FCD600N65S3R0 [ONSEMI]
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,6 A,600 mΩ,DPAK;型号: | FCD600N65S3R0 |
厂家: | ONSEMI |
描述: | 功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V,6 A,600 mΩ,DPAK |
文件: | 总10页 (文件大小:447K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
FCD600N65S3R0
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 6 A, 600 mW
Description
www.onsemi.com
SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate.
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
600 mW @ 10 V
6 A
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
D
Features
• 700 V @ T = 150°C
J
G
• Typ. R
= 493 mW
DS(on)
• Ultra Low Gate Charge (Typ. Q = 11 nC)
S
g
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 127 pF)
N-Channel MOSFET
oss(eff.)
D
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
G
S
Applications
D−PAK
TO−252
CASE 369AS
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
MARKING DIAGRAM
• Lighting / Charger / Adapter
$Y&Z&3&K
FCD600
N65S3R0
$Y
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
&Z
&3
&K
FCD600N65S3R0 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2017
1
Publication Order Number:
August, 2019 − Rev. 4
FCD600N65S3R0/D
FCD600N65S3R0
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise specified)
C
Symbol
Parameter
Value
Unit
V
V
DSS
V
GSS
Drain to Source Voltage
Gate to Source Voltage
650
DC
30
V
AC (f > 1 Hz)
30
V
I
D
Drain Current
Continuous (T = 25°C)
6
3.8
A
C
Continuous (T = 100°C)
C
I
Drain Current
Pulsed (Note 1)
15
A
mJ
A
DM
E
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
24
AS
AS
I
1.6
E
0.54
100
mJ
V/ns
AR
dv/dt
Peak Diode Recovery dv/dt (Note 3)
Power Dissipation
20
P
(T = 25°C)
54
W
W/°C
°C
D
C
Derate Above 25°C
0.43
−55 to +150
300
T , T
Operating and Storage Temperature Range
J
STG
T
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
°C
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I = 1.6 A, R = 25 W, starting T = 25°C.
AS
G
J
3. I ≤ 3 A, di/dt ≤ 200 A/ms, V ≤ 400 V, starting T = 25°C.
SD
DD
J
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
2.3
Unit
R
R
Thermal Resistance, Junction to Case, Max.
_C/W
q
JC
JA
Thermal Resistance, Junction to Ambient, Max. (Note 4)
52
q
2
4. Device on 1 in pad 2 oz copper pad on 1.5 x 1.5 in. board of FR−4 material.
PACKAGE MARKING AND ORDERING INFORMATION
†
Part Number
Top Marking
Package
Reel Size
Tape Width
Shipping (Qty / Packing)
FCD600N65S3R0
FCD600N65S3R0
D−PAK
(DPAK3 (TO−252 3LD))
(Pb−Free / Halogen Free)
330 mm
16 mm
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
FCD600N65S3R0
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain to Source Breakdown Voltage
650
700
−
−
−
−
−
−
V
V
V
V
I
= 0 V, I = 1 mA, T = 25_C
DSS
GS
D
J
= 0 V, I = 1 mA, T = 150_C
GS
D
J
DBV
/DT
Breakdown Voltage Temperature
Coefficient
= 1 mA, Referenced to 25_C
0.66
V/_C
DSS
J
D
I
Zero Gate Voltage Drain Current
V
DS
V
DS
V
GS
= 650 V, V = 0 V
−
−
−
−
0.3
−
1
mA
DSS
GS
= 520 V, T = 125_C
−
C
I
Gate to Body Leakage Current
=
30 V, V = 0 V
100
nA
GSS
DS
ON CHARACTERISTICS
V
Gate Threshold Voltage
V
GS
V
GS
V
DS
= V , I = 0.12 mA
2.5
−
−
4.5
600
−
V
mW
S
GS(th)
DS(on)
DS
D
R
Static Drain to Source On Resistance
Forward Transconductance
= 10 V, I = 3 A
493
3.6
D
g
FS
= 20 V, I = 3 A
−
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 400 V, V = 0 V, f = 1 MHz
−
−
−
−
−
−
−
−
465
10
−
−
−
−
−
−
−
−
pF
pF
pF
pF
nC
nC
nC
W
iss
DS
GS
C
Output Capacitance
oss
C
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
V
DS
V
DS
V
DS
= 0 V to 400 V, V = 0 V
127
17
oss(eff.)
GS
C
= 0 V to 400 V, V = 0 V
GS
oss(er.)
