FDP083N15A [FAIRCHILD]
N-Channel PowerTrench® MOSFET 150V, 105A, 8.3m; N沟道MOSFET PowerTrench® 150V ， 105A ， 8.3米？
| 型号： | FDP083N15A |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | N-Channel PowerTrench® MOSFET 150V, 105A, 8.3m |
| 文件： | 总9页 (文件大小：564K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
April 2011
FDP083N15A_F102
N-Channel PowerTrench MOSFET
150V, 105A, 8.3mꢀ
®
Features
Description
•
•
•
•
R
= 6.85mꢀ ( Typ.)@ V = 10V, I = 75A
This N-Channel MOSFET is produced using Fairchild
Semi-
DS(on)
GS
D
conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Fast Switching Speed
Low Gate Charge
High Performance Trench Technology for Extremely Low
R
Application
DS(on)
•
•
•
•
•
DC to DC Converters
•
•
High Power and Current Handling Capability
RoHS Compliant
Synchronous Rectification for Server/Telecom PSU
Battery Charger
AC motor drives and Uninterruptible Power Supplies
Off-line UPS
D
G
TO-220
G
D
S
S
o
MOSFET Maximum Ratings T = 25 C unless otherwise noted
C
Symbol
Parameter
Ratings
150
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
V
V
DSS
GSS
±20
o
- Continuous (T = 25 C, Silicon Limited)
105
C
I
I
Drain Current
A
D
o
- Continuous (T = 100 C, Silicon Limited)
75
C
Drain Current
- Pulsed
(Note 1)
(Note 2)
(Note 3)
420
A
mJ
V/ns
W
DM
E
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
542
AS
dv/dt
6.0
o
(T = 25 C)
231
C
P
Power Dissipation
D
o
o
- Derate above 25 C
1.54
W/ C
o
T , T
Operating and Storage Temperature Range
-55 to +175
C
J
STG
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
T
300
C
L
*Package limitation current is 120A.
Thermal Characteristics
Symbol
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
0.65
Units
R
R
θJC
θJA
o
C/W
62.5
©2011 Fairchild Semiconductor Corporation
FDP083N15A_F102 Rev. A2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Device Marking
Device
Package
Description
Quantity
FDP083N15A
FDP083N15A_F102
TO-220
F102: Trimmed Leads
50
o
Electrical Characteristics T = 25 C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
o
BV
Drain to Source Breakdown Voltage
I
I
= 250ꢁA, V = 0V, T = 25 C
150
-
-
-
-
V
DSS
D
D
GS
C
ꢂBV
ꢂT
Breakdown Voltage Temperature
Coefficient
o
o
DSS
= 250ꢁA, Referenced to 25 C
0.08
V/ C
J
V
V
V
= 120V, V = 0V
-
-
-
-
-
-
1
DS
DS
GS
GS
I
I
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ꢁA
DSS
GSS
o
= 120V, T = 150 C
500
±100
C
= ±20V, V = 0V
nA
DS
On Characteristics
V
Gate Threshold Voltage
V
V
V
= V , I = 250ꢁA
2.0
-
4.0
8.30
-
V
mꢀ
S
GS(th)
GS
GS
DS
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10V, I = 75A
-
-
6.85
139
DS(on)
FS
D
g
= 10V, I = 75A
(Note 4)
D
Dynamic Characteristics
C
C
C
Input Capacitance
-
-
-
-
-
-
-
-
4645
1445
100
6040
pF
pF
pF
nC
nC
nC
nC
ꢀ
iss
V
= 25V, V = 0V
GS
DS
Output Capacitance
1880
oss
rss
f = 1MHz
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance(G-S)
-
84
-
Q
Q
Q
Q
64.5
19.1
8.7
g(tot)
gs
V
V
= 75V, I = 75A
D
= 10V
DS
GS
-
gs2
gd
13.5
2.5
-
ESR
Drain Open, f=1MHz
-
Switching Characteristics
t
t
t
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
22
58
61
26
54
126
132
62
ns
ns
ns
ns
d(on)
V
V
= 75V, I = 75A
D
r
DD
GS
= 10V, R
= 4.7ꢀ
GEN
d(off)
f
Drain-Source Diode Characteristics
I
I
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
105
420
1.25
-
A
A
S
SM
V
t
Drain to Source Diode Forward Voltage
Reverse Recovery Time
V
= 0V, I = 75A
-
V
SD
GS
SD
96
268
ns
nC
V
= 0V, I = 75A, V = 120V
rr
GS
SD
DD
dI /dt = 100A/ꢁs
Q
Reverse Recovery Charge
-
F
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting T = 25°C, L = 3 mH, I = 19 A
J
SD
3. I ≤ꢃ75A, di/dt ≤ 200A/ꢁs, V ≤ BV
, Starting T = 25°C
J
SD
DD
DSS
4. Pulse Test: Pulse width ≤ 300ꢁs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
www.fairchildsemi.com
FDP083N15A_F102 Rev. A2
2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
500
300
VGS = 10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
100
175oC
100
25oC
10
-55oC
*Notes:
1. 250ꢁs Pulse Test
2. TC = 25oC
*Notes:
1. VDS = 10V
