MSK3002 [ETC]
H-BRIDGE MOSFET POWER MODULE; H桥MOSFET功率模块
| 型号： | MSK3002 |
| 厂家： | 
ETC |
| 描述： | H-BRIDGE MOSFET POWER MODULE |
| 文件： | 总6页 (文件大小：360K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISO 9001 CERTIFIED BY DSCC
H-BRIDGE
MOSFET POWER MODULE
3002
M.S. KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
FEATURES:
• Pin Compatible with MPM3002 and MPM3010
• P and N Channel MOSFETs for Ease of Drive
• N Channel Current Sensing MOSFET for Low Loss Sensing
• Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
• Avalanche Rated Devices
• 55 Volt, 10 Amp Full H-Bridge
DESCRIPTION:
The MSK 3002 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3002 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The N Channel MOSFETS are current sensing to allow for low loss current sensing for current controlled
applications. The MSK 3002 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3002 is pin
compatible with the MPM3002 and MPM3010 with some differences in specifications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
• Stepper Motor Servo Control
• Disk Drive Head Control
• X-Y Table Control
• Az-El Antenna Control
Rev. C 7/00
1
ABSOLUTE MAXIMUM RATINGS
Single Pulse Avalanche Energy
(Q1,Q4)
(Q2,Q3)
VDSS
Drain to Source Voltage
VDGDR Drain to Gate Voltage
(RGS = 1 MΩ)
55V MAX
55V MAX
6.0J
71 mJ
+175°CMAX
-55°C to +150°C
-55°C to +125°C
TJ
JunctionTemperature
VGS
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
TST Storage Temperature
TC Case Operating Temperature Range
TLD Lead Temperature Range
(10Seconds)
±20V MAX
10A MAX
25A MAX
ID
IDM
300°C MAX
RTH-JC Thermal Resistance
(Junction to Case)
IM
7.9°C/W
13 mA MAX
33 mA MAX
Sense Current - Continuou
Sense Current Peak
IMM
ELECTRICAL SPECIFICATIONS
MSK 3002
Typ.
Parameter
Test Conditions 4
Units
Max.
Min.
55
55
-
-
-
25
Drain-Source Breakdown Voltage
Drain-Mirror Breakdown Voltage
V
V
µA
µA
nA
V
V
Ω
Ω
Ω
VGS = 0
ID = 0.25 mA (All Transistors)
-
-
-
-
-
-
-
-
-
-
-
-
-
VGS = 0
VDS = 55V, (Q2, Q3)
VDS = 55V VGS = 0V, (Q2, Q3)
VDS = -55V VGS = 0V, (Q1, Q4)
Drain-Source Leakage Current
Gate-Source Leakage Current
-25
±100
4.5
-4.5
0.20
0.28
0.10
0.175
-
-
VGS = ±20V
VDS = 0V (All Transistors)
VDS = VGS ID = 250 µA (Q2, Q3)
VDS = VGS ID = 250 µA (Q1, Q4)
VGS = 10V ID = 10A (Q2, Q3)
VGS = -10V ID = -7.2A (Q1, Q4)
VGS = 10V ID = 10A (Q2, Q3)
VGS = -10V ID = -7.2A (Q1, Q4)
VDS = 25V ID = 10A (Q2, Q3)
VDS = -25V ID = -7.2A (Q1, Q4)
-
2.0
-2.0
-
Gate-Source Threshold Voltage
Drain-Source on Resistance
Drain-Source on Resistance
2
-
-
3
1
Ω
S
S
-
5.8
2.5
Forward Transconductance
-
N-CHANNEL (Q2, Q3)
ID = 17A
VDS = 48V
VGS = 10V
VDD = 30V
ID = 17A
RG = 18Ω
RD = 1.7Ω
VGS = 0V
-
24
6.3
9
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
pF
r
Total Gate Charge
Gate-Source Charge 1
Gate-Drain Charge
Turn-On Delay Time 1
Rise Time
1
-
-
-
-
-
1
-
12
59
25
38
720
360
75
14
-
-
1
-
Turn-Off Delay Time 1
-
Fall Time
1
1
Input Capacitance
-
Output Capacitance 1
-
-
VDS = 25V
f = 1 MHz
ID = 17A
-
-
Reverse Transfer Capacitance 1
Output Capacitance of Sensing Cells 1
Current Sensing Ratio 1
-
-
740
820
P-CHANNEL (Q1, Q4)
ID = -7.2A
VDS = -44V
-
-
-
-
-
-
-
-
-
-
-
-
-
19
5.1
10
-
-
-
-
-
-
-
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
Total Gate Charge
Gate-Source Charge 1
Gate-Drain Charge
Turn-On Delay Time 1
Rise Time
1
1
VGS = -10V
VDD = -28V
13
55
23
37
350
170
92
1
ID = -7.2A
RG = 24Ω
Turn-Off Delay Time 1
Fall Time
1
1
RD = 3.7Ω
VGS = 0V
Input Capacitance
Output Capacitance 1
Reverse Transfer Capacitance 1
BODY DIODE
VDS = -25V
f = 1 MHz
-
-
1.5
-1.6
87
V
V
nS
-
-
-
-
IS = 17A VGS = 0V (Q2, Q3)
IS = -7.2A VGS = 0V (Q1, Q4)
IS = 17A di/dt = 100A/µS (Q2, Q3)
