BC808A-25 [KEXIN]
PNP Transistors;
| 型号： | BC808A-25 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总1页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
BC808A (KC808A)
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
Features
3
For general AF applications.
High collector current.
High current gain.
1
2
+0.1
-0.1
+0.05
-0.01
Low collector-emitter saturation voltage.
0.95
0.1
+0.1
-0.1
1.9
● Complementary NPN type available(BC818A)
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Peak collector current
Base current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-30
Unit
V
-25
V
-5
V
-500
-1
mA
A
ICM
IB
-100
310
mA
mW
Total power dissipation
Storage temperature
Junction temperature
Ptot
Tstg
Tj
-65 to +150
150
Electrical Characteristics Ta = 25
Parameter
Symbol
VCBO
Test conditions
Min
-30
-25
-5
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
IC = -10 µA, IE = 0
IC = -10 mA, IB = 0
IE = -10 µA, IC = 0
VCB = -25 V, IE = 0
VCEO
V
V
VEBO
ICBO
-100
-50
nA
A
Collector cutoff current
VCB = -25 V, IE = 0 , TA = 150
VEB = -4 V, IC = 0
Emitter cutoff current
BC808A-16
IEBO
hFE
-100
250
400
630
-0.7
-1.2
nA
100
160
250
160
250
350
DC current gain *
IC = -100 mA, VCE = -1 V
BC808A-25
BC808A-40
Collector saturation voltage *
Base to emitter voltage *
Collector-base capacitance
Emitter-base capacitance
Transition frequency
VCE(sat) IC = -500 mA, IB = -50 mA
VBE(sat) IC = -500 mA, IB = -50 mA
V
V
CCb
Ceb
fT
VCB = -10 V, f = 1 MHz
VEB = -0.5 V, f = 1 MHz
10
60
pF
pF
IC = -50 mA, VCE = -5 V, f = 100 MHz
200
MHz
* Pulsed: PW
350 us, duty cycle
2%
■ Classification of hfe
Type
Range
Marking
BC808A-16
BC808A-25
160-400
5F
BC808A-40
250-630
5G
100-250
5E
1
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Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD
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