FCD4N60 [FAIRCHILD]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FCD4N60 |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总8页 (文件大小：986K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
October 2006
TM
SuperFET
FCD4N60
600V N-Channel MOSFET
Features
Description
•
•
•
•
•
650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
Typ. RDS(on) = 1.0Ω
Ultra low gate charge (typ. Qg = 12.8nC)
Low effective output capacitance (typ. Coss.eff = 32pF)
100% avalanche tested
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
D
G
D-PAK
FCD Series
G
S
S
Absolute Maximum Ratings
Symbol
Parameter
FCD4N60
Unit
VDSS
Drain-Source Voltage
Drain Current
600
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
3.9
2.5
A
A
(Note 1)
IDM
Drain Current
- Pulsed
A
11.7
± 30
128
3.9
VGSS
EAS
IAR
Gate-Source voltage
V
mJ
A
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
Avalanche Current
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
5.0
mJ
V/ns
4.5
Power Dissipation
(TC = 25°C)
50
W
- Derate above 25°C
0.4
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
Thermal Characteristics
Symbol
Parameter
FCD4N60
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.5
83
©2006 Fairchild Semiconductor Corporation
FCD4N60 Rev. B
1
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Package Marking and Ordering Information
Device Marking
FCD4N60
Device
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
FCD4N60TM
FCD4N60TF
FCD4N60
D-PAK
380mm
16mm
2000
Electrical Characteristics
T
= 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250μA, TJ = 25°C
VGS = 0V, ID = 250μA, TJ = 150°C
600
--
--
--
--
V
V
650
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25°C
--
--
0.6
--
--
V/°C
/
ΔTJ
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 3.9A
700
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
--
--
--
--
1
10
μA
μA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 2.0A
VDS = 40V, ID = 2.0A
3.0
--
--
5.0
1.2
--
V
Ω
S
Static Drain-Source
On-Resistance
1.0
3.2
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
--
--
415
210
19.5
12
540
275
--
pF
pF
pF
pF
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
16
--
Coss eff.
Effective Output Capacitance
32
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 300V, ID = 3.9A
RG = 25Ω
--
--
--
--
--
--
--
16
45
45
100
85
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
36
ns
(Note 4, 5)
30
70
ns
Qg
VDS = 480V, ID = 3.9A
VGS = 10V
12.8
2.4
7.1
16.6
--
nC
nC
nC
Qgs
Qgd
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
3.9
11.7
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 3.9A
--
V
VGS = 0V, IS = 3.9A
277
2.07
ns
μC
dIF/dt =100A/μs
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 1.9A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 3.9A, di/dt ≤ 200A/μs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FCD4N60 Rev. B
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
101
10
Top :
15.0 V
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
150oC
Bottom : 5.5 V
1
100
25oC
-55oC
* Notes :
1. 250μs Pulse Test
* Note
1. VDS = 40V
o
2. TC = 25 C
0.1
2. 250μs Pulse Test
10-1
0.1
1
10
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
4
3
101
VGS = 10V
2
100
150oC
VGS = 20V
25oC
1
* Notes :
1. VGS = 0V
* Note : TJ = 25oC
10.0
2. 250μs Pulse Test
10-1
0.2
0
0.0
2.5
5.0
7.5
12.5
0.4
0.6
0.8
1.0
1.2
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
1200
12
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 120V
Coss = Cds + Cgd
Crss = Cgd
VDS = 300V
VDS = 480V
1000
800
600
400
200
0
10
8
* Notes :
1. VGS = 0 V
6
4
2
Coss
Ciss
2. f = 1 MHz
* Note : ID = 3.9A
Crss
0
100
101
0
5
10
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3
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FCD4N60 Rev. B
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
*Notes :
1. VGS = 0 V
0.9
*Notes :
1. VGS = 10 V
2. ID = 250μA
2. ID = 2.0 A
0.8
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [οC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
101
10 us
100 us
1 ms
10 ms
100
DC
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
10-1
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11-1. Transient Thermal Response Curve
D=0.5
100
0.2
0.1
* Notes
:
1. ZθJC(t) = 2.5 oC/W Max.
2. D uty Factor, D =t1/t2
0.05
3. TJM - TC = PDM * ZθJC(t)
10-1
0.02
0.01
PDM
t1
t2
single pulse
10-2
10-5
10-4
10-3
10-2
10-1
100
101
t1, Square W ave Pulse Duration [sec]
4
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FCD4N60 Rev. B
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
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FCD4N60 Rev. B
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FCD4N60 Rev. B
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
7
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FCD4N60 Rev. B
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
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First Production
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supplementary data will be published at a later date.
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design.
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Obsolete
Full Production
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
8
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FCD4N60 Rev. B
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