IS = -7.2A di/dt = 100A/µS (Q1, Q4)
Forward on Voltage
1
180
71
Reverse Recovery Time
1
nS
47
-
-
µC
µC
0.29
0.084
0.60
0.13
IS = 17A di/dt = 100A/µS (Q2, Q3)
IS = -7.2A di/dt = 100A/µS (Q1, Q4)
Reverse Recovery Charge
1
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but
are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA = 25°C unless otherwise specified.
Rev. C 7/00
2
APPLICATION NOTES
N-CHANNEL GATES (Q2, Q3):
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient
voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors
are on. This will keep the dissipation down to a minimum level. How quickly the gate gets turned ON and OFF will
determine the dissipation of the transistor while it is transitioning from OFF to ON and vice-versa. Turning the gate ON and
OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in
the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive
IC's have sufficient gate drive capability for the MSK 3002. If not, paralleled CMOS standard gates will usually be
sufficient. A series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray iductances
in the MOSFET circuit. The selection of the resistor is determined by how fast the MOSFET wants to be switched. See
Figure 1 for circuit details.
FIGURE 1
P-CHANNEL GATES (Q1, Q4):
Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel
gate to source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for
directly interfacing with the P-Channel gates. If not, an external common emitter switching transistor configuration (see
Figure 2) will turn the P-Channel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply
voltages, additional circuitry must be used to protect the P-Channel gate from excessive voltages.
FIGURE 2
BRIDGE DRIVE CONSIDERATIONS:
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high
side transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called
"shoot-through" and it places a momentary short across the power supply. This overly stresses the transistors and causes
excessive noise as well. See Figure 3.
FIGURE 3
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with
gate resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are
used for servo systems such as locked antiphase PWM'ing for high bandwidth operation.
Rev. C 7/00
3
APPLICATION NOTES, CONT.
USING CURRENT SENSING MOSFETS:
A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They share the current total
very evenly. If one of these cells are brought out to a pin, that cell will pass an accurate proportional amount of the total
current. This current can be used as a low power sense of the whole current without passing that whole current through a
sensing device like a resistor. This small current multiplied by the ratio specified on the data sheet equals the whole current.
There are several methods of working with the sense function to obtain the actual current.
1. Virtual Earth Sensing
The disadvantage is amplifying a current swing of 10 amps in 100 nSec to produce a 5V output means the op amp has to
slew 50V/µSec. This is beyond the capabilities of a lot of op amps.
2. Resistor Sensing
The disadvantage is RT voltage must be above the offset voltage of the op amp and RT must be much less than RDS(ON) of
the sensing cell or temperature shifts will affect accuracy.
Rev. C 7/00
4
TYPICAL PERFORMANCE CURVES
5
Rev. C 7/00
MECHANICAL SPECIFICATIONS
TORQUE SPECIFICATION 3 TO 5 IN/LBS. NYLON SCREWS OR WASHERS ARE RECOMMENDED.
ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE SPECIFIED.
ORDERING INFORMATION
PART
SCREENING LEVEL
NUMBER
MSK 3002
Industrial
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
6
Rev. C 7/00
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