STP6NC90Z [STMICROELECTRONICS]
N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET; N沟道900V - 1.55ohm - 5.4A TO- 220 / FP / DPAK / IPAK齐纳保护PowerMESH⑩III MOSFET
| 型号： | STP6NC90Z |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 900V - 1.55ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESH⑩III MOSFET |
| 文件： | 总13页 (文件大小：533K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP6NC90Z - STP6NC90ZFP
STB6NC90Z - STB6NC90Z-1
N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
V
DSS
R
I
D
DS(on)
STP6NC90Z
STP6NC90ZFP
STB6NC90Z
STB6NC90Z-1
900 V
900 V
900 V
900 V
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
< 1.9 Ω
5.4 A
5.4 A
5.4 A
5.4 A
3
1
3
D²PAK
2
■
■
TYPICAL R (on) = 1.55Ω
DS
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
1
TO-220
TO-220FP
■
■
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
3
2
1
I²PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
■
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
WELDING EQUIPMENT
■
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP(B)6NC90Z(-1) STP6NC90ZFP
V
Drain-source Voltage (V = 0)
900
900
± 25
V
V
DS
GS
V
Drain-gate Voltage (R = 20 kΩ)
DGR
GS
V
GS
Gate- source Voltage
V
I
Drain Current (continuos) at T = 25°C
5.4
3.43
21
5.4(*)
3.43(*)
21
A
D
C
I
Drain Current (continuos) at T = 100°C
A
D
C
I
(1)
Drain Current (pulsed)
A
DM
P
Total Dissipation at T = 25°C
135
1.08
40
W
TOT
C
Derating Factor
0.32
W/°C
mA
KV
V/ns
V
I
Gate-source Current
±50
3
GS
V
Gate source ESD(HBM-C=100pF, R=15KΩ)
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
ESD(G-S)
dv/dt
3
V
--
2000
ISO
T
–65 to 150
150
°C
°C
stg
T
Max. Operating Junction Temperature
j
(•)Pulse width limited by safe operating area
(1)I ≤5.4A, di/dt ≤100A/µs, V ≤ V
, T ≤ T
j JMAX
SD
DD
(BR)DSS
July 2002
(2) Limited only by maximum temperature allowed
.
1/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
THERMAL DATA
TO-220 / D²PAK /
TO-220FP
I²PAK
Rthj-case
Thermal Resistance Junction-case Max
0.93
3.13
°C/W
°C/W
°C
Rthj-amb
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
30
T
300
l
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
Avalanche Current, Repetitive or Not-Repetitive
5.4
A
AR
(pulse width limited by T max)
j
E
AS
Single Pulse Avalanche Energy
356
mJ
(starting T = 25 °C, I = I , V = 50 V)
j
D
AR
DD
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Test Conditions
= 250 µA, V = 0
Min.
Typ.
Max.
Unit
V
I
I
900
V
(BR)DSS
D
GS
∆BV
/∆T Breakdown Voltage Temp.
= 1 mA, V = 0
1
V/°C
DSS
J
D
GS
Coefficient
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
µA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125 °C
50
DS
GS
C
I
Gate-body Leakage
= ±20V
±10
GSS
Current (V = 0)
DS
ON (1)
Symbol
Parameter
Test Conditions
Min.
Typ.
4
Max.
5
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
3
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 3 A
1.55
1.9
Ω
DS(on)
GS
D
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
DS
> I
D(on)
x R
DS(on)max,
5.7
S
I
D
= 3A
C
C
V = 25V, f = 1 MHz, V = 0
DS GS
Input Capacitance
Output Capacitance
2290
150
15
pF
pF
pF
iss
oss
C
rss
Reverse Transfer
Capacitance
2/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
V
R
= 450 V, I = 3 A
Turn-on Delay Time
24
ns
d(on)
DD
D
= 4.7Ω V = 10V
G
GS
t
Rise Time
8
ns
r
(see test circuit, Figure 3)
Q
Q
V
V
= 720V, I = 6A,
= 10V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
42
13
15
58.8
nC
nC
nC
g
DD
D
GS
gs
gd
Q
SWITCHING OFF
Symbol
Parameter
Off-voltage Rise Time
Fall Time
Test Conditions
Min.
Typ.
10
Max.
Unit
ns
t
V
R
= 720V, I = 6 A,
r(Voff)
DD
D
= 4.7Ω, V = 10V
G
GS
t
11
ns
f
(see test circuit, Figure 5)
t
Cross-over Time
14
ns
c
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
5.4
Unit
A
I
Source-drain Current
SD
I
(2)
(1)
Source-drain Current (pulsed)
Forward On Voltage
21.6
1.6
A
SDM
V
I
I
= 6 A, V = 0
V
SD
SD
GS
t
rr
= 6 A, di/dt = 100A/µs,
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
680
7.14
21
ns
µC
A
SD
V
= 40 V, T = 150°C
j
DD
Q
rr
RRM
(see test circuit, Figure 5)
I
GATE-SOURCE ZENER DIODE
Symbol
BV
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
25
V
GSO
-4
αT
Rz
Voltage Thermal Coefficient
Dynamic Resistance
T=25°C Note(3)
1.3
90
10 /°C
I
D
= 50 mA, V = 0
GS
Ω
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. ∆V = αT (25°-T) BV
(25°)
GSO
BV
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Safe Operating Area For TO-220/D²PAK/I²PAK
Safe Operating Area For TO-220FP
Thermal Impedance For TO-220/D²PAK/I²PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
4/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Static Drain-source On Resistance
Transconductance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Source-drain Diode Forward Characteristics
6/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
8/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
TO-220FP MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.5
1.5
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L5
L6
L7
Ø
16
0.630
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
1.126
0.385
0.114
0.626
0.354
0.118
1.204
0.417
0.141
0.645
0.366
0.126
16.4
9.3
3
3.2
L3
L6
L7
1 2 3
L4
L5
L2
9/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
10/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
D2PAK MECHANICAL DATA
mm.
TYP
inch
TYP.
DIM.
MIN.
4.4
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
8º
3
11/13
1
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
0.059
12.8
20.2
24.4
100
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
12/13
STP6NC90Z/STP6NC90ZFP/STB6NC90Z/STB6NC90Z-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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© http://www.st.com
13/13
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