FLM5964-45F [ETC]
C-Band Internally Matched FET; C波段内部匹配型场效应管
| 型号： | FLM5964-45F |
| 厂家： | 
ETC |
| 描述： | C-Band Internally Matched FET |
| 文件： | 总5页 (文件大小：284K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FLM5964-45F
C-Band Internally Matched FET
FEATURES
・High Output Power: P1dB=47.0dBm(Typ.)
・High Gain: G1dB=8.5dB(Typ.)
・High PAE: ηadd=39%(Typ.)
・Broad Band: 5.9~6.4GHz
・Impedance Matched Zin/Zout = 50Ω
・Hermetically Sealed Package
DESCRIPTION
The FLM5964-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50Ω system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o
Symbol
Rating
15
Unit
V
V
W
oC
oC
Item
VDS
VGS
PT
Tstg
Tch
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
-5
115
-65 to +175
175
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC)
Item
Symbol
Condition
Limit
≤
Unit
V
mA
mA
VDS
IGF
IGR
10
DC Input Voltage
Forward Gate Current
Reverse Gate Current
RG=10
108
Ω
RG=10
≤
-23.2
Ω
≥
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC)
Limit
Typ.
24
16
-1.5
-
47.0
8.5
11
39
-
Item
Symbol
Condition
Unit
Min.
-
-
-0.5
-5.0
46.0
7.5
-
Max.
IDSS
gm
VDS=5V, VGS=0V
VDS=5V, IDS=8.0A
VDS=5V, IDS=480mA
IGS=-480uA
-
A
S
V
V
dBm
dB
A
%
dB
Drain Current
-
-3.0
-
-
-
13
-
1.2
Transconductance
Vp
Pinch-off Voltage
VGSO
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
P
VDS=10V
1d B
G1d B
Idsr
f=5.9 - 6.4 GHz
IDS(DC)=8.0A(typ.)
add
η
Zs=ZL=50
-
-
Power-added Efficiency
Gain Flatness
Ω
G
∆
f=6.4 GHz
3rd Order Intermodulation
Distortion
IM3
f=10MHz, 2-tone Test
-37
-40
-
dBc
∆
Pout=35.5dBm(S.C.L.)
Channel to Case
R
-
-
1.1
-
1.3
100
oC/W
oC
Thermal Resistance
Channel Temperature Rise
th
Tch
10V x IDS(DC) X R
∆
th
G.C.P.:Gain Compression Point
CASE STYLE : IK
ESD
Class III
2000V
~
ꢀ
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k )
Ω
Edition 1.3
September 2004
1
FLM5964-45F
C-Band Internally Matched FET
Output Power & P.A.E. vs. Input Power
VDS=10V, IDS(DC), f=6.15GHz
Power Derating Curve
140
50
48
46
44
42
40
38
36
34
80
70
60
50
40
30
20
10
0
120
100
80
60
40
20
0
Pout
P.A.E.
24 26 28 30 32 34 36 38 40 42
Input Power (dBm)
0
50
100
150
)
200
Case Temperature (
℃
Output Power vs. Frequency
VDS=10V, IDS(DC)=8A
50
IMD vs. Output Power
VDS=10V, IDS(DC)=8A
f1=6.40GHz, f2=6.41GHz
48
46
44
42
40
38
36
34
Pin=41dBm
P1dB
-25
-30
-35
-40
-45
-50
-55
-60
Pin=34dBm
IM3
Pin=30dBm
IM5
Pin=26dBm
5.7 5.8 5.9
6
6.1 6.2 6.3 6.4 6.5 6.6
Frequency (GHz)
30 31 32 33 34 35 36 37 38 39 40
Output Power (S.C.L.) (dBm)
S.C.L. :Single Carrier Level
2
FLM5964-45F
C-Band Internally Matched FET
■ S-PARAMETER
+90°
+50j
+100j
+25j
7.4
5.
6.4
6.8
7.4
5.9
+250j
+10j
6.4
10.5
6.15
6.8
6.8
5.9
6.15
6.8
6.15
5.9
2
3
0
±180°
∞
0°
7.4
5.5
10
Ω
25
6.4
Scale for |S21|
7.4
5.5
6.15
10
-250j
-10j
5.5
5.9
6.4
-25j
-100j
0.2
-90°
S11
S22
S12
S21
-50j
VDS=10V, IDS(DC)=8.0A
Freq.
[GHz]
5.50
5.60
5.70
5.80
5.90
6.00
6.10
6.20
6.30
6.40
6.50
6.60
6.70
6.80
6.90
7.00
7.10
7.20
7.30
7.40
S11
S21
S12
S22
MAG
0.69
0.68
0.66
0.64
0.62
0.59
0.56
0.52
0.48
0.46
0.47
0.51
0.57
0.64
0.71
0.77
0.82
0.85
0.88
0.89
ANG
MAG
ANG
-65.86
-82.12
-98.96
-116.10
-133.45
-150.81
-168.95
173.00
153.96
134.25
114.07
93.41
73.16
53.61
35.09
16.95
1.25
-14.52
-29.03
-42.51
MAG
ANG
-98.76
-119.62
-138.82
-156.63
-172.99
168.51
151.81
134.62
116.09
96.67
76.89
55.03
34.26
14.80
-2.80
MAG
0.24
0.20
0.18
0.17
0.19
0.20
0.21
0.21
0.19
0.15
0.09
0.02
0.10
0.20
0.29
0.38
0.46
0.53
0.59
0.64
ANG
-178.84
156.65
127.57
98.72
74.14
53.42
36.86
22.64
9.90
-2.96
-11.43
41.26
106.30
99.38
88.73
77.36
66.53
56.00
46.08
37.22
100.73
83.94
66.62
49.49
31.08
2.71
2.79
2.87
2.93
3.00
3.05
3.09
3.12
3.13
3.12
3.03
2.88
2.67
2.43
2.16
1.91
1.67
1.45
1.27
1.09
0.04
0.05
0.05
0.05
0.06
0.06
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.06
0.05
0.05
0.04
0.04
0.03
0.03
12.46
-7.81
-29.71
-55.12
-84.53
-115.98
-147.35
-175.07
161.88
142.58
126.73
114.00
102.39
92.83
-19.52
-35.33
-49.84
-66.26
-77.65
84.05
3
FLM5964-45F
C-Band Internally Matched FET
■ Package Out Line
Case Style : IK
PIN ASSIGMENT
1 : GATE
2 : SOURCE
3 : DRAIN
4 : SOURCE
Unit : mm
4
FLM5964-45F
C-Band Internally Matched FET
For further information please contact :
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
・Do not put these products into the mouth.
FAX: (408) 428-9111
・Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-
products are dangerous to the human body if inhaled, ingested, or
swallowed.
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
・Observe government laws and company regulations when
discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste
procedures.
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Inc. reserves the right to change products and
specifications without notice.The information does not convey any
license under rights of Eudyna Devices Inc. or others.
Eudyna Devices Asia Pte. Ltd.
Hong Kong Branch
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Rm.1101,Ocean Centre, 5 Canton Road
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL +81-45-853-8156
FAX +81-45-853-8170
5
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