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FLM5964-25F [ETC]

C-Band Internally Matched FET; C波段内部匹配型场效应管
FLM5964-25F
型号： FLM5964-25F
厂家： ETC    ETC
描述：

C-Band Internally Matched FET
C波段内部匹配型场效应管

晶体 晶体管 CD 放大器 局域网
文件： 总4页 (文件大小：288K)
中文：  中文翻译
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FLM5964-25F  
C-Band Internally Matched FET  
FEATURES  
• High Output Power: P  
= 44.5dBm (Typ.)  
1dB  
• High Gain: G  
= 10.0dB (Typ.)  
1dB  
= 37% (Typ.)  
• High PAE: η  
• Low IM = -46dBc@Po = 33.5dBm  
add  
3
• Broad Band: 5.9 ~ 6.4GHz  
• Impedance Matched Zin/Zout = 50Ω  
• Hermetically Sealed Package  
DESCRIPTION  
The FLM5964-25F is a power GaAs FET that is internally matched for  
standard communication bands to provide optimum power and gain in a  
50 ohm system.  
Eudyna’s stringent Quality Assurance Program assures the highest  
reliability and consistent performance.  
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)  
Item  
Symbol  
Condition  
Unit  
Rating  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
15  
-5  
V
V
DS  
GS  
T = 25°C  
c
Total Power Dissipation  
Storage Temperature  
Channel Temperature  
P
93.7  
-65 to +175  
175  
W
°C  
°C  
T
T
stg  
T
ch  
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:  
1. The drain-source operating voltage (V ) should not exceed 10 volts.  
DS  
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with  
gate resistance of 25Ω.  
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)  
Limit  
Typ.  
Item  
Symbol  
Test Conditions  
Unit  
Min.  
Max.  
V
V
V
I
= 5V, V  
= 0V  
GS  
Saturated Drain Current  
Transconductance  
I
-
10  
15  
-
A
DS  
DS  
DS  
DSS  
g
= 5V, I  
= 6.5A  
-
10  
m
S
V
V
DS  
Pinch-off Voltage  
V
= 5V, I  
DS  
= 500mA  
-0.5  
-5.0  
-1.5 -3.0  
p
Gate Source Breakdown Voltage  
Output Power at 1dB G.C.P.  
Power Gain at 1dB G.C.P.  
Drain Current  
V
-
-
-
-
= -500µA  
GSO  
GS  
P
43.5 44.5  
dBm  
dB  
1dB  
V
=10V,  
G
9.0  
10.0  
DS  
1dB  
I
= 0.65I  
DS  
DSS (Typ.),  
I
-
-
6500 7600  
mA  
%
dsr  
f = 5.9 ~ 6.4 GHz,  
η
Power-added Efficiency  
add  
37  
-
-
Z =Z = 50 ohm  
S
L
Gain Flatness  
∆G  
-
0.6  
dB  
f = 6.4 GHz, ∆f = 10 MHz  
3rd Order Intermodulation  
Distortion  
2-Tone Test  
IM  
3
-44  
-46  
-
dBc  
P
= 33.5dBm S.C.L.  
out  
R
Thermal Resistance  
Channel Temperature Rise  
CASE STYLE: IK  
Channel to Case  
-
-
1.4  
-
1.6  
°C/W  
°C  
th  
∆T  
10V x I  
x R  
th  
100  
ch  
dsr  
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level  
Edition 1.3  
August 2004  
1
FLM5964-25F  
C-Band Internally Matched FET  
POWER DERATING CURVE  
OUTPUT POWER & IM vs. INPUT POWER  
3
100  
V
=10V  
DS  
36  
34  
32  
30  
28  
26  
24  
f = 6.4 GHz  
1
2
f
80  
60  
40  
20  
= 6.41 GHz  
2-tone test  
P
out  
-35  
-40  
-45  
IM  
3
-50  
-55  
22  
20  
-60  
0
50  
100  
150  
200  
Case Temperature (°C)  
14  
16  
18  
20  
22  
24  
Input Power (S.C.L.) (dBm)  
S.C.L.: Single Carrier Level  
OUTPUT POWER vs. INPUT POWER  
OUTPUT POWER vs. FREQUENCY  
46  
44  
V
=10V  
DS  
V
=10V  
P
DS  
1dB  
P
Pin=34.0dBm  
32.0dBm  
f = 6.15 GHz  
out  
45  
44  
43  
42  
41  
40  
39  
38  
42  
40  
38  
36  
40  
30  
20  
10  
η
30.0dBm  
add  
28.0dBm  
26.0dBm  
37  
24  
26  
28  
30  
32  
34  
