FLM6/10 [LITTELFUSE]
Axial Lead and Cartridge Fuses - Midget; 轴向引线和墨盒保险丝 - 侏儒
| 型号： | FLM6/10 |
| 厂家： | 
LITTELFUSE |
| 描述： | Axial Lead and Cartridge Fuses - Midget |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Axial Lead and Cartridge Fuses
Midget
U
®
®L
QPL
250 Volt Slo-Blo® Type Fuse FLM Series
ELECTRICAL CHARACTERISTICS:
% of Ampere
Rating
Ampere
Rating
Opening
Time
135%
1/10-30
32/10–30
0–3
1 hour, Maximum
12 seconds, Minimum
5 seconds, Minimum
200%
AGENCY APPROVALS: Listed by Underwriters Laboratories
and Certified by CSA.
INTERRUPTING RATING: 10,000 amperes at 250 VAC.
FUSES TO MIL SPEC: See F09B type in Military Section.
PATENTED
ORDERING INFORMATION:
Cartridge
Catalog
Number
Nominal
Resistance
Cold Ohms
Ampere
Rating
AC Voltage
Rating
FLM 1/10
FLM 15/100
FLM 2/10
FLM 1/4
.100
.150
.200
.250
.300
250
250
250
250
250
188.0
87.0
35.109
5.413
3.79
38.1
(1.50")
10.31
(.406")
FLM 3/10
FLM 4/10
FLM 1/2
FLM 6/10
FLM 8/10
FLM 1
.400
.500
.600
.800
1
250
250
250
250
250
2.10
1.54
1.024
.623
.395
1
8
FLM 1 /
1.125
1.25
1.4
1.5
1.6
250
250
250
250
250
.356
.286
.253
.219
.184
Average Time Current Curves
1
4
FLM 1 /
4
10
FLM 1 /
1
2
FLM 1 /
6
10
FLM 1 /
8
1000
10
FLM 1 /
1.8
2
2.25
2.5
2.8
3
3.2
3.5
4
250
250
250
250
250
250
250
250
250
250
.162
.125
.102
.0904
.0735
.0700
.0576
.0517
.0426
.0360
FLM 2
1
4
FLM 2 /
1
2
FLM 2 /
8
10
FLM 2 /
FLM 3
100
10
1
2
10
FLM 3 /
1
2
FLM 3 /
FLM 4
FLM 4 /
1
2
4.5
FLM 5
FLM 5 /
5
5.6
6
6.25
7
250
250
250
250
250
.0413
.0326
.0280
.0277
.02133
6
10
FLM 6
FLM 6 /
1
4
FLM 7
FLM 8
FLM 9
FLM 10
FLM 12
FLM 15
8
9
10
12
15
250
250
250
250
250
.01247
.01066
.00903
.00698
.00530
FLM 20
FLM 25
FLM 30
20
25
30
250
250
250
.00385
.00275
.00226
0.1
0.01
0.1
1
1000
10
100
CURRENT IN AMPERES
442
www. lit t elf us e. c om
相关型号：
FLM6472-25DA
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU
FLM6472-4C
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU
FLM6472-4F
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IB, 3 PIN
FUJITSU
FLM7177-12DA
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC PACKAGE-2
FUJITSU
©2020 ICPDF网 联系我们和版权申明