BC80840 [FAIRCHILD]
Switching and Amplifier Applications; 开关和放大器应用型号: | BC80840 |
厂家: | FAIRCHILD SEMICONDUCTOR |
描述: | Switching and Amplifier Applications |
文件: | 总6页 (文件大小:74K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC807/BC808
Switching and Amplifier Applications
•
•
Suitable for AF-Driver stages and low power output stages
Complement to BC817/BC818
3
2
SOT-23
1
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector-Emitter Voltage
Collector-Emitter Voltage
CES
: BC807
: BC808
-50
-30
V
V
CEO
EBO
: BC807
: BC808
-45
-25
V
V
Emitter-Base Voltage
Collector Current (DC)
-5
-800
V
I
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
-310
C
T
T
150
J
-65 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BV
Collector-Emitter Breakdown Voltage
I = -10mA, I =0
CEO
CES
EBO
C
B
: BC807
: BC808
-45
-25
V
V
BV
BV
Collector-Emitter Breakdown Voltage
I = -0.1mA, V =0
C BE
: BC807
: BC808
-50
-30
V
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
I = -0.1mA, I =0
-5
V
E
C
I
I
V
= -25V, V =0
-100
-100
630
nA
nA
CES
EBO
CE
EB
BE
V
= -4V, I =0
C
h
h
V
V
= -1V, I = -100mA
100
60
FE1
FE2
CE
CE
C
= -1V, I = -300mA
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
I = -500mA, I = -50mA
-0.7
-1.2
V
V
CE
C
B
V
= -1V, I = -300mA
C
BE
CE
f
Current Gain Bandwidth Product
V
= -5V, I = -10mA
100
MHz
T
CE
C
f=50MHz
C
Output Capacitance
V
= -10V, f=1MHz
12
pF
ob
CB
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
h
Classification
FE
Classification
16
100 ~ 250
60-
25
40
h
h
160 ~ 400
100-
250 ~ 630
170-
FE1
FE2
Marking Code
Type
807-16
9FA
807-25
9FB
807-40
9FC
808-16
9GA
808-25
9GB
808-40
Marking
9GC
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Typical Characteristics
-500
-400
-300
-20
-16
-12
-8
-200
IB = - 1.0mA
IB = - 0.5mA
-100
-4
IB = 0
-0
IB = 0
-0
-0
-1
-2
-3
-4
-5
-0
-10
-20
-30
-40
-50
VCE[V], COLLECTOR-EMITTER VOLTAGE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. Static Characteristic
1000
100
10
-10
PULSE
IC = 10 IB
PULSE
VCE = - 2.0V
VCE(sat)
-1
- 1.0V
-0.1
VBE(sat)
1
-0.1
-0.01
-0.1
-1
-10
-100
-1000
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
-1000
-100
-10
f = 1.0MHz
VCE = -1V
PULSE
Cib
Cob
10
-1
1
-0.1
-0.1
-0.4
-1
-10
-100
-0.5
-0.6
-0.7
-0.8
-0.9
VCB[V], COLLECTOR-BASE VOLTAGE
EB[V], EMITTER-BASE VOLTAGE
VBE[V], BASE-EMITTER VOLTAGE
V
Figure 5. Base-Emitter On Voltage
Figure 6. Input Output Capacitance
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Typical Characteristics (Continued)
1000
VCE = -5.0V
100
10
-1
-10
-100
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
Package Dimensions
SOT-23
0.40 ±0.03
0.03~0.10
0.38 REF
+0.05
–0.023
0.40 ±0.03
0.12
0.96~1.14
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
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POP™
Stealth™
FAST®
LittleFET™
MicroFET™
MicroPak™
Power247™
PowerTrench®
QFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
FASTr™
GlobalOptoisolator™ MICROWIRE™
QS™
EcoSPARK™
E2CMOS™
EnSigna™
Across the board. Around the world.™
The Power Franchise™
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MSX™
MSXPro™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
QT Optoelectronics™ TinyLogic™
Quiet Series™
TruTranslation™
RapidConfigure™
RapidConnect™
UHC™
UltraFET®
SILENT SWITCHER® VCX™
SMART START™
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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