36  
Input Power (dBm)  
5.9  
6.0 6.1  
6.2  
6.3  
6.4  
Frequency (GHz)  
2
FLM5964-25F  
C-Band Internally Matched FET  
S
S
S
S
+90°  
11  
22  
21  
12  
+j50  
+j100  
+j25  
6.6  
6.5  
6.4  
.8  
6.3 6.4  
5.7GHz  
5.7GHz  
+j250  
5.8  
5.9  
6.5  
6.2  
+j10  
0
5.8  
6.3  
6.1  
6.0  
5.9  
5.9  
6.0  
6.6  
6.0  
6.2  
1
2
3
4
25  
6.6  
50Ω  
250  
180°  
0°  
6.1  
6.2  
6.1  
6.6  
SCALE FOR |S  
|
21  
5.8  
5.7GHz  
6.2  
6.5  
6.3  
6.4  
6.1  
6.5  
6.3  
6.4  
-j250  
-j10  
6.0  
0.1  
5.9  
5.8  
5.7GHz  
-j25  
-j100  
0.2  
-90°  
-j50  
S-PARAMETERS  
= 10V, I = 6500mA  
V
DS  
S21  
DS  
FREQUENCY  
(MHZ)  
S11  
S12  
S22  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
MAG  
ANG  
5700  
5800  
5900  
6000  
6100  
6200  
6300  
6400  
6500  
6600  
.428  
.369  
.311  
.261  
.230  
.240  
.290  
.365  
.451  
.538  
104.1  
81.2  
4.249  
-89.0  
.085  
.090  
.096  
.099  
.103  
.105  
.106  
.103  
.099  
.092  
-144.0  
-162.3  
179.4  
161.1  
142.1  
123.1  
103.7  
84.0  
.335  
.356  
.371  
.378  
.374  
.358  
.333  
.306  
.300  
.327  
79.6  
59.2  
38.7  
18.6  
-3.1  
4.311 -107.4  
4.347 -126.1  
4.354 -144.9  
4.333 -164.2  
55.2  
24.5  
-13.9  
-55.4  
-92.9  
-123.7  
-148.8  
-170.8  
4.272  
4.170  
3.999  
3.756  
3.470  
176.2  
156.2  
135.8  
115.2  
94.6  
-26.4  
-53.6  
-85.1  
63.8  
-122.1  
-159.3  
43.7  
3
FLM5964-25F  
C-Band Internally Matched FET  
Case Style "IK"  
Metal-Ceramic Hermetic Package  
0.1  
(0.004)  
1
2
3
4-R 1.3 0.15  
(0.051)  
2.4 0.15  
(0.094)  
0.6  
(0.024)  
5.5 Max.  
(0.217)  
14.9  
(0.587)  
1. Gate  
2. Source (Flange)  
3. Drain  
20.4 0.3  
(0.803)  
Unit: mm(inches)  
24 0.5  
(0.945)  
For further information please contact:  
CAUTION  
Eudyna Devices USA Inc.  
2355 Zanker Rd.  
San Jose, CA 95131-1138, U.S.A.  
TEL: (408) 232-9500  
Eudyna Devices Inc. products contain gallium arsenide  
(GaAs) which can be hazardous to the human body and the environment.  
For safety, observe the following procedures:  
FAX: (408) 428-9111  
www.us.eudyna.com  
• Do not put this product into the mouth.  
• Do not alter the form of this product into a gas, powder, or liquid  
through burning, crushing, or chemical processing as these by-products  
are dangerous to the human body if inhaled, ingested, or swallowed.  
Eudyna Devices Europe Ltd.  
Network House  
Norreys Drive  
Maidenhead, Berkshire SL6 4FJ  
United Kingdom  
• Observe government laws and company regulations when discarding this  
product. This product must be discarded in accordance with methods  
specified by applicable hazardous waste procedures.  
TEL: +44 (0) 1628 504800  
FAX: +44 (0) 1628 504888  
Eudyna Devices Inc. reserves the right to change products and specifications  
without notice. The information does not convey any license under rights of  
Eudyna Devices Inc. or others.  
Eudyna Devices Asia Pte Ltd.  
Hong Kong Branch  
© 2004 Eudyna Devices USA Inc.  
Printed in U.S.A.  
Rm. 1101, Ocean Centre, 5 Canton Rd.  
Tsim Sha Tsui, Kowloon, Hong Kong  
TEL: +852-2377-0227  
FAX: +852-2377-3921  
Eudyna Devices Inc.  
Sales Division  
1, Kanai-cho, Sakae-ku  
Yokohama, 244-0845, Japan  
TEL: +81-45-853-8156  
FAX: +81-45-853-8170  
4

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