BC183 [SEMTECH]

NPN Silicon Epitaxial Planar Transistor; NPN硅外延平面晶体管
BC183
型号: BC183
厂家: SEMTECH CORPORATION    SEMTECH CORPORATION
描述:

NPN Silicon Epitaxial Planar Transistor
NPN硅外延平面晶体管

晶体 晶体管
文件: 总2页 (文件大小:140K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC182…BC184  
NPN Silicon Epitaxial Planar Transistor  
for general purpose amplifier applications  
1. Collector 2. Base 3. Emitter  
TO-92 Plastic Package  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VCBO  
Value  
Unit  
V
60  
45  
50  
30  
Collector Base Voltage  
BC182  
BC183, BC184  
Collector Emitter Voltage  
BC182  
BC183, BC184  
V
V
VCEO  
VEBO  
6
Emitter Base Voltage  
Collector Current  
IC  
100  
350  
mA  
Ptot  
mW  
Total Power Dissipation  
Junction Temperature  
Storage Temperature Range  
O
C
Tj  
150  
O
C
TS  
- 55 to + 150  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
Min.  
Max.  
Unit  
DC Current Gain  
at VCE = 5 V, IC = 10 µA  
BC182, BC183  
BC184  
BC182  
BC183  
BC184  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
hFE  
40  
-
-
-
-
-
-
-
-
-
100  
120  
120  
250  
80  
at VCE = 5 V, IC = 2 mA  
500  
800  
800  
-
at VCE = 5 V, IC = 100 mA  
BC182, BC183  
BC184  
130  
-
Collector Base Cutoff Current  
at VCB = 50 V  
at VCB = 30 V  
BC182  
BC183, BC184  
-
-
15  
15  
ICBO  
nA  
Emitter Base Cutoff Current  
at VEB = 4 V  
IEBO  
-
15  
nA  
V
Collector Base Breakdown Voltage  
at IC = 10 µA  
BC182  
BC183, BC184  
60  
45  
-
-
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Collector Emitter Breakdown Voltage  
at IC = 2 mA  
BC182  
BC183, BC184  
50  
30  
-
-
V
Emitter Base Breakdown Voltage  
at IE = 100 µA  
6
-
V
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 27/12/2007  
BC182…BC184  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
VCE(sat)  
Min.  
Max.  
Unit  
V
Collector Emitter Saturation Voltage  
at IC = 10 mA, IB = 0.5 mA  
at IC = 100 mA, IB = 5 mA  
-
-
0.25  
0.6  
Base Emitter Saturation Voltage  
at IC = 100 mA, IB = 5 mA  
VBE(sat)  
VBE(on)  
fT  
-
1.2  
0.7  
-
V
V
Base Emitter On Voltage  
at VCE = 5 V, IC = 2 mA  
0.55  
150  
-
Current Gain Bandwidth Product  
at VCE = 5 V, IC = 10 mA, f = 100 MHz  
MHz  
pF  
Collector Base Capacitance  
at VCB = 10 V, f = 1 MHz  
Cob  
5
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 27/12/2007  

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