FLM5359-4F [EUDYNA]
C-Band Internally Matched FET; C波段内部匹配型场效应管
| 型号： | FLM5359-4F |
| 厂家： | 
EUDYNA DEVICES INC |
| 描述： | C-Band Internally Matched FET |
| 文件： | 总4页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLM5359-4F
C-Band Internally Matched FET
FEATURES
• High Output Power: P
= 36.5dBm (Typ.)
1dB
• High Gain: G
= 10.5dB (Typ.)
1dB
= 37% (Typ.)
• High PAE: η
• Low IM = -46dBc@Po = 25.5dBm
add
3
• Broad Band: 5.3 ~ 5.9GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
DESCRIPTION
The FLM5359-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Unit
Rating
Drain-Source Voltage
Gate-Source Voltage
V
V
15
-5
V
V
DS
GS
T = 25°C
c
Total Power Dissipation
Storage Temperature
Channel Temperature
P
25.0
-65 to +175
175
W
°C
°C
T
T
stg
T
ch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (V ) should not exceed 10 volts.
DS
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Limit
Typ.
Item
Symbol
Test Conditions
Unit
Min.
Max.
V
V
= 5V, V
= 0V
GS
Saturated Drain Current
Transconductance
I
-
1950 2900
mA
mS
V
DS
DS
DSS
g
-
= 5V, I
= 1100mA
-
1000
m
DS
Pinch-off Voltage
V
V
I
= 5V, I
DS
= 90mA
-1.0
-5.0
-2.0 -3.5
p
DS
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
V
-
-
-
-
V
= -90µA
GSO
GS
P
35.5 36.5
dBm
dB
1dB
Power Gain at 1dB G.C.P.
Drain Current
G
9.5
10.5
1dB
V
=10V,
DS
I
-
-
-
1100 1300
mA
%
dsr
I
= 0.55 I
DS
DSS (Typ.),
f = 5.3 ~ 5.9 GHz,
η
Power-added Efficiency
Gain Flatness
add
37
-
-
Z =Z = 50 ohm
S
L
∆G
0.6
dB
f = 5.9 GHz, ∆f = 10 MHz
3rd Order Intermodulation
Distortion
2-Tone Test
IM
3
-44
-46
-
dBc
P
= 25.5dBm S.C.L.
out
R
Thermal Resistance
Channel Temperature Rise
CASE STYLE: IB
Channel to Case
-
-
5.0
-
6.0
80
°C/W
°C
th
∆T
10V x I
x R
th
ch
dsr
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
1
FLM5359-4F
C-Band Internally Matched FET
POWER DERATING CURVE
OUTPUT POWER & IM vs. INPUT POWER
3
30
V
=10V
DS
f = 5.9 GHz
1
32
30
28
26
24
22
20
f = 5.91GHz
2
24
2-tone test
P
out
18
12
6
-20
-30
-40
-50
IM
3
0
50
100
150
200
8
10
12
14
16
18
20
22
Case Temperature (°C)
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. FREQUENCY
OUTPUT POWER vs. INPUT POWER
V
=10V
DS
V
=10V
DS
f = 5.6 GHz
38
P
1dB
38
Pin=27dBm
24dBm
37
36
35
36
34
32
30
28
P
out
22dBm
20dBm
34
33
32
31
45
η
add
30
15
16
18
20
22
24
26
28
5.3 5.4 5.5 5.6 5.7 5.8 5.9
Frequency (GHz)
Input Power (dBm)
2
FLM5359-4F
C-Band Internally Matched FET
S
S
S
S
+90°
0.2
11
22
21
12
+j50
+j100
+j25
0.1
+j250
+j10
0
5.1GHz
5.1GHz
5.3
5.5
5.7
5.5
5.3
6.1
10
100
5.5
250
180°
4
2
0°
6
8
SCALE FOR |S
|
5.3
5.9
5.7
21
5.5
5.9
6.1
5.1GHz
5.1GHz
6.1
5.7
-j10
5.9
-j250
6.1
5.3
5.9
5.7
-j100
-j25
-j50
-90°
S-PARAMETERS
= 10V, I = 1100mA
V
DS
S21
DS
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
5100
5200
5300
5400
5500
5600
5700
5800
5900
6000
6100
.363
.341
.317
.287
.244
.189
.116
.029
.082
.195
.309
-126.5
-146.1
-165.4
175.9
156.5
136.3
113.0
69.0
3.558
3.665
3.769
3.887
4.001
4.092
4.150
4.141
4.025
3.822
3.523
83.3
69.1
54.5
39.5
23.8
7.2
.048
.054
.062
.068
.076
.083
.089
.093
.097
.096
.091
48.4
31.8
.708
.697
.680
.664
.642
.611
.579
.548
.524
.508
.502
-18.0
-27.6
14.5
-38.0
-0.5
-49.3
-17.8
-33.6
-49.8
-67.8
-83.5
-62.2
-76.7
-10.5
-29.0
-48.1
-67.5
-86.8
-93.9
-113.2
-134.1
-156.3
-178.2
-88.4
-115.1
-137.5
-100.3
-117.0
3
FLM5359-4F
C-Band Internally Matched FET
Case Style "IB"
Metal-Ceramic Hermetic Package
1
2-R 1.6 0.15
(0.063)
0.1
(0.004)
2
3
2.6 0.15
(0.102)
0.6
(0.024)
5.2 Max.
(0.205)
10.7
(0.421)
1. Gate
2. Source (Flange)
3. Drain
12.0
(0.422)
Unit: mm(inches)
17.0 0.15
(0.669)
21.0 0.15
(0.827)
For further information please contact:
CAUTION
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
FAX: (408) 428-9111
www.us.eudyna.com
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
4
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