SSM6P05U [ETC]
TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 200MA I(D) | TSOP ; 晶体管| MOSFET |匹配对| P沟道| 20V V（ BR ） DSS | 200MA I（ D） | TSOP\n
| 型号： | SSM6P05U |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | MATCHED PAIR | P-CHANNEL | 20V V(BR)DSS | 200MA I(D) | TSOP
|
| 文件： | 总4页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM6P05FU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
S S M 6 P 0 5 F U
Power Management Switch
High Speed Switching Applications
•
•
Small package
Low on resistance : R = 3.3 Ω (max) (@V
on
Low gate threshold voltage
= −4 V)
on
GS
GS
: R = 4.0 Ω (max) (@V
= −2.5 V)
•
Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristics
Drain-Source voltage
Symbol
Rating
Unit
V
−20
12
V
V
DS
Gate-Source voltage
V
GSS
DC
I
−200
−400
300
D
Drain current
mA
Pulse
I
DP
Drain power dissipation (Ta = 25°C)
Channel temperature
P
(Note1)
mW
°C
D
T
150
ch
Storage temperature range
T
−55~150
°C
stg
Note1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
000707EAA1
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
• The information contained herein is subject to change without notice.
2000-07-19 1/4
SSM6P05FU
Marking
Equivalent Circuit (top view)
6
5
4
3
6
5
4
Q1
D H
Q2
1
2
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate leakage current
Symbol
Test Condition
12 V, V = 0
Min
Typ.
Max
Unit
I
V
=
−20
2.1
3.2
27
7
1
µA
V
GSS
GS
DS
Drain-Source breakdown voltage
Drain cut-off current
V
I
= −1 mA, V
= 0
GS
(BR) DSS
D
I
V
V
V
= −20 V, V = 0
GS
−1
µA
V
DSS
DS
DS
DS
Gate threshold voltage
V
= −3 V, I = −0.1 mA
−0.6
−1.1
th
D
Forward transfer admittance
Y
fs
= −3 V, I = −50 mA (Note2) 100
mS
D
I
I
= −100 mA, V
= −4 V (Note2)
GS
3.3
4.0
D
D
Drain-Source ON resistance
R
Ω
DS (ON)
= −50 mA, V
= −2.5 V (Note2)
GS
Input capacitance
C
C
pF
pF
pF
iss
V
= −3 V, V
= 0, f = 1 MHz
GS
Reverse transfer capacitance
Output capacitance
DS
rss
oss
on
C
t
21
70
70
Turn-on time
Turn-off time
V
V
= −3 V, I = −50 mA,
DD
GS
D
Switching time
ns
= 0~−2.5 V
t
off
Note2: Pulse test
Switching Time Test Circuit (Q1, Q2 common)
(a) Test circuit
(b) V
IN
0 V
OUT
10%
0
IN
90%
−2.5 V
R
L
−2.5 V
10 µs
= −3 V
V
DD
(c) V
V
OUT
DS (ON)
90%
V
DD
<
Duty 1%
=
10%
V
: t , t < 5 ns
r f
V
IN
DD
t
t
f
r
(Z = 50 Ω)
out
Common Source
Ta = 25°C
t
t
off
on
Precaution
V
can be expressed as voltage between gate and source when low operating current value is I = −100 µA for
D
th
this product. For normal switching operation, V
requires higher voltage than V and V
th GS (off)
requires
GS (on)
lower voltage than V . (Relationship can be established as follows: V
< V < V )
GS (on)
th
GS (off)
th
Please take this into consideration for using the device. V
recommended voltage of −2.5 V or higher to turn on
GS
this product.
2000-07-19 2/4
SSM6P05FU
(Q1, Q2 common)
I
– V
I – V
D GS
D
DS
−500
−400
−300
−200
−100
−1000
−100
−10
Common
Source
Common Source
V
DS
= −3 V
Ta = 25°C
−10
−4
−3
−2.5
−2.3
−2.1
−1.9
Ta = 100°C
25°C
−1
−25°C
−1.7
−0.1
−0.01
V
= −1.5 V
GS
0
0
−0.5
−1.0
−1.5
(V)
−2.0
0
−0.5
−1.0
−1.5
−2.0
−2.5
(V)
−3.0
Drain-Source voltage
V
Gate-Source voltage
V
GS
DS
R
– I
R
– V
DS (ON)
D
DS (ON) GS
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Common Source
Common Source
Ta = 25°C
I
= −50 mA
D
−2.5 V
= −4 V
Ta = 100°C
25°C
V
GS
−25°C
0
−100
−200
Drain current
−300
−400
−500
0
−2
−4
−6
−8
−10
I
D
(mA)
Gate-Source voltage
V
(V)
GS
R
– Ta
DS (ON)
6
5
4
3
2
1
Common Source
Y – I
fs
D
1000
Common Source
= −3 V
V
DS
Ta = 25°C
500
300
−2.5 V, −50 mA
V
= −4 V, I = −100 mA
D
GS
100
50
30
0
−25
0
25
50
75
100
125
150
−10
−30 −50
−100
−300 −500
(mA)
−1000
Ambient temperature Ta (°C)
Drain current
I
D
2000-07-19 3/4
SSM6P05FU
(Q1, Q2 common)
I
– V
C – V
DS
DR
DS
−500
100
Common Source
V
= 0
GS
50
30
Ta = 25°C
−400
−300
−200
−100
0
C
iss
D
C
oss
G
I
DR
10
S
5
3
C
rss
Common Source
= 0
V
GS
f = 1 MHz
Ta = 25°C
1
−0.1
−0.3
−1
−3
−10
−30
Drain-Source voltage
V
(V)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
DS
Drain-Source voltage
V
(V)
DS
t – I
P * – Ta
D
D
1000
400
300
200
100
0
Common Source
Mounted on FR4 board.
V
V
= −3 V
(25.4 mm × 25.4 mm × 1.6 t
DD
500
300
2
= 0~−2.5 V
Cu Pad: 0.32 mm × 6)
t
t
GS
off
Ta = 25°C
t
f
100
on
50
30
t
r
10
−1
−3
−10
Drain current
−30
−100
−300
I
D
(mA)
0
20
40
60
80
100
120
140
160
Ambient temperature Ta (°C)
*: Total rating
2000-07-19 4/4
相关型号：
SSM6P15FE(TE85L)
TRANSISTOR,MOSFET,MATCHED PAIR,P-CHANNEL,30V V(BR)DSS,100MA I(D),SOT-363VAR
TOSHIBA
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