BC808F [AUK]
PNP Silicon Transistor (High current application Switching application); PNP硅晶体管（高电流应用交换应用程序）
| 型号： | BC808F |
| 厂家： | 
AUK CORP |
| 描述： | PNP Silicon Transistor (High current application Switching application) |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC808F
Semiconductor
PNP Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driver stage and low power output stages
• Complementary pair with BC818F
Ordering Information
Type NO.
Marking
MA
Package Code
SOT-23F
BC808F
: hFE rank
Outline Dimensions
unit : mm
2.4±0.1
1.6±0.1
1
3
2
PIN Connections
1. Base
2. Emitter
3. Collector
KST-2086-000
1
BC808F
Absolute maximum ratings
Characteristic
(Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
-30
Unit
V
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
-25
V
-5
V
-800
200
mA
mW
°C
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
150
Tstg
-55~150
°C
Electrical Characteristics
Characteristic
(Ta=25°C)
Symbol
BVCEO
Test Condition
Min. Typ. Max. Unit
Collector-Emitter breakdown voltage
Base-Emitter Turn On voltage
Collector-Emitter saturation voltage
Collector cut-off current
IC=-1mA, IB=0
-25
-
-
-
-
-
-
V
VBE(ON)
VCE(sat)
ICBO
VCE=-1V, IC=-300mA
IC=-500mA, IB=-50mA
VCB=-25V, IE=0
-
-
-1.2
-700
-100
630
V
mV
nA
-
-
*
DC current gain
VCE=-1V, IC=-100mA
100
hFE
VCB=-5V, IE=10mA,
f=100MHz
Transition frequency
fT
-
-
100
16
-
-
MHz
pF
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KST-2086-000
2
BC808F
Electrical Characteristic Curves
Fig. 2 IC -VBE
Fig. 1 Pc-Ta
Fig. 3 IC - VCE
Fig. 4 hFE - IC
Fig. 5 VCE(sat) - IC
KST-2086-000
3
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