FCD5N60TM [FAIRCHILD]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | FCD5N60TM |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总9页 (文件大小：961K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
July 2006
TM
SuperFET
FCD5N60 / FCU5N60
600V N-Channel MOSFET
Features
Description
•
•
•
•
•
650V @TJ = 150°C
SuperFETTM is, Farichild’s proprietary, new generation of high
voltage MOSFET family that is utilizing an advanced charge
balance mechanism for outstanding low on-resistance and
lower gate charge performance.
Typ. Rds(on)=0.81Ω
Ultra low gate charge (typ. Qg=16nC)
Low effective output capacitance (typ. Coss.eff=32pF)
100% avalanche tested
This advanced technology has been tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system
miniaturization and higher efficiency.
D
D
G
D-PAK
FCD Series
G D S
I-PAK
FCU Series
G
S
S
Absolute Maximum Ratings
Symbol
Parameter
FCD5N60 / FCU5N60
Unit
VDSS
Drain-Source Voltage
Drain Current
600
V
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
4.6
2.9
A
A
(Note 1)
(Note 2)
IDM
Drain Current
- Pulsed
A
13.8
± 30
2.9
4.6
5.4
20
VGSS
EAS
IAR
Gate-Source voltage
V
mJ
A
Single Pulsed Avalanche Energy
Avalanche Current
(Note 1)
(Note 1)
(Note 3)
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
Power Dissipation
(TC = 25°C)
54
W
- Derate above 25°C
0.43
W/°C
TJ, TSTG
TL
Operating and Storage Temperature Range
-55 to +150
300
°C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
°C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCD5N60/FCU5N60
Unit
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2.3
83
©2006 Fairchild Semiconductor Corporation
FCD5N60/FCU5N60 Rev. A0
1
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Package Marking and Ordering Information
Device Marking
FCD5N60
Device
FCD5N60TM
FCD5N60TF
FCU5N60
Package
D-PAK
Reel Size
380mm
380mm
--
Tape Width
Quantity
2500
16mm
16mm
--
FCD5N60
D-PAK
2000
FCU5N60
I-PAK
70
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Conditions
Min
Typ Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA, TJ = 25°C
VGS = 0V, ID = 250µA, TJ = 150°C
600
--
--
--
--
V
V
650
∆BVDSS
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
--
0.6
--
--
V/°C
/
∆TJ
BVDS
Drain-Source Avalanche Breakdown
Voltage
VGS = 0V, ID = 4.6A
700
V
IDSS
Zero Gate Voltage Drain Current
VDS = 600V, VGS = 0V
VDS = 480V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
--
--
--
--
100
nA
nA
-100
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.3A
VDS = 40V, ID = 2.3A
3.0
--
--
5.0
0.95
--
V
Ω
S
Static Drain-Source
On-Resistance
0.81
3.8
(Note 4)
gFS
Forward Transconductance
--
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
--
--
--
--
--
470
250
22
600
320
--
pF
pF
pF
pF
pF
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
VDS = 480V, VGS = 0V, f = 1.0MHz
VDS = 0V to 400V, VGS = 0V
12
--
Coss eff.
Effective Output Capacitance
32
--
Switching Characteristics
td(on) Turn-On Delay Time
tr
td(off)
tf
VDD = 300V, ID = 4.6A
RG = 25Ω
--
--
--
--
--
--
--
12
40
47
22
16
2.8
7
30
90
95
55
--
ns
ns
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ns
(Note 4, 5)
ns
Qg
VDS = 480V, ID = 4.6A
VGS = 10V
nC
nC
nC
Qgs
Qgd
--
--
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
--
--
--
4.6
13.8
1.4
--
A
A
ISM
VSD
trr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 4.6A
--
V
VGS = 0V, IS = 4.6A
295
2.7
ns
µC
dIF/dt =100A/µs
(Note 4)
Qrr
Reverse Recovery Charge
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I = 2.3A, V = 50V, R = 25Ω, Starting T = 25°C
AS
DD
G
J
3. I ≤ 4.6A, di/dt ≤ 1200A/µs, V ≤ BV
, Starting T = 25°C
SD
DD
DSS
J
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
2
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FCD5N60/FCU5N60 Rev. A0
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
101
101
100
10-1
Bottom : 5.5 V
150oC
25oC
100
-55oC
* Note
1. VDS = 40V
* Notes :
1. 250µs Pulse Test
2. TC = 25oC
2. 250µs Pulse Test
10-1
2
4
6
8
10
10-1
100
101
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
3.0
2.5
101
VGS = 10V
2.0
1.5
1.0
0.5
150oC
25oC
100
-55oC
VGS = 20V
* Note
1. VDS = 40V
* Note : TJ = 25oC
12.5
2. 250µs Pulse Test
0.0
2.5
5.0
7.5
10.0
15.0
10-1
2
4
6
8
10
ID, Drain Current [A]
VGS , Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
12
10
8
1500
Ciss = Cgs + Cgd (Cds = shorted)
VDS = 100V
Coss = Cds + Cgd
VDS = 250V
VDS = 400V
Crss = Cgd
*Notes :
1. VGS = 0 V
1000
500
0
2. f = 1 MHz
Coss
6
4
Ciss
2
Crss
* Note : ID = 4.6A
0
0
5
10
15
100
101
QG, Total Gate Charge [oC]
VDS, Drain-Source Voltage [V]
3
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FCD5N60/FCU5N60 Rev. A0
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
1.2
1.1
1.0
* Notes :
0.9
0.8
1. VGS = 0 V
* Notes :
1. VGS = 10V
2. ID = 250µA
0.5
2. ID = 2.3A
0.0
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
5
4
3
2
1
0
102
101
100
10-1
10-2
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
100 ms
DC
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [oC]
VDS, Drain-Source Voltage [V]
Figure 11. Transient Thermal Response Curve
D
= 0 . 5
0 . 2
0
1
0
*
N
o
.
t e
Z
s
:
1
( t )
C
=
a
2
. 3 o C / W
M
a
x .
θ
J
0 . 1
2
3
.
D
T
u
t y
F
c
t o r ,
D
=
t 1 / t 2
Z ( t )
θ J C
0 . 0 5
.
-
T
=
P
*
J
M
C
D
M
- 1
0 . 0 2
0 . 0 1
1
0
PDM
t1
s i n g l e p u l s e
t2
- 2
1
0
- 5
- 4
- 3
- 2
- 1
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1 0
t 1
,
S q u a r e
W
a v e P u l s e
D u r a t i o n [ s e c ]
4
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FCD5N60/FCU5N60 Rev. A0
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
5
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FCD5N60/FCU5N60 Rev. A0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
6
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FCD5N60/FCU5N60 Rev. A0
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
7
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FCD5N60/FCU5N60 Rev. A0
Package Dimensions (Continued)
I-PAK
Dimensions in Millimeters
8
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FCD5N60/FCU5N60 Rev. A0
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
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2. A critical component is any component of a life support device
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
9
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FCD5N60/FCU5N60 Rev. A0
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