Q
= 400 V, I = 3 A, V = 10 V
11
g(tot)
D
GS
(Note 5)
Q
3
gs
Q
4.9
0.9
gd
ESR
f = 1 MHz
SWITCHING CHARACTERISTICS
t
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
V
= 400 V, I = 3 A,
−
−
−
−
11
9
−
−
−
−
ns
ns
ns
ns
d(on)
DD
GS
D
= 10 V, R = 4.7 W
g
t
r
(Note 5)
t
29
14
d(off)
t
f
SOURCE-DRAIN DIODE CHARACTERISTICS
I
Maximum Continuous Source to Drain Diode Forward Current
Maximum Pulsed Source to Drain Diode Forward Current
−
−
−
−
−
−
6
A
A
V
S
I
15
1.2
SM
V
SD
Source to Drain Diode Forward
Voltage
V
GS
= 0 V, I = 3 A
SD
t
Reverse Recovery Time
V
= 0 V, I = 3 A,
−
−
198
1.6
−
−
ns
rr
GS
F
SD
dI /dt = 100 A/ms
Q
Reverse Recovery Charge
mC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Essentially independent of operating temperature typical characteristics.
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3
FCD600N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS
30
10
20
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
*Notes:
1. V = 20 V
DS
10
2. 250 ms Pulse Test
150°C
5.5 V
1
0.1
25°C
1
−55°C
*Notes:
1. 250 ms Pulse Test
2. T = 25°C
C
0.01
0.1
0.2
1
10
3
4
5
6
7
8
9
V , Gate−Source Voltage [V]
GS
V , Drain−Source Voltage [V]
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.2
0.8
0.4
0.0
100
10
*Note: T = 25°C
*Notes:
C
1. V = 0 V
GS
2. 250 ms Pulse Test
150°C
1
V
GS
= 10 V
25°C
0.1
V
GS
= 20 V
−55°C
0.01
0.001
0
3
6
9
12
0.0
0.5
1.0
1.5
V
SD
, Body Diode Forward Voltage [V]
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
10
10000
*Note: I = 3 A
D
Ciss
Coss
Crss
8
6
1000
100
10
V
DS
= 130 V
V
DS
= 400 V
4
2
*Notes:
1 V = 0 V
GS
2. f = 1 MHz
C
C
C
= C + C (C = shorted)
gs gd ds
= C + C
= C
1
iss
oss
rss
ds
gd
gd
0
0.1
0.1
0
3
6
9
12
1
10
100
1000
Q , Total Gate Charge [nC]
g
V , Drain−Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
www.onsemi.com
4
FCD600N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
1.2
1.1
1.0
0.9
0.8
3.0
*Notes:
*Notes:
1. V = 10 V
1. V = 0 V
GS
GS
2.5
2. I = 3 A
D
2. I = 10 mA
D
2.0
1.5
1.0
0.5
0.0
−50
0
50
100
150
−50
0
50
100
150
T , Junction Temperature [5C]
J
T , Junction Temperature [5C]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variant vs. Temperature
8
6
4
2
0
30
10 ms
10
100 ms
1 ms
10 ms
DC
1
Operation in This Area
is Limited by R
DS(on)
0.1
0.01
*Notes:
1. T = 25°C
C
2. I = 10 mA
D
3. Single Pulse
1
10
100
1000
25
50
75
100
125
150
V , Drain−Source Voltage [V]
DS
T , Case Temperature [5C]
C
Figure 9. Maximum Safe Operation Area
Figure 10. Maximum Drain Current
vs. Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0
0
130
260
390
520
650
V , Drain−Source Voltage [V]
DS
Figure 11. EOSS vs. Drain to Source Voltage
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5
FCD600N65S3R0
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
2
1
DUTY CYCLE−DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
SINGLE PULSE
10−4
0.001
10−5
10−3
10−2
10−1
100
101
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Transient Thermal Response Curve
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6
FCD600N65S3R0
V
GS
R
Q
g
L
V
DS
Q
Q
gs
gd
V
GS
DUT
I
G
= Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
R
L
V
DS
GS
90%
90%
10%
90%
V
DS
V
DD
V
GS
R
G
10%
V
DUT
V
GS
t
r
t
f
t
t
d(off)
d(on)
t
on
t
off
Figure 14. Resistive Switching Test Circuit & Waveforms
L
2
1
2
EAS
+
@ LIAS
V
DS
BV
DSS
I
D
I
AS
R
G
V
DD
I (t)
D
DUT
V
DD
V
GS
V
DS
(t)
t
p
Time
t
p
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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7
FCD600N65S3R0
+
DUT
V
SD
−
I
SD
L
Driver
R
G
Same Type
as DUT
V
DD
V
GS
− dv/dt controlled by R
G
− I controlled by pulse period
SD
Gate Pulse Width
D +
Gate Pulse Period
V
GS
10 V
(Driver)
I
, Body Diode Forward Current
FM
I
di/dt
SD
(DUT)
I
RM
Body Diode Reverse Current
Body Diode Recovery dv/dt
V
DS
V
DD
V
SD
(DUT)
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
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8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK3 (TO−252 3 LD)
CASE 369AS
ISSUE A
DATE 28 SEP 2022
GENERIC
MARKING DIAGRAM*
XXXXXX
XXXXXX
AYWWZZ
XXXX = Specific Device Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON13810G
DPAK3 (TO−252 3 LD)
PAGE 1 OF 1
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the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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© Semiconductor Components Industries, LLC, 2019
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