MSK3004 [MSK]
H-BRIDGE MOSFET POWER MODULE; H桥MOSFET功率模块
| 型号： | MSK3004 |
| 厂家： | 
M.S. KENNEDY CORPORATION |
| 描述： | H-BRIDGE MOSFET POWER MODULE |
| 文件： | 总5页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISO-9001 CERTIFIED BY DSCC
H-BRIDGE
MOSFET POWER MODULE
3004
(315) 701-6751
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
Pin Compatible with MPM3004
P and N Channel MOSFETs for Ease of Drive
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
55 Volt, 10 Amp Full H-Bridge
DESCRIPTION:
The MSK 3004 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package.
The MSK 3004 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom
transistors. The MSK 3004 uses M.S.Kennedy's proven power hybrid technology to bring a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3004 is a
replacement for the MPM3004 with only minor differences in mechanical specifications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
PIN-OUT INFORMATION
N/C
Drain 1,2
Gate 1
1
2
3
4
5
6
12 Source 4
11 N/C
Stepper Motor Servo Control
Disk Drive Head Control
X-Y Table Control
10 Drain 3,4
9 Gate 4
8 Gate 3
Source 1
Gate 2
Source 2
Az-El Antenna Control
7 Source 3
Rev. G 10/04
1
ABSOLUTE MAXIMUM RATINGS
TJ
TST
TC
Drain to Source Voltage
VDGDR Drain to Gate Voltage
+175°C MAX
-55°C to +150°C
-55°C to +125°C
JunctionTemperature
Storage Temperature
Case Operating Temperature Range
Lead Temperature Range
(10 Seconds)
55V MAX
55V MAX
VDSS
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Single Pulse Avalanche Energy
(Q1,Q4)
(Q2,Q3)
TLD
VGS
300°C MAX
20V MAX
10A MAX
25A MAX
RTH-JC
Thermal Resistance (Junction to Case)
P-Channel @ 25°C
P-Channel @ 125°C
ID
IDM
9.7°C/W
14.5°C/W
9.7°C/W
N-Channel @ 25°C
N-Channel @ 125°C
71mJ
96mJ
14.5°C/W
ELECTRICAL SPECIFICATIONS
MSK3004
Parameter
Test Conditions
4
Units
Min.
Typ.
Max.
-
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
VGS=0 ID=0.25mA (All Transistors)
VDS=55V VGS=0V (Q1,Q4)
VDS=-55V VGS=0V (Q2,Q3)
VGS= 20V VDS=0 (All Transistors)
VDS=VGS ID=250µA (Q1,Q4)
VDS=VGS ID=250µA (Q2,Q3)
VGS=10V ID=10A (Q1,Q4)
VGS=-10V ID=-7.2A (Q2,Q3)
VGS=10V ID=10A (Q1,Q4)
VGS=10V ID=-7.2A (Q2,Q3)
VDS=25V ID=10A (Q1,Q4)
VDS=-25V ID=-7.2A (Q2,Q3)
55
-
-
-
-
-
-
-
-
-
-
-
-
V
µA
µA
nA
V
-
25
-
-25
100
4.5
-4.5
0.15
0.28
0.07
0.175
-
Gate-Source Leakage Current
Gate-Source Threshold Voltage
-
2.0
-2.0
-
V
Ω
Drain-Source On Resistance
Drain-Source On Resistance
2
3
-
Ω
-
Ω
-
Ω
4.5
2.5
S
Forward Transconductance
1
-
S
N-Channel (Q1,Q4)
1
1
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
ID=10A
VDS=44V
VGS=10V
VDD=28V
ID=10A
-
-
-
-
-
-
-
-
-
-
-
-
20
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
1
5.3
-
7.6
1
4.9
34
19
27
370
140
65
-
-
-
-
-
-
-
1
Rise Time
Turn-Off Delay Time
1
RG=24Ω
RD=2.6Ω
VGS=0V
VDS=25V
f=1MHz
1
Fall Time
1
Input Capacitance
1
Output Capacitance
Reverse Transfer Capacitance
1
P-CHANNEL (Q2,Q3)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
1
ID=-7.2A
VDS=-44V
VGS=-10V
VDD=-28V
ID=-7.2A
RG=24Ω
RD=3.7Ω
VGS=0V
-
-
-
-
-
-
-
-
-
-
-
-
19
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
1
5.1
1
-
10
1
13
55
23
37
350
170
92
-
-
-
-
-
-
-
1
Rise Time
1
Turn-Off Delay Time
1
Fall Time
1
Input Capacitance
1
Output Capacitance
VDS=-25V
f=1MHz
1
Reverse Transfer Capacitance
BODY DIODE
IS=10A VGS=0V (Q1,Q4)
IS=-7.2A VGS=0V (Q2,Q3)
-
-
-
-
-
-
1.3
-1.6
56
-
V
1
Forward On Voltage
-
V
IS=10A di/dt=100A/µS (Q1,Q4)
IS=-7.2A di/dt=100A/µS (Q2,Q3)
IS=10A di/dt=100A/µS (Q1,Q4)
IS=-7.2A di/dt=100A/µS (Q2,Q3)
83
nS
nS
µC
µC
1
Reverse Recovery Time
Reverse Recovery Charge
47
71
0.12
0.084
0.18
0.13
1
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
2 Resistance as seen at package pins.
3 Resistance for die only; use for thermal calculations.
4 TA=25°C unless otherwise specified.
Rev. G 10/04
2
APPLICATION NOTES
N-CHANNEL GATES (Q1,Q4)
For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient
voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on.
This will keep the dissipation down to a minimum level [RDS(ON) specified in the data sheet]. How quickly the gate gets turned ON
and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON, and vice-versa. Turning the gate
ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise
in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's
have sufficient gate drive capability for the MSK 3004. If not, paralleled CMOS standard gates will usually be sufficient. A series
resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray inductances in the MOSFET circuit. The
selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details.
Figure 1
P-CHANNEL GATES (Q2,Q3)
Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel gate to
source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for directly interfacing
with the P-channel gates. If not, an external common emitter switching transistor configuration (see Figure 2) will turn the P-
Channel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply voltages, additional circuitry must be
used to protect the P-Channel gate from excessive voltages.
Figure 2
BRIDGE DRIVE CONSIDERATIONS
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side
transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through",
and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well.
See Figure 3.
Figure 3
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate
resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo
systems such as locked antiphase PWM'ing for high bandwidth operation.
Rev. G 10/04
3
TYPICAL PERFORMANCE CURVES
Rev. G 10/04
4
MECHANICAL SPECIFICATIONS
TORQUE SPECIFICATION 4 TO 6 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED.
ALL DIMENSIONS ARE 0.010 INCHES UNLESS OTHERWISE LABELED.
ORDERING INFORMATION
PART
SCREENING LEVEL
NUMBER
MSK 3004
Industrial
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
5
Rev. G 10/04
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