
-
-
-
75
300
1.25
-
A
A
漏源极二极管最大正向连续电流
漏源极二极管最大正向脉冲电流
漏源极二极管正向电压
反向恢复时间
ISM
VSD
trr
VGS = 0 V, ISD = 75 A
-
V
73
166
ns
nC
VGS = 0 V, ISD = 75 A,
dIF/dt = 100 A/s
Qrr
-
反向恢复电荷
注意：
1: 重复额定值：脉冲宽度受限于最大结温。
2: L = 0.11 mH， I = 75 A，V = 50 V，R = 25 ，启动 T = 25°C。
AS
DD
G
J
3:
I
75 A， di/dt 200 A/s， V BV
，开始 T =25°C。
SD
DD
DSS
J
4: 本质上独立于工作温度的典型特性。
www.fairchildsemi.com
©2008 飞兆半导体公司
FDP090N10 Rev. C4
2
典型性能特征
图 1. 导通区域特性
图 2. 传输特性
500
500
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
150oC
100
-55oC
25oC
5.5 V
100
10
2
*Notes:
1. 250s Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 20V
10
7
2. 250s Pulse Test
0.2
1
5
4
5
6
7
8
VDS,Drain-Source Voltage[V]
VGS,Gate-Source Voltage[V]
图 3. 导通电阻变化与漏极电流和栅极电压
的关系
图 4. 体二极管正向电压变化与源极电流
的关系和温度
0.020
500
0.015
100
150oC
VGS = 10V
25oC
0.010
VGS = 20V
0.005
10
*Notes:
1. VGS = 0V
*Note: TC = 25oC
300 400
2. 250s Pulse Test
0.000
3
0.0
0
100
200
0.5
1.0
1.5
VSD, Body Diode Forward Voltage [V]
ID, Drain Current [A]
图 5. 电容特性
图 6. 栅极电荷特性
10
9000
C
C
C
= C + C (C = shorted)
gs gd ds
iss
= C + C
ds gd
= C
gd
VDS = 25V
VDS = 50V
VDS = 80V
oss
rss
Ciss
7500
6000
4500
3000
1500
0
8
6
4
2
0
*Note:
1. VGS = 0V
2. f = 1MHz
Coss
Crss
*Note: ID = 75A
80
0
20
40
60
100
0.1
1
10
30
Qg, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
www.fairchildsemi.com
©2008 飞兆半导体公司
3
FDP090N10 Rev. C4
典型性能特征 （接上页）
图 7. 击穿电压变化图与温度的关系
图 8. 导通电阻变化与温度的关系
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
2. ID = 250A
2. ID = 75A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
图 9. 最大安全工作区
图 10. 最大漏极电流与壳体温度的关系
500
120
100
100s
100
80
60
40
20
0
1ms
10ms
10
100ms
DC
Operation in This Area
is Limited by R DS(on)
1
0.1
Limited by package
SINGLE PULSE
TC = 25oC
TJ = 175oC
RJC = 0.72oC/W
0.01
0.1
1
10
100
25
50
75
100
125
150
o
VDS, Drain-Source Voltage [V]
TC, Case Temperature [ C]
图 11. 瞬态热响应曲线
1
0.5
0.2
0.1
0.1
0.05
0.02
PDM
t1
t2
0.01
0.01
*Notes:
Single pulse
1. ZJC(t) = 0.72oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZJC(t)
0.001
10-5
10-4
10-3
10-2
10-1
100
101
Recangular Plse Duraton [se]
t1，矩形脉冲时间 [ 秒 ]
www.fairchildsemi.com
©2008 飞兆半导体公司
4
FDP090N10 Rev. C4
I = 恒流
G
图 12. 栅极电荷测试电路与波形
RL
VDS
90%
VDS
VDD
VGS
RG
10%
VGS
DUT
V
GS
td(on)
tr
td(off)
tf
t on
t off
图 13. 阻性开关测试电路与波形
VGS
图 14. 非箝位感性开关测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
5
FDP090N10 Rev. C4
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
图 15. 峰值二极管恢复 dv/dt 测试电路与波形
www.fairchildsemi.com
©2008 飞兆半导体公司
6
FDP090N10 Rev. C4
机械尺寸
图 16. TO-220，模塑， 3 引脚， Jedec 变化 AB
封装图纸作为一项服务，提供给考虑飞兆半导体元件的客户。具体参数可能会有变化，且不会做出相应通知。请注意图纸上的版本和 /
或日期，并联系飞兆半导体代表核实或获得最新版本。封装规格并不超出飞兆公司全球范围内的条款与条件，尤其指保修，保修涵盖飞
兆半导体的全部产品。
随时访问飞兆半导体在线封装网页，可以获取最新的封装图纸：
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-003
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©2008 飞兆半导体公司
7
FDP090N10 Rev. C4
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Rev. I66
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©2008 飞兆半导体公司
FDP090N10 Rev. C4
8
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specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
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