BC183-D26Z [FAIRCHILD]
Transistor;
| 型号： | BC183-D26Z |
| 厂家： | 
FAIRCHILD SEMICONDUCTOR |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
June 2007
BC183
NPN General Purpose Amplifer
TO-92
1
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector-Base Voltage
45
30
Collector-Emitter Voltage
V
Emitter-Base Voltage
5
V
Collector Current (DC)
100
mA
mW
°C
PC
Collector Dissipation (Ta=25°C)
Storage Junction Temperature Range
350
TSTG , TJ
- 55 ~ 150
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
45
Max
Units
Collector-Base Voltage
IC = 10μA
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IC = 2mA
30
IE = 10μA
VCB = 30V
VEB = 4.0V
5
V
15
15
nA
nA
IEBO
hFE
VCE = 5V, IC = 10μA
VCE = 5V, IC = 100mA
40
80
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
0.25
0.6
V
VBE(sat)
VBE(on)
COB
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Output Capacitance
IC = 100mA, IB = 5mA
VCE = 5V, IC = 2mA
VCE = 10V, f = 1.0MHz
1.2
0.7
5
V
V
0.55
pF
fT
Current gain Bandwidth Product
VCE = 5V, IC = 10mA,
f = 100MHz
150
125
MHz
hfe
NF
Small Signal Current Gain
Noise Figure
VCE = 5V, IC = 2mA
f = 1KHz
900
10
VCE = 5V, IC = 200mA
dB
RG = 2KΩ, f = 1KHz
©2007 Fairchild Semiconductor Corporation
BC183 Rev. A
1
www.fairchildsemi.com
Typical Characteristics
1200
0.3
0.25
0.2
VCE = 5.0V
125 °C
1000
β = 10
800
600
125 °C
0.15
0.1
25 °C
400
25 °C
- 40 °C
200
- 40 °C
0.05
0
0.01 0.03 0.1 0.3
1
3
10
30
100
0.1
1
10
100
IC - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
1
0.8
0.6
0.4
0.2
1
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
25 °C
25 °C
125°C
125°C
β = 10
VCE = 5.0 V
0.1
1
10
40
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter ON Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Curent
10
5
4
3
2
1
0
f = 1.0 MHz
VCB = 45V
C
1
C
ob
0.1
25
50
75
100
125
150
0
4
8
12
16
20
TA - AMBIE NT TEMP ERATURE ( C)
REVERSE BIAS VOLTAGE (V)
°
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Input and Output Capacitance
vs Reverse Bias Voltage
2
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BC183 Rev. A
tm
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Definition of Terms
Datasheet Identification
Advance Information
Product Status
Definition
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I23
3
www.fairchildsemi.com
BC183 Rev. A
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