STP6NC80FP [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP ; 晶体管| MOSFET | N沟道| 800V V（ BR ） DSS | 5.1AI （D ） | TO- 220FP\n
| 型号： | STP6NC80FP |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.1A I(D) | TO-220FP
|
| 文件： | 总8页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP6NC80Z - STP6NC80ZFP
STB6NC80Z-1
N-CHANNEL 800V - 1.8Ω - 5.1A TO-220/TO-220FP/I PAK
Zener-Protected PowerMESH III MOSFET
PRELIMINARY DATA
TYPE
V
R
DS(on)
I
D
DSS
STP6NC80Z/FP
STB6NC80Z-1
800V
800V
< 2 Ω
< 2 Ω
5.1 A
5.1 A
n TYPICAL R (on) = 1.8 Ω
DS
3
2
■ EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
1
TO-220
TO-220FP
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
3
2
1
I PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)6NC80Z(-1) STP6NC80ZFP
V
Drain-source Voltage (V
= 0)
GS
800
800
± 25
V
V
V
A
A
DS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
Gate- source Voltage
GS
I
Drain Current (continuos) at T = 25°C
5.1
3.2
20
5.1(*)
3.2(*)
20(*)
D
C
I
Drain Current (continuos) at T = 100°C
D
C
(1)
Drain Current (pulsed)
A
I
DM
P
Total Dissipation at T = 25°C
125
1
40
W
W/°C
mA
KV
V/ns
V
TOT
C
Derating Factor
0.32
I
Gate-source Current
±50
3
GS
V
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
ESD(G-S)
dv/dt
3
V
--
2000
ISO
T
–65 to 150
150
°C
stg
T
Max. Operating Junction Temperature
°C
j
(•)Pulse width limited by safe operating area
(1)I ≤5.1A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
(BR)DSS j JMAX
SD
DD
April 2000
(2) Limited only by maximum temperature allowed
.
1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP6NC80Z/FP/STP6NC80Z-1
THERMAL DATA
TO-220 / I PAK
TO-220FP
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case Max
1
3.13
°C/W
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
30
0.1
300
T
l
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
Avalanche Current, Repetitive or Not-Repetitive
I
5.1
A
AR
(pulse width limited by T max)
j
Single Pulse Avalanche Energy
E
250
mJ
AS
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
Min.
Typ.
Max.
Unit
V
I
I
= 250 µA, V = 0
800
V
(BR)DSS
D
D
GS
Breakdown Voltage Temp.
Coefficient
∆BV
/∆T
= 1 mA, V = 0
0.9
V/°C
DSS
J
GS
V
V
= Max Rating
1
µA
µA
DS
Zero Gate Voltage
I
DSS
GSS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
Gate-body Leakage
I
V
= ±20V
±10
µA
Current (V = 0)
DS
(1)
ON
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
Unit
V
V
Gate Threshold Voltage
V
V
= V , I = 250µA
3
5
2
GS(th)
DS
GS
GS
D
= 10V, I = 2.9 A
1.8
Ω
D
Static Drain-source On
Resistance
R
DS(on)
V
V
> I
= 10V
x R
DS
GS
D(on) DS(on)max,
I
On State Drain Current
5.1
A
D(on)
DYNAMIC
Symbol
Parameter
Test Conditions
> I x R
D(on)
= 2.9A
Min.
Typ.
Max.
Unit
V
DS
DS(on)max,
(1)
Forward Transconductance
8
S
g
fs
I
D
C
Input Capacitance
Output Capacitance
1600
124
pF
pF
iss
C
oss
V
= 25V, f = 1 MHz, V = 0
GS
DS
Reverse Transfer
Capacitance
C
rss
11
pF
2/8
STP6NC80Z/FP/STP6NC80Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
= 400 V, I = 2.9 A
Min.
Typ.
Max.
Unit
t
V
R
27
ns
d(on)
DD
D
Turn-on Delay Time
Rise Time
= 4.7Ω V
= 10V
GS
G
t
10
ns
r
(see test circuit, Figure 3)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
30
7
nC
nC
nC
g
V
V
= 640V, I = 5.8A,
= 10V
DD
GS
D
Q
Q
gs
gd
13
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
TBD
TBD
TBD
Max.
Unit
ns
t
r(Voff)
V
R
= 640V, I = 5.8 A,
DD
D
t
= 4.7Ω, V = 10V
ns
f
G
GS
(see test circuit, Figure 5)
t
Cross-over Time
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
Source-drain Current
5.1
A
SD
(1)
Source-drain Current (pulsed)
20
A
I
SDM
(2)
I
I
= 5.1 A, V = 0
Forward On Voltage
1.6
V
ns
µC
A
V
SD
SD
GS
SD
t
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
TBD
TBD
TBD
rr
= 5.8 A, di/dt = 100A/µs,
= 100V, T = 150°C
Q
V
rr
RRM
DD
j
(see test circuit, Figure 5)
I
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
T=25°C Note(3)
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
BV
25
V
GSO
-4
αT
Voltage Thermal Coefficient
Dynamic Resistance
1.3
90
10 /°C
I
= 20 mA, V = 0
GS
Ω
D
Rz
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V = α T (25°-T) BV
(25°)
GSO
BV
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/8
STP6NC80Z/FP/STP6NC80Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
4/8
STP6NC80Z/FP/STP6NC80Z-1
TO-220 MECHANICAL DATA
mm
inch
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
TYP.
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
5/8
STP6NC80Z/FP/STP6NC80Z-1
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
4.4
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L2
L4
6/8
STP6NC80Z/FP/STP6NC80Z-1
2
TO-262 (I PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
7/8
STP6NC80Z/FP/STP6NC80Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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8/8
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