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STP6NK70Z [STMICROELECTRONICS]

N-CHANNEL 700V - 1.5ohm - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET; N沟道700V - 1.5ohm - 5A TO- 220 / TO- 220FP齐纳保护超网MOSFET
STP6NK70Z
型号： STP6NK70Z
厂家： ST    ST
描述：

N-CHANNEL 700V - 1.5ohm - 5A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET
N沟道700V - 1.5ohm - 5A TO- 220 / TO- 220FP齐纳保护超网MOSFET

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STP6NK70Z  
STF6NK70Z  
N-CHANNEL 700V - 1.5Ω - 5A TO-220/TO-220FP  
Zener-Protected SuperMESH™MOSFET  
Table 1: General Features  
Figure 1: Package  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP6NK70Z  
STF6NK70Z  
700 V < 1.8 Ω  
700 V < 1.8 Ω  
5 A  
5 A (*)  
110 W  
30 W  
■ TYPICAL R (on) = 1.5 Ω  
DS  
■ EXTREMELY HIGH dv/dt CAPABILITY  
■ IMPROVED ESD CAPABILITY  
■ 100% AVALANCHE RATED  
3
3
2
1
2
1
■ GATE CHARGE MINIMIZED  
■ VERY LOW INTRINSIC CAPACITANCES  
■ VERY GOOD MANUFACTURING  
REPEATIBILITY  
TO-220  
TO-220FP  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
stripbased PowerMESH™ layout. In addition to  
pushing on-resistance significantly down, special  
care is taken to ensure a very good dv/dt capability  
for the most demanding applications. Such series  
complements ST full range of high voltage MOS-  
FETs including revolutionary MDmesh™ products.  
Figure 2: Internal Schematic Diagram  
APPLICATIONS  
■ HIGH CURRENT, HIGH SPEED SWITCHING  
■ IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
Table 2: Order Codes  
SALES TYPE  
STP6NK70Z  
STF6NK70Z  
MARKING  
P6NK70Z  
F6NK70Z  
PACKAGE  
TO-220  
PACKAGING  
TUBE  
TO-220FP  
TUBE  
Rev. 3  
September 2005  
1/12  
STP6NK70Z - STF6NK70Z  
Table 3: Absolute Maximum ratings  
Symbol  
Parameter  
Value  
Unit  
STP6NK70Z  
STF6NK70Z  
V
Drain-source Voltage (V = 0)  
700  
700  
± 30  
V
V
DS  
GS  
V
DGR  
Drain-gate Voltage (R = 20 kΩ)  
GS  
V
Gate- source Voltage  
V
GS  
I
Drain Current (continuous) at T = 25°C  
5
5 (*)  
3.15 (*)  
20 (*)  
30  
A
D
C
I
D
Drain Current (continuous) at T = 100°C  
3.15  
20  
A
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
110  
0.87  
W
TOT  
C
Derating Factor  
0.24  
W/°C  
V
V
Gate source ESD(HBM-C=100pF, R=1.5KΩ)  
Peak Diode Recovery voltage slope  
Insulation Withstand Voltage (DC)  
4000  
4.5  
ESD(G-S)  
dv/dt (1)  
V/ns  
V
V
ISO  
-
2500  
T
T
stg  
Operating Junction Temperature  
Storage Temperature  
-55 to 150  
-55 to 150  
°C  
°C  
j
( ) Pulse width limited by safe operating area  
(1) I ≤5A, di/dt ≤100A/µs, V ≤ V , T ≤ T  
JMAX.  
SD  
DD  
(BR)DSS  
j
(*) Limited only by maximum temperature allowed  
Table 4: Thermal Data  
TO-220  
1.14  
TO-220FP  
Rthj-case  
Rthj-amb  
Thermal Resistance Junction-case Max  
4.2  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-ambient Max  
Maximum Lead Temperature For Soldering Purpose  
62.5  
300  
T
l
Table 5: Avalanche Characteristics  
Symbol  
Parameter  
Max Value  
Unit  
I
AR  
Avalanche Current, Repetitive or Not-Repetitive  
5
A
(pulse width limited by T max)  
j
E
AS  
Single Pulse Avalanche Energy  
200  
mJ  
(starting T = 25 °C, I = I , V = 50 V)  
j
D
AR  
DD  
Table 6: Gate-Source Zener Diode  
Symbol  
BV  
Parameter  
Test Conditions  
Igs=± 1mA (Open Drain)  
Min.  
30  
Typ.  
Max.  
Unit  
Gate-Source Breakdown  
Voltage  
V
GSO  
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES  
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s  
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be  
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and  
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the  
usage of external components.  
2/12  
STP6NK70Z - STF6NK70Z  
ELECTRICAL CHARACTERISTICS (T  
=25°C UNLESS OTHERWISE SPECIFIED)  
CASE  
Table 7: On /Off  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
V
Drain-source Breakdown  
Voltage  
I
D
= 1 mA, V = 0  
700  
V
(BR)DSS  
GS  
I
Zero Gate Voltage  
V
V
= Max Rating  
= Max Rating, T = 125°C  
1
50  
µA  
µA  
DSS  
DS  
Drain Current (V = 0)  
GS  
DS  
C
I
Gate-body Leakage  
V
GS  
= ± 20 V  
± 10  
µA  
GSS  
Current (V = 0)  
DS  
V
V
V
= V , I = 100 µA  
3
4.5  
1.8  
V
Gate Threshold Voltage  
3.75  
1.5  
GS(th)  
DS  
GS  
D
R
Static Drain-source On  
Resistance  
= 10 V, I = 2.5 A  
Ω
DS(on  
GS  
D
Table 8: Dynamic  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
