BC182_D74Z [FAIRCHILD]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3;
| 型号： | BC182_D74Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE PACKAGE-3 放大器 晶体管 |
| 文件： | 总4页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC182
NPN General Purpose Amplifier
•
This device is designed for general purpose amplifier application at
collector currents to 100mA.
•
Sourced from process 10.
TO-92
1. Collector 2. Base 3. Emitter
1
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
50
V
V
VCBO
VEBO
IC
60
6
V
- Continuous
100
mA
°C
TJ, TSTG
Storage Junction Temperature Range
- 55 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IC = 2mA, IB = 0
50
60
6
V
V
V
IC = 10µA, IE = 0
IE = 10µA, IC = 0
VCB = 50V, VBE = 0
VEB = 4V, IE = 0
ICBO
IEBO
Collector Cut-off Current
15
15
nA
nA
Emitter-Base Leakage Current
On Characteristics
hFE DC Current Gain
VCE = 5V, IC = 10µA
40
120
80
V
CE = 5V, IC = 2mA
500
V
CE = 5V, IC = 100mA
V
CE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.5mA
C = 100mA, IB = 5mA
0.25
0.6
V
I
VBE(sat)
VBE(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC = 100mA, IB = 5mA
VCE = 5V, IC = 2mA
1.2
0.7
V
V
0.55
150
125
Dynamic Characteristics
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 10mA, f = 100MHz
VCE = 10V, IC = 0, f = 1MHz
VCE = 5V, IC = 2mA, f = 1KHz
VCE = 5V, IC = 0.2mA
MHz
pF
Cob
hfe
NF
Output Capacitance
Small Signal Current Gain
Noise Figure
5
500
10
dB
R
S = 2KΩ, f = 1KHz
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2005
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation @TA=25°C
Derate above 25°C
350
2.8
mW
mW/°C
RθJA
RθJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
357
125
mW/°C
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2005
Package Dimensions
TO-92
+0.25
–0.15
4.58
0.46 0.10
+0.10
–0.05
1.27TYP
[1.27 0.20
1.27TYP
[1.27 0.20
0.38
]
]
3.60 0.20
(R2.29)
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, September 2005
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
®
ACEx™
PowerSaver™
SuperSOT™-8
SyncFET™
TinyLogic
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
FAST
®
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
PowerTrench
FASTr™
FPS™
FRFET™
GlobalOptoisolator™
GTO™
®
®
QFET
QS™
TINYOPTO™
TruTranslation™
UHC™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
SILENT SWITCHER
SMART START™
SPM™
®
UltraFET
HiSeC™
I2C™
UniFET™
VCX™
Wire™
MSXPro™
OCX™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
®
OCXPro™
OPTOLOGIC
®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
FACT Quiet Series™
Stealth™
Across the board. Around the world.™
SuperFET™
SuperSOT™-3
SuperSOT™-6
®
The Power Franchise
Programmable Active Droop™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVESTHE RIGHTTO MAKE CHANGES WITHOUTFURTHER NOTICETOANY
PRODUCTS HEREINTO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUMEANYLIABILITY
ARISING OUTOFTHEAPPLICATION OR USE OFANYPRODUCTOR CIRCUITDESCRIBED HEREIN; NEITHER DOES IT
CONVEYANYLICENSE UNDER ITS PATENTRIGHTS, NORTHE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I16
相关型号：
©2020 ICPDF网 联系我们和版权申明