2. 250ꢁs Pulse Test
10
0.1
1
1
10
2
3
4
5
6
VDS, Drain-Source Voltage[V]
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Drain Current and Gate Voltage
14
12
10
8
500
100
175oC
25oC
VGS = 10V
10
VGS = 20V
6
*Notes:
1. VGS = 0V
*Note: TC = 25oC
2. 250ꢁs Pulse Test
4
1
0.0
0
100
200
300
400
0.5
1.0
1.5
ID, Drain Current [A]
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
10000
10
Ciss
VDS = 30V
VDS = 75V
VDS = 120V
Coss
8
6
4
2
0
1000
Crss
*Note:
1. VGS = 0V
2. f = 1MHz
C
C
C
= C + C (C = shorted)
gs gd ds
iss
100
50
= C + C
ds
= C
gd
oss
rss
gd
*Note: ID = 75A
50
0.1
1
10
30
0
25
75
VDS, Drain-Source Voltage [V]
Qg, Total Gate Charge [nC]
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FDP083N15A_F102 Rev. A2
3
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.10
1.05
1.00
3.0
2.5
2.0
1.5
1.0
0.95
*Notes:
1. VGS = 0V
*Notes:
1. VGS = 10V
0.5
2. ID = 250ꢁA
2. ID = 75A
0.90
-100
0.0
-100
-50
0
50
100
150
200
-50
0
50
100
150 200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
120
100
80
60
40
20
0
10ꢁs
100ꢁs
100
1ms
10ms
10
Operation in This Area
DC
is Limited by R DS(on)
*Notes:
1
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
0.1
0.1
1
10
100 300
25
50
75
100
125
150
175
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Unclamped Inductive Switching
Capability
50
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD)
If R = 0
tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.001 0.01
tAV, TIME IN AVALANCHE (ms)
0.1
1
10
100
1000
www.fairchildsemi.com
FDP083N15A_F102 Rev. A2
4
Typical Performance Characteristics
Figure 12. Transient Thermal Response Curve
1
0.1
0.5
0.2
0.1
PDM
0.05
0.02
t1
t2
0.01
0.01
0.001
*Notes:
Single pulse
1. ZθJC(t) = 0.65oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-5
10-4
10-3
10-2
10-1
100
Rectangular Pulse Duration [sec]
FDP083N15A_F102 Rev. A2
5
www.fairchildsemi.com
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
www.fairchildsemi.com
FDP083N15A_F102 Rev. A2
6
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
_
I SD
L
Driver
RG
Same Type
as DUT
VDD
VGS
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I SD
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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FDP083N15A_F102 Rev. A2
7
Mechanical Dimensions
TO-220
(F102: Trimmed Leads)
Dimensions in Millimeters
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FDP083N15A_F102 Rev. A2
8
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intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
AX-CAP™*
Build it Now™
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CTL™
F-PFS™
Power-SPM™
PowerTrench®
PowerXS™
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The Right Technology for Your Success™
Global Power ResourceSM
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Green FPS™ e-Series™
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GTO™
IntelliMAX™
®
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TinyBoost™
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Quiet Series™
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TinyLogic®
™
Current Transfer Logic™
DEUXPEED®
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MegaBuck™
MICROCOUPLER™
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TRUECURRENT®*
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Saving our world, 1mW/W/kW at a time™
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MicroPak™
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®
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OPTOLOGIC®
OPTOPLANAR®
®
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*
®*
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
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First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I53
FDP083N15A_F102 Rev. A2
9
www.fairchildsemi.com
相关型号：
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FAIRCHILD
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