g
(1)  
Forward Transconductance  
V
= 15 V , I = 2.5 A  
4.4  
S
fs  
DS  
DS  
D
C
C
C
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
V
= 25 V, f = 1 MHz, V = 0  
930  
105  
22  
pF  
pF  
pF  
iss  
GS  
oss  
rss  
C
(3) Equivalent Output  
V
V
= 0 V, V = 0 to 560 V  
70  
pF  
OSS eq  
.
GS  
DS  
Capacitance  
t
t
Turn-on Delay Time  
Rise Time  
Turn-off-Delay Time  
= 350 V, I = 2.5 A,  
17  
18  
45  
30  
ns  
ns  
ns  
ns  
d(on)  
DD  
D
t
r
R = 4.7 Ω, V = 10 V  
G GS  
(see Figure 17)  
d(off)  
Fall Time  
t
f
Q
V
V
= 560 V, I = 5 A,  
= 10 V  
34  
6.5  
17  
47  
nC  
nC  
nC  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
g
DD  
D
Q
gs  
gd  
GS  
Q
(see Figure 20)  
Table 9: Source Drain Diode  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
I
5
20  
A
A
Source-drain Current  
Source-drain Current (pulsed)  
SD  
(2)  
I
SDM  
V
(1)  
I
I
= 5 A, V = 0  
Forward On Voltage  
1.6  
V
SD  
SD  
GS  
t
rr  
= 5 A, di/dt = 100 A/µs  
= 35V  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
432  
2.37  
11  
ns  
µC  
A
SD  
Q
V
DD  
(see Figure 18)  
rr  
I
RRM  
t
Q
I
V
= 5 A, di/dt = 100 A/µs  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
588  
3.38  
11.5  
ns  
µC  
A
rr  
SD  
= 35V, T = 150°C  
rr  
DD  
j
I
(see Figure 18)  
RRM  
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.  
(2) Pulse width limited by safe operating area.  
(3) C  
is defined as a constant equivalent capacitance giving the same charging time as C when V increases from 0 to 80% V  
.
DSS  
oss eq.  
oss  
DS  
3/12  
STP6NK70Z - STF6NK70Z  
Figure 3: Safe Operating Area  
Figure 6: Thermal Impedance  
Figure 4: Safe Operating Area for TO-220FP  
Figure 7: Thermal Impedance for TO-220FP  
Figure 5: Output Characteristics  
Figure 8: Transfer Characteristics  
4/12  
STP6NK70Z - STF6NK70Z  
Figure 9: Transconductance  
Figure 12: Static Drain-source On Resistance  
Figure 10: Gate Charge vs Gate-source Voltage  
Figure 13: Capacitance Variations  
Figure 11: Source-Drain Diode Forward Char-  
acteristics  
Figure 14: Normalizzed BVdss vs Temperature  
5/12  
STP6NK70Z - STF6NK70Z  
Figure 15: Avalanche Energy vs Starting Tj  
6/12  
STP6NK70Z - STF6NK70Z  
Figure 16: Unclamped Inductive Load Test Cir-  
cuit  
Figure 19: Unclamped Inductive Wafeform  
Figure 17: Switching Times Test Circuit For  
Resistive Load  
Figure 20: Gate Charge Test Circuit  
Figure 18: Test Circuit For Inductive Load  
Switching and Diode Recovery Times  
7/12  
STP6NK70Z - STF6NK70Z  
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These  
packages have a Lead-free second level interconnect . The category of second level interconnect is  
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The  
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an  
ST trademark. ECOPACK specifications are available at: www.st.com  
8/12  
STP6NK70Z - STF6NK70Z  
TO-220FP MECHANICAL DATA  
mm.  
inch  
DIM.  
MIN.  
4.4  
TYP  
MAX.  
4.6  
2.7  
2.75  
0.7  
1
MIN.  
0.173  
0.098  
0.098  
0.017  
0.030  
0.045  
0.045  
0.195  
0.094  
0.393  
TYP.  
MAX.  
0.181  
0.106  
0.108  
0.027  
0.039  
0.067  
0.067  
0.204  
0.106  
0.409  
A
B
2.5  
D
2.5  
E
0.45  
0.75  
1.15  
1.15  
4.95  
2.4  
F
F1  
F2  
G
1.7  
1.7  
5.2  
2.7  
10.4  
G1  
H
10  
L2  
L3  
L4  
L5  
L6  
L7  
Ø
16  
0.630  
28.6  
9.8  
2.9  
15.9  
9
30.6  
10.6  
3.6  
1.126  
.0385  
0.114  
0.626  
0.354  
0.118  
1.204  
0.417  
0.141  
0.645  
0.366  
0.126  
16.4  
9.3  
3
3.2  
L3  
L6  
L7  
1 2  
L4  
3
L5  
L2  
9/12  
STP6NK70Z - STF6NK70Z  
TO-220 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
TYP  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
4.40  
0.61  
1.15  
0.49  
15.25  
10  
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.094  
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
10/12  
STP6NK70Z - STF6NK70Z  
Table 10: Revision History  
Date  
Revision  
Description of Changes  
24-Sep-2004  
04-Nov-2004  
06-Sep-2005  
1
2
3
First release.  
Complete version  
Inserted Ecopack indication  
11/12  
STP6NK70Z - STF6NK70Z  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
All other names are the property of their respective owners  
© 2005 STMicroelectronics - All Rights Reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
12/12  

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