MSK3015 [MSK]
THREE PHASE BRIDGE MOSFET POWER MODULE; 三相桥式MOSFET功率模块
| 型号： | MSK3015 |
| 厂家： | 
M.S. KENNEDY CORPORATION |
| 描述： | THREE PHASE BRIDGE MOSFET POWER MODULE |
| 文件： | 总5页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISO-9001 CERTIFIED BY DSCC
THREE PHASE BRIDGE
MOSFET POWER MODULE
3015
M.S.KENNEDY CORP.
4707 Dey Road Liverpool, N.Y. 13088
(315) 701-6751
FEATURES:
All N-Channel Mosfets
Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
Avalanche Rated Devices
Interfaces with Most Brushless Motor Drive IC's
100 Volt, 23 Amp Full Three Phase Bridge at 25°C
DESCRIPTION:
The MSK 3015 is an all N-Channel three phase power MOSFET Bridge Circuit. Packaged in a space efficient isolated
ceramic tab power SIP that allows for direct heat sinking, the MSK 3015 can be interfaced with a wide array of brushless
motor drive IC's. The MSK 3015 uses M.S Kennedy's proven power hybrid technology to produce a cost effective high
performance circuit for use in today's sophisticated servo motor and disk drive systems.
EQUIVALENT SCHEMATIC
PIN-OUT INFORMATION
TYPICAL APPLICATIONS
Three Phase Brushless DC Motor Servo Control
Disk Drive Spindle Control
Fin Actuator Control
1 Drain Q2, Q4, Q6
12 Drain Q3,Source Q4
13 Drain Q3, Source Q4
14 Source Q1, Q3, Q5
15 Source Q1, Q3, Q5
16 Source Q1, Q3, Q5
17 Gate Q6
18 Drain Q5, Source Q6
19 Drain Q5, Source Q6
20 Drain Q5, Source Q6
21 Gate Q5
2 Drain Q2, Q4, Q6
3 Drain Q2, Q4, Q6
4 Gate Q2
Az-El Antenna Control
5 Gate Q1
6 Drain Q1, Source Q2
7 Drain Q1, Source Q2
8 Drain Q1, Source Q2
9 Gate Q4
10 Gate Q3
11 Drain Q3, Source Q4
1
Rev. - 8/01
ABSOLUTE MAXIMUM RATINGS
VDSS
VDGDR
Drain to Source Voltage
Drain to Gate Voltage
(RGS=1MΩ)
Gate to Source Voltage
(Continuous)
Continuous Current
Pulsed Current
Thermal Resistance
(Junction to Case)@25°C
Thermal Resistance
(Junction to Case)@125°C
Single Pulse Avalanche Energy
TJ Junction Temperature
TST Storage Temperature
TC Case Operating Temperature Range
TLD Lead Temperature Range
(10 Seconds)
100V MAX
100V MAX
830 mJ
+150°C MAX
-55°C to +150°C
-55°C to +125°C
VGS
±20V MAX
23A MAX
41A MAX
ID
IDM
RTH-JC
300°C MAX
1.2°C/W
2.0°C/W
RTH-JC
ELECTRICAL SPECIFICATIONS
MSK3015
Parameter
4
Test Conditions
Units
Min.
Max.
Typ.
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Threshold Voltage
100
-
V
µA
nA
V
-
VGS=0 ID=0.25mA
-
250
-
VDS=100V VGS=0V
VGS=±20V VDS=0
VDS=VGS ID=250µA
VGS=10V ID = 23A
VGS=10V ID=23A
VDS=25V ID=23A
ID = 23A
-
±100
-
2.0
4.0
-
Drain-Source On Resistance
Drain-Source On Resistance
Forward Transconductance
2
3
-
-
0.09
Ω
-
0.06
Ω
-
-
1
13
-
-
S
1
Total Gate Charge
140
nC
nC
nC
nS
nS
nS
nS
pF
pF
pF
-
Gate-Source Charge 1
-
29
-
VDS=80V
1
Gate-Drain Charge
Turn-On Delay Time
-
68
-
VGS = 10V
1
-
-
-
-
-
-
-
-
16
120
60
81
2800
1100
280
VDD=50V
1
Rise Time
-
ID = 23A
1
Turn-Off Delay Time
-
RG = 6.2Ω
1
Fall Time
-
RD = 1.2Ω
1
Input Capacitance
Output Capacitance
-
VGS=0V
1
-
VDS=25V
Reverse Transfer Capacitance
Body Diode
1
-
f=1MHz
Forward On Voltage
1
-
-
-
-
V
2.5
220
1.9
IS=23 A VGS=0V
Reverse Recovery Time
1
330
2.9
nS
µC
IS=23 A di/dt=100A/µS
1
Reverse Recovery Charge
NOTES:
1
2
3
4
This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only.
Resistance as seen at package pins.
Resistance for die only; use for thermal calculations.
TA=25°C unless otherwise specified.
2
Rev. - 8/01
APPLICATION NOTES
BRIDGE DRIVE CONSIDERATIONS
It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side
transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through",
and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well.
See Figure 1.
Figure 1
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate
resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are used for servo
systems such as locked antiphase PWM'ing for high bandwidth operation.
3
Rev. - 8/01
TYPICAL PERFORMANCE CURVES
Rev. - 8/01
4
MECHANICAL SPECIFICATIONS
ALL DIMENSIONS ARE ±0.010 INCHES UNLESS OTHERWISE LABELED.
ORDERING INFORMATION
Part
Number
Screening Level
Industrial
MSK 3015
M.S. Kennedy Corp.
4707 Dey Road, Liverpool, New York 13088
Phone (315) 701-6751
FAX (315) 701-6752
www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make
changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
Please visit our website for the most recent revision of this datasheet.
Rev. - 8/